DE68922212D1 - Halbleiteranordnung, die eine integrierte schaltung mit einem vertikalen transistor enthält. - Google Patents

Halbleiteranordnung, die eine integrierte schaltung mit einem vertikalen transistor enthält.

Info

Publication number
DE68922212D1
DE68922212D1 DE68922212T DE68922212T DE68922212D1 DE 68922212 D1 DE68922212 D1 DE 68922212D1 DE 68922212 T DE68922212 T DE 68922212T DE 68922212 T DE68922212 T DE 68922212T DE 68922212 D1 DE68922212 D1 DE 68922212D1
Authority
DE
Germany
Prior art keywords
integrated circuit
vertical transistor
semiconductor arrangement
arrangement containing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68922212T
Other languages
English (en)
Other versions
DE68922212T2 (de
Inventor
Pierre Leduc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE68922212D1 publication Critical patent/DE68922212D1/de
Publication of DE68922212T2 publication Critical patent/DE68922212T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE68922212T 1988-12-16 1989-12-18 Halbleiteranordnung, die eine integrierte schaltung mit einem vertikalen transistor enthält. Expired - Fee Related DE68922212T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8816640A FR2640813A1 (fr) 1988-12-16 1988-12-16 Circuit integre presentant un transistor vertical
PCT/NL1989/000097 WO1990007193A1 (en) 1988-12-16 1989-12-18 Semiconductor device comprising an integrated circuit having a vertical transistor

Publications (2)

Publication Number Publication Date
DE68922212D1 true DE68922212D1 (de) 1995-05-18
DE68922212T2 DE68922212T2 (de) 1995-11-09

Family

ID=9373048

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68922212T Expired - Fee Related DE68922212T2 (de) 1988-12-16 1989-12-18 Halbleiteranordnung, die eine integrierte schaltung mit einem vertikalen transistor enthält.

Country Status (6)

Country Link
US (1) US5250838A (de)
EP (1) EP0401354B1 (de)
JP (1) JPH03502987A (de)
DE (1) DE68922212T2 (de)
FR (1) FR2640813A1 (de)
WO (1) WO1990007193A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485033A (en) * 1993-04-07 1996-01-16 U.S. Philips Corporation Lateral transistor having a particular emitter structure
FR2703832A1 (fr) * 1993-04-07 1994-10-14 Philips Composants Dispositif semiconducteur comprenant un transistor vertical.
US7226835B2 (en) * 2001-12-28 2007-06-05 Texas Instruments Incorporated Versatile system for optimizing current gain in bipolar transistor structures
US7358545B2 (en) * 2005-08-10 2008-04-15 United Microelectronics Corp. Bipolar junction transistor
US11508853B2 (en) * 2020-07-28 2022-11-22 Amazing Microelectronic Corp. Vertical bipolar transistor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL242787A (de) * 1958-09-05
US3063879A (en) * 1959-02-26 1962-11-13 Westinghouse Electric Corp Configuration for semiconductor devices
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
US4032957A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
US4032958A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
JPS51128269A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
US4288708A (en) * 1980-05-01 1981-09-08 International Business Machines Corp. Differentially modulated avalanche area magnetically sensitive transistor
FR2592525B1 (fr) * 1985-12-31 1988-02-12 Radiotechnique Compelec Procede de fabrication d'un transistor lateral integre et circuit integre le comprenant

Also Published As

Publication number Publication date
US5250838A (en) 1993-10-05
EP0401354A1 (de) 1990-12-12
DE68922212T2 (de) 1995-11-09
EP0401354B1 (de) 1995-04-12
FR2640813A1 (fr) 1990-06-22
JPH03502987A (ja) 1991-07-04
WO1990007193A1 (en) 1990-06-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee