DE68920378D1 - Schaltung zur selektiven und sehr schnellen Erzeugung einer konstanten Spannung. - Google Patents

Schaltung zur selektiven und sehr schnellen Erzeugung einer konstanten Spannung.

Info

Publication number
DE68920378D1
DE68920378D1 DE68920378T DE68920378T DE68920378D1 DE 68920378 D1 DE68920378 D1 DE 68920378D1 DE 68920378 T DE68920378 T DE 68920378T DE 68920378 T DE68920378 T DE 68920378T DE 68920378 D1 DE68920378 D1 DE 68920378D1
Authority
DE
Germany
Prior art keywords
selective
circuit
constant voltage
fast generation
fast
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68920378T
Other languages
English (en)
Other versions
DE68920378T2 (de
Inventor
Yoshiko Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE68920378D1 publication Critical patent/DE68920378D1/de
Application granted granted Critical
Publication of DE68920378T2 publication Critical patent/DE68920378T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
DE68920378T 1988-08-07 1989-08-04 Schaltung zur selektiven und sehr schnellen Erzeugung einer konstanten Spannung. Expired - Fee Related DE68920378T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63196910A JP2752640B2 (ja) 1988-08-07 1988-08-07 中間レベル発生回路

Publications (2)

Publication Number Publication Date
DE68920378D1 true DE68920378D1 (de) 1995-02-16
DE68920378T2 DE68920378T2 (de) 1995-05-11

Family

ID=16365689

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68920378T Expired - Fee Related DE68920378T2 (de) 1988-08-07 1989-08-04 Schaltung zur selektiven und sehr schnellen Erzeugung einer konstanten Spannung.

Country Status (4)

Country Link
US (1) US4933627A (de)
EP (1) EP0354735B1 (de)
JP (1) JP2752640B2 (de)
DE (1) DE68920378T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0469890A (ja) * 1990-07-10 1992-03-05 Nec Corp 基準電圧発生回路
JP2647276B2 (ja) * 1991-04-30 1997-08-27 株式会社東芝 定電位発生用半導体装置
JPH0554650A (ja) * 1991-08-26 1993-03-05 Nec Corp 半導体集積回路
DE4324855C1 (de) * 1993-07-23 1994-09-22 Siemens Ag Ladungspumpe
US7112897B2 (en) * 2002-12-06 2006-09-26 Northrop Grumman Corporation Capacitor and switch components cooperation to maintain input voltage to target circuit at or above cut-off voltage until power circuit is able to maintain the input voltage
DE10325718B4 (de) * 2003-06-06 2006-07-06 Micronas Gmbh Halbleitersensor mit einem FET und Verfahren zum Ansteuern eines solchen Halbleitersensors
TWI477788B (zh) * 2012-04-10 2015-03-21 Realtek Semiconductor Corp 偵測發光二極體短路的方法及其裝置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4035662A (en) * 1970-11-02 1977-07-12 Texas Instruments Incorporated Capacitive means for controlling threshold voltages in insulated gate field effect transistor circuits
US4042838A (en) * 1976-07-28 1977-08-16 Rockwell International Corporation MOS inverting power driver circuit
US4488060A (en) * 1979-01-24 1984-12-11 Xicor, Inc. High voltage ramp rate control systems
US4347448A (en) * 1980-11-07 1982-08-31 Mostek Corporation Buffer circuit for semiconductor memory
JPS57157315A (en) * 1981-03-24 1982-09-28 Nec Corp Intermediate voltage generating circuit
US4634894A (en) * 1985-03-04 1987-01-06 Advanced Micro Devices, Inc. Low power CMOS reference generator with low impedance driver
JPS62275398A (ja) * 1986-05-23 1987-11-30 Hitachi Ltd 半導体記憶装置
US4857770A (en) * 1988-02-29 1989-08-15 Advanced Micro Devices, Inc. Output buffer arrangement for reducing chip noise without speed penalty

Also Published As

Publication number Publication date
JP2752640B2 (ja) 1998-05-18
JPH0246588A (ja) 1990-02-15
US4933627A (en) 1990-06-12
EP0354735A2 (de) 1990-02-14
EP0354735B1 (de) 1995-01-04
DE68920378T2 (de) 1995-05-11
EP0354735A3 (de) 1991-12-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee