DE68916558T2 - Filmherstellung, zum Beispiel von amorphem Silizium. - Google Patents
Filmherstellung, zum Beispiel von amorphem Silizium.Info
- Publication number
- DE68916558T2 DE68916558T2 DE68916558T DE68916558T DE68916558T2 DE 68916558 T2 DE68916558 T2 DE 68916558T2 DE 68916558 T DE68916558 T DE 68916558T DE 68916558 T DE68916558 T DE 68916558T DE 68916558 T2 DE68916558 T2 DE 68916558T2
- Authority
- DE
- Germany
- Prior art keywords
- amorphous silicon
- film production
- film
- production
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63019675A JPH01196118A (ja) | 1988-02-01 | 1988-02-01 | 膜形成装置 |
JP63051728A JPH01226147A (ja) | 1988-03-07 | 1988-03-07 | 成膜装置および成膜方法 |
JP63051729A JPH01226148A (ja) | 1988-03-07 | 1988-03-07 | 膜形成装置 |
JP63052496A JP2637143B2 (ja) | 1988-03-08 | 1988-03-08 | 成膜装置 |
JP63052495A JPH01227427A (ja) | 1988-03-08 | 1988-03-08 | 成膜装置 |
JP63052494A JP2602881B2 (ja) | 1988-03-08 | 1988-03-08 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68916558D1 DE68916558D1 (de) | 1994-08-11 |
DE68916558T2 true DE68916558T2 (de) | 1995-02-02 |
Family
ID=27548876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68916558T Expired - Fee Related DE68916558T2 (de) | 1988-02-01 | 1989-01-26 | Filmherstellung, zum Beispiel von amorphem Silizium. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5031571A (de) |
EP (1) | EP0327253B1 (de) |
KR (1) | KR910009339B1 (de) |
CN (1) | CN1037551A (de) |
AU (1) | AU616234B2 (de) |
DE (1) | DE68916558T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5275665A (en) * | 1988-06-06 | 1994-01-04 | Research Development Corporation Of Japan | Method and apparatus for causing plasma reaction under atmospheric pressure |
EP0346055B1 (de) * | 1988-06-06 | 1995-04-19 | Research Development Corporation Of Japan | Verfahren zur Durchführung einer Plasmareaktion bei Atmosphärendruck |
DE4025396A1 (de) * | 1990-08-10 | 1992-02-13 | Leybold Ag | Einrichtung fuer die herstellung eines plasmas |
US5316739A (en) * | 1991-08-20 | 1994-05-31 | Bridgestone Corporation | Method and apparatus for surface treatment |
US5292394A (en) * | 1991-11-13 | 1994-03-08 | Leybold Aktiengesellschaft | Apparatus for large-area ionic etching |
DE4233895C2 (de) * | 1992-10-08 | 1996-11-28 | Juergen Prof Dr Engemann | Vorrichtung zur Behandlung von durch einen Wickelmechanismus bewegten bahnförmigen Materialien mittels eines reaktiven bzw. nichtreaktiven, durch Hochfrequenz- oder Pulsentladung erzeugten Niederdruckplasmas |
US5584938A (en) * | 1993-12-10 | 1996-12-17 | Texas Instruments Incorporated | Electrostatic particle removal and characterization |
US5558843A (en) * | 1994-09-01 | 1996-09-24 | Eastman Kodak Company | Near atmospheric pressure treatment of polymers using helium discharges |
JP3295310B2 (ja) * | 1995-08-08 | 2002-06-24 | 三洋電機株式会社 | 回転電極を用いた高速成膜方法及びその装置 |
JP3437386B2 (ja) * | 1996-09-05 | 2003-08-18 | キヤノン株式会社 | 光起電力素子、並びにその製造方法 |
WO2001040540A1 (en) * | 1999-12-02 | 2001-06-07 | Tegal Corporation | Improved reactor with heated and textured electrodes and surfaces |
JP3486590B2 (ja) | 1999-12-03 | 2004-01-13 | キヤノン株式会社 | 堆積膜形成装置 |
KR100767762B1 (ko) * | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치 |
US6559052B2 (en) * | 2000-07-07 | 2003-05-06 | Applied Materials, Inc. | Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures |
KR20050013734A (ko) * | 2003-07-29 | 2005-02-05 | 삼성전자주식회사 | 플라즈마 식각장치 |
JP4306403B2 (ja) * | 2003-10-23 | 2009-08-05 | 東京エレクトロン株式会社 | シャワーヘッド構造及びこれを用いた成膜装置 |
JP4707959B2 (ja) * | 2004-02-20 | 2011-06-22 | 日本エー・エス・エム株式会社 | シャワープレート、プラズマ処理装置及びプラズマ処理方法 |
DE102007019718B3 (de) * | 2007-04-26 | 2008-11-13 | Vtd Vakuumtechnik Dresden Gmbh | Großflächige Plasmaquelle für die Plasmapolymerisation und Verfahren zum Betreiben der Plasmaquelle |
CN101307437B (zh) * | 2008-06-19 | 2010-12-01 | 东莞宏威数码机械有限公司 | 射频电极及薄膜制备装置 |
TWI556309B (zh) | 2009-06-19 | 2016-11-01 | 半導體能源研究所股份有限公司 | 電漿處理裝置,形成膜的方法,和薄膜電晶體的製造方法 |
US20120196242A1 (en) * | 2011-01-27 | 2012-08-02 | Applied Materials, Inc. | Substrate support with heater and rapid temperature change |
US20120298302A1 (en) * | 2011-05-23 | 2012-11-29 | Yaomin Xia | Vacuum plasma pprocessing chamber with a wafer chuck facing downward above the plasma |
KR101685405B1 (ko) * | 2014-12-31 | 2016-12-14 | 주식회사 밸류엔지니어링 | 이온주입기용 리펠러 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4209357A (en) * | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
JPS58157975A (ja) * | 1982-03-10 | 1983-09-20 | Tokyo Ohka Kogyo Co Ltd | プラズマエツチング方法 |
JPS59166238A (ja) * | 1983-03-10 | 1984-09-19 | Toshiba Corp | 薄膜形成装置 |
JPS59217330A (ja) * | 1983-05-26 | 1984-12-07 | Toshiba Corp | 反応性イオンエツチング装置 |
JPS60128612A (ja) * | 1983-12-15 | 1985-07-09 | Ricoh Co Ltd | プラズマcvd装置 |
JPS60189928A (ja) * | 1984-03-12 | 1985-09-27 | Fujitsu Ltd | 減圧気相成長装置 |
JPS6164128A (ja) * | 1984-09-05 | 1986-04-02 | Toshiba Corp | 試料処理装置 |
US4590042A (en) * | 1984-12-24 | 1986-05-20 | Tegal Corporation | Plasma reactor having slotted manifold |
JPS61194180A (ja) * | 1985-01-18 | 1986-08-28 | Nachi Fujikoshi Corp | 中空放電蒸着装置 |
JPH07101751B2 (ja) * | 1985-03-28 | 1995-11-01 | キヤノン株式会社 | 光起電力素子の製造方法 |
JPH06101458B2 (ja) * | 1985-05-09 | 1994-12-12 | 松下電器産業株式会社 | プラズマ気相成長装置 |
US4659401A (en) * | 1985-06-10 | 1987-04-21 | Massachusetts Institute Of Technology | Growth of epitaxial films by plasma enchanced chemical vapor deposition (PE-CVD) |
JPS6213573A (ja) * | 1985-07-10 | 1987-01-22 | Fujitsu Ltd | Cvd装置 |
US4612077A (en) * | 1985-07-29 | 1986-09-16 | The Perkin-Elmer Corporation | Electrode for plasma etching system |
JPS6260875A (ja) * | 1985-09-10 | 1987-03-17 | Matsushita Electric Ind Co Ltd | プラズマcvd装置 |
JPS62142314A (ja) * | 1985-12-17 | 1987-06-25 | Matsushita Electric Ind Co Ltd | プラズマcvd装置 |
JPS62199019A (ja) * | 1986-02-27 | 1987-09-02 | Oki Electric Ind Co Ltd | ウエハ処理装置 |
DE3606959A1 (de) * | 1986-03-04 | 1987-09-10 | Leybold Heraeus Gmbh & Co Kg | Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung |
US4780169A (en) * | 1987-05-11 | 1988-10-25 | Tegal Corporation | Non-uniform gas inlet for dry etching apparatus |
EP0346055B1 (de) * | 1988-06-06 | 1995-04-19 | Research Development Corporation Of Japan | Verfahren zur Durchführung einer Plasmareaktion bei Atmosphärendruck |
-
1989
- 1989-01-25 US US07/301,138 patent/US5031571A/en not_active Expired - Fee Related
- 1989-01-26 DE DE68916558T patent/DE68916558T2/de not_active Expired - Fee Related
- 1989-01-26 EP EP89300731A patent/EP0327253B1/de not_active Expired - Lifetime
- 1989-01-27 AU AU28911/89A patent/AU616234B2/en not_active Ceased
- 1989-01-31 KR KR1019890001061A patent/KR910009339B1/ko not_active IP Right Cessation
- 1989-02-01 CN CN89101639A patent/CN1037551A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0327253A2 (de) | 1989-08-09 |
EP0327253A3 (en) | 1990-07-25 |
KR910009339B1 (ko) | 1991-11-11 |
CN1037551A (zh) | 1989-11-29 |
EP0327253B1 (de) | 1994-07-06 |
KR890013818A (ko) | 1989-09-26 |
AU616234B2 (en) | 1991-10-24 |
DE68916558D1 (de) | 1994-08-11 |
US5031571A (en) | 1991-07-16 |
AU2891189A (en) | 1989-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE68916558D1 (de) | Filmherstellung, zum Beispiel von amorphem Silizium. | |
ATE68053T1 (de) | Photochromische artikel. | |
DE3887130D1 (de) | Ferro-elektrisches Festhalteverfahren. | |
DE3786794D1 (de) | Verahren zur vermehrung von knollen. | |
DE3783160D1 (de) | Hartloetverfahren. | |
DE3884956T2 (de) | Klärverfahren. | |
DE68921273D1 (de) | System zum kontinuierlichen Behandeln von Halbleitersubstraten. | |
DE3789424D1 (de) | Vorrichtung um dünne Schichten herzustellen. | |
DE3786777D1 (de) | Vorrichtung zum herstellen von beipackzetteln. | |
DE3785617D1 (de) | Immunassay-prozess. | |
FR2616360B1 (fr) | Film polarisant, son procede de production et son utilisation | |
DE68915698D1 (de) | Hydrogenierungsverfahren. | |
DE3751259D1 (de) | Kurvenerzeugungsverfahren. | |
DE3789121T2 (de) | Entwicklungsverfahren. | |
DE68902806D1 (de) | Beschichtungsverfahren. | |
FI900684A0 (fi) | Process foer framstaellning av polyaluminiumfoereningar. | |
FI884883A (fi) | Ny process. | |
FI920196A0 (fi) | Miljoevaenligare process foer blekning av lignocellulosamaterial. | |
DE68922054T2 (de) | Verfahren zum Stabilisieren von amorphen Halbleitern. | |
DE68901000D1 (de) | Beschichtungsverfahren. | |
FI882261A (fi) | Foerfarande foer styrning av process. | |
FI884766A (fi) | Syrakatalyserad process. | |
DE3885851D1 (de) | Modifizierungsverfahren. | |
FI903088A0 (fi) | Process foer framstaellning av straengsprutade skumkroppar. | |
DE68914747D1 (de) | Druckverfahren. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: MITSUI CHEMICALS, INC., TOKIO/TOKYO, JP |
|
8339 | Ceased/non-payment of the annual fee |