DE68916281T2 - EEPROM mit durch Daten gesteuerten Löschungs- und Schreibmodus. - Google Patents

EEPROM mit durch Daten gesteuerten Löschungs- und Schreibmodus.

Info

Publication number
DE68916281T2
DE68916281T2 DE68916281T DE68916281T DE68916281T2 DE 68916281 T2 DE68916281 T2 DE 68916281T2 DE 68916281 T DE68916281 T DE 68916281T DE 68916281 T DE68916281 T DE 68916281T DE 68916281 T2 DE68916281 T2 DE 68916281T2
Authority
DE
Germany
Prior art keywords
eeprom
data
write mode
controlled erase
erase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68916281T
Other languages
English (en)
Other versions
DE68916281D1 (de
Inventor
Ernst Feller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE68916281D1 publication Critical patent/DE68916281D1/de
Application granted granted Critical
Publication of DE68916281T2 publication Critical patent/DE68916281T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/24—Nonvolatile memory in which programming can be carried out in one memory bank or array whilst a word or sector in another bank or array is being erased simultaneously

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
DE68916281T 1988-03-09 1989-03-06 EEPROM mit durch Daten gesteuerten Löschungs- und Schreibmodus. Expired - Fee Related DE68916281T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8800583 1988-03-09

Publications (2)

Publication Number Publication Date
DE68916281D1 DE68916281D1 (de) 1994-07-28
DE68916281T2 true DE68916281T2 (de) 1995-01-26

Family

ID=19851909

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68916281T Expired - Fee Related DE68916281T2 (de) 1988-03-09 1989-03-06 EEPROM mit durch Daten gesteuerten Löschungs- und Schreibmodus.

Country Status (4)

Country Link
EP (1) EP0332274B1 (de)
JP (1) JP2847141B2 (de)
KR (1) KR0153518B1 (de)
DE (1) DE68916281T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03232196A (ja) * 1990-02-07 1991-10-16 Toshiba Corp 半導体記憶装置
KR940004404B1 (ko) * 1990-11-30 1994-05-25 삼성전자 주식회사 불휘발성 반도체 메모리장치
FR2735896B1 (fr) * 1995-06-21 1997-08-22 Sgs Thomson Microelectronics Memoire eeprom programmable et effacable par effet de fowler-nordheim
DE19730116C2 (de) * 1997-07-14 2001-12-06 Infineon Technologies Ag Halbleiterspeicher mit nicht-flüchtigen Zwei-Transistor-Speicherzellen
KR102245674B1 (ko) 2017-11-17 2021-04-27 주식회사 엘지화학 고상 추출용 마이크로 디바이스

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3938108A (en) * 1975-02-03 1976-02-10 Intel Corporation Erasable programmable read-only memory
JPS6045495B2 (ja) * 1981-07-08 1985-10-09 日本電気ホームエレクトロニクス株式会社 マルチメモリ駆動方法
US4442510A (en) * 1981-12-28 1984-04-10 National Semiconductor Corporation Semiconductor memory byte clear circuit
US4566080A (en) * 1983-07-11 1986-01-21 Signetics Corporation Byte wide EEPROM with individual write circuits
JPH0736274B2 (ja) * 1985-10-08 1995-04-19 日本電気株式会社 読出し専用メモリ

Also Published As

Publication number Publication date
KR890015279A (ko) 1989-10-28
EP0332274A2 (de) 1989-09-13
DE68916281D1 (de) 1994-07-28
JP2847141B2 (ja) 1999-01-13
EP0332274A3 (de) 1991-10-09
JPH0214494A (ja) 1990-01-18
KR0153518B1 (ko) 1998-12-01
EP0332274B1 (de) 1994-06-22

Similar Documents

Publication Publication Date Title
DE69430668D1 (de) Flash-speicher mit verringerter löschung und überschreibung
DE69714763T2 (de) Nichtflüchtige speichermatrix mit gleichzeitiger lese- und schreiboperation
DE69311554T2 (de) Massenspeicherkarte mit eingangs- ausgangsfunktion.
DE68923828D1 (de) Architektur und Schnittstelle für Speicherkarten.
DE68902128D1 (de) Nagelband.
DE69128021D1 (de) Lese-/Schreibe-Speicher mit einem verbesserten Schreibtreiber
NL193571B (nl) Rolmaat met verbeterde verbinding tussen veer en meetlint.
DE68918469T2 (de) Serieller Lesezugriff von seriellen Speichern mit einer durch den Benutzer definierten Startadresse.
DE69217065D1 (de) Durch infrarot direktbeschreibbare aufzeichnungsmaterialien
DE68924635D1 (de) Datenaufzeichnungsgerät.
DE3580962D1 (de) Nichtfluechtige dynamische schreib-/lesespeicher mit wahlfreiem zugriff.
DE69122133D1 (de) Aufzeichnungs- und Wiedergabegerät mit Programminformation
DE3888296T2 (de) Optisches Informationsaufzeichnungs- und -löschverfahren.
DE68919535D1 (de) Antriebsschaltung mit Kontrollinformationsspeicher.
DE68913373T2 (de) Verfahren zur gleichzeitigen Dateneingabe in überlappende Fenster.
DE68920443D1 (de) Systembus mit multiplexbetriebenen steuer-kennzeichnungsinformationen und daten.
DE68918231T2 (de) Aufnahmegerät mit mehreren Entwicklungseinheiten.
DE69033416T2 (de) Hauptspeicherkarten mit Einzelbit-Setz- und Rücksetz-Funktion
DE68916281D1 (de) EEPROM mit durch Daten gesteuerten Löschungs- und Schreibmodus.
DE69600711T2 (de) EEPROM-Speicher, der mit Fowler-Nordheim Effekt programmiert und gelöscht wird
DE68924115T2 (de) Aufzeichnungs- und/oder Wiedergabeeinrichtung von Informationssignalen.
DE69014189T2 (de) Speicher mit verbesserter Lesezeit.
DE69420443D1 (de) Datenspeicher mit vorbestimmten logischen Bereichen
DE69133092D1 (de) Speicherkarte mit EEPROM
DE68910956D1 (de) Mit toxin modifizierter antikörper.

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee