DE68913912D1 - Verfahren zur Synthese von körnigem Diamant. - Google Patents
Verfahren zur Synthese von körnigem Diamant.Info
- Publication number
- DE68913912D1 DE68913912D1 DE89310676T DE68913912T DE68913912D1 DE 68913912 D1 DE68913912 D1 DE 68913912D1 DE 89310676 T DE89310676 T DE 89310676T DE 68913912 T DE68913912 T DE 68913912T DE 68913912 D1 DE68913912 D1 DE 68913912D1
- Authority
- DE
- Germany
- Prior art keywords
- synthesis
- granular diamond
- diamond
- granular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
- B01J8/42—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with fluidised bed subjected to electric current or to radiations this sub-group includes the fluidised bed subjected to electric or magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0894—Processes carried out in the presence of a plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Combustion & Propulsion (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63264718A JP2639505B2 (ja) | 1988-10-20 | 1988-10-20 | 粒状ダイヤモンドの合成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68913912D1 true DE68913912D1 (de) | 1994-04-21 |
DE68913912T2 DE68913912T2 (de) | 1994-08-11 |
Family
ID=17407218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68913912T Expired - Fee Related DE68913912T2 (de) | 1988-10-20 | 1989-10-18 | Verfahren zur Synthese von körnigem Diamant. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5372799A (de) |
EP (1) | EP0368490B1 (de) |
JP (1) | JP2639505B2 (de) |
DE (1) | DE68913912T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0549186A1 (de) * | 1991-12-26 | 1993-06-30 | General Electric Company | Diamant-Überzuge |
DE4217328C1 (en) * | 1992-05-26 | 1993-09-02 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De | Diamond layer CVD appts. - has closed gas circuit contg. carbon reactor for process gas regeneration |
JPH0738169U (ja) * | 1993-12-17 | 1995-07-14 | シチズン時計株式会社 | 編機用部品 |
US5628824A (en) * | 1995-03-16 | 1997-05-13 | The University Of Alabama At Birmingham Research Foundation | High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition |
DE19636525C2 (de) * | 1996-09-09 | 2003-03-13 | Waltraud Werdecker | Verfahren zum Beschichten eines Trägers mit einer Oberflächenschicht aus synthetischer Diamantphase, mittels des Verfahrens hergestelltes Komposit, sowie dessen Verwendung |
EP1321545A1 (de) * | 2001-12-20 | 2003-06-25 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Verfahren zur Herstellung von Teilchen mit Diamantstruktur |
UA83414C2 (uk) * | 2004-01-15 | 2008-07-10 | Элемент Сикс Лимитэд | Надтвердий абразив з покриттям |
WO2010124625A1 (zh) * | 2009-04-28 | 2010-11-04 | Chu Xi | 生产大颗粒金刚石的方法和设备 |
DE102010044859A1 (de) * | 2010-09-09 | 2012-03-15 | Siemens Aktiengesellschaft | Vorrichtung zum Betreiben eines Kreislaufsystems, Verfahren zum Beschichten und Verwendung von Generator- und/oder Turbinenschaufeln und/oder Kondensatorrohrböden eines Kraftwerkskondensators |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58135117A (ja) * | 1982-01-29 | 1983-08-11 | Natl Inst For Res In Inorg Mater | ダイヤモンドの製造法 |
US4416913A (en) * | 1982-09-28 | 1983-11-22 | Motorola, Inc. | Ascending differential silicon harvesting means and method |
JPS59137311A (ja) * | 1983-01-21 | 1984-08-07 | Natl Inst For Res In Inorg Mater | 多結晶質ダイヤモンドの合成法 |
JPS60112169A (ja) * | 1983-11-22 | 1985-06-18 | Mitsubishi Electric Corp | マルチコンピユ−タ・システムにおける異常監視方法 |
JPS60231498A (ja) * | 1984-05-01 | 1985-11-18 | Hitachi Ltd | ダイヤモンド低圧合成法 |
JPS6115239A (ja) * | 1984-06-30 | 1986-01-23 | Oki Electric Ind Co Ltd | プロセツサ診断方式 |
JPS62135950A (ja) * | 1985-12-09 | 1987-06-18 | Fujitsu Ltd | 障害状態通知方式 |
US5015528A (en) * | 1987-03-30 | 1991-05-14 | Crystallume | Fluidized bed diamond particle growth |
US4859493A (en) * | 1987-03-31 | 1989-08-22 | Lemelson Jerome H | Methods of forming synthetic diamond coatings on particles using microwaves |
DE3854026D1 (de) * | 1987-09-04 | 1995-07-27 | Digital Equipment Corp | Fehlertolerantes Rechnersystem mit Fehler-Eingrenzung. |
JPH03282738A (ja) * | 1990-03-30 | 1991-12-12 | Nec Corp | 情報処理装置 |
-
1988
- 1988-10-20 JP JP63264718A patent/JP2639505B2/ja not_active Expired - Fee Related
-
1989
- 1989-10-18 EP EP89310676A patent/EP0368490B1/de not_active Expired - Lifetime
- 1989-10-18 DE DE68913912T patent/DE68913912T2/de not_active Expired - Fee Related
- 1989-10-20 US US07/425,833 patent/US5372799A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0368490A1 (de) | 1990-05-16 |
DE68913912T2 (de) | 1994-08-11 |
JPH02111612A (ja) | 1990-04-24 |
JP2639505B2 (ja) | 1997-08-13 |
US5372799A (en) | 1994-12-13 |
EP0368490B1 (de) | 1994-03-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |