DE68911373T2 - Verfahren zur Erzeugung eines hohen Flusses von aktivierten Teilchen für die Reaktion mit einem entfernt angeordneten Substrat. - Google Patents

Verfahren zur Erzeugung eines hohen Flusses von aktivierten Teilchen für die Reaktion mit einem entfernt angeordneten Substrat.

Info

Publication number
DE68911373T2
DE68911373T2 DE68911373T DE68911373T DE68911373T2 DE 68911373 T2 DE68911373 T2 DE 68911373T2 DE 68911373 T DE68911373 T DE 68911373T DE 68911373 T DE68911373 T DE 68911373T DE 68911373 T2 DE68911373 T2 DE 68911373T2
Authority
DE
Germany
Prior art keywords
reaction
generating
high flow
activated particles
remote substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68911373T
Other languages
English (en)
Other versions
DE68911373D1 (de
Inventor
Joachim Doehler
Stephen Hudgens
Stanford Ovshinsky
Ii Buddy Dotter
Lester Peedin
Jeffrey Krisko
Annette Krisko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of DE68911373D1 publication Critical patent/DE68911373D1/de
Publication of DE68911373T2 publication Critical patent/DE68911373T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/4551—Jet streams
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/739—Molding, coating, shaping, or casting of superconducting material
    • Y10S505/741—Coating or casting onto a substrate, e.g. screen printing, tape casting

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
DE68911373T 1988-05-26 1989-04-11 Verfahren zur Erzeugung eines hohen Flusses von aktivierten Teilchen für die Reaktion mit einem entfernt angeordneten Substrat. Expired - Fee Related DE68911373T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/199,062 US4883686A (en) 1988-05-26 1988-05-26 Method for the high rate plasma deposition of high quality material

Publications (2)

Publication Number Publication Date
DE68911373D1 DE68911373D1 (de) 1994-01-27
DE68911373T2 true DE68911373T2 (de) 1994-05-19

Family

ID=22736050

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68911373T Expired - Fee Related DE68911373T2 (de) 1988-05-26 1989-04-11 Verfahren zur Erzeugung eines hohen Flusses von aktivierten Teilchen für die Reaktion mit einem entfernt angeordneten Substrat.

Country Status (6)

Country Link
US (1) US4883686A (de)
EP (1) EP0343355B1 (de)
JP (1) JP2854603B2 (de)
KR (1) KR0136863B1 (de)
CA (1) CA1339914C (de)
DE (1) DE68911373T2 (de)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3725700A1 (de) * 1987-08-03 1989-02-16 Siemens Ag Neues halbleitergrundmaterial
US5231073A (en) * 1987-11-18 1993-07-27 Massachusetts Institute Of Technology Microwave/far infrared cavities and waveguides using high temperature superconductors
US5180436A (en) * 1988-07-26 1993-01-19 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
US5125358A (en) * 1988-07-26 1992-06-30 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
US4988644A (en) * 1989-05-23 1991-01-29 Texas Instruments Incorporated Method for etching semiconductor materials using a remote plasma generator
EP0411435B1 (de) * 1989-07-31 1994-01-12 Matsushita Electric Industrial Co., Ltd. Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht
US5258207A (en) * 1989-08-31 1993-11-02 Sanyo Electric Co., Ltd. Amorphous silicon film, its production and photo semiconductor device utilizing such a film
US5068124A (en) * 1989-11-17 1991-11-26 International Business Machines Corporation Method for depositing high quality silicon dioxide by pecvd
JP2770544B2 (ja) * 1990-03-23 1998-07-02 松下電器産業株式会社 Ｍｉｓ型半導体装置の製造方法
EP0470274A1 (de) * 1990-08-06 1992-02-12 Energy Conversion Devices, Inc. Verfahren zum Auftragen unmittelbar aktivierter Teilchen auf ein entfernt angeordnetes Substrat
WO1992006488A1 (en) * 1990-10-05 1992-04-16 Fujitsu Limited Vapor supplier and its control method
US5334277A (en) * 1990-10-25 1994-08-02 Nichia Kagaky Kogyo K.K. Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
US5433169A (en) * 1990-10-25 1995-07-18 Nichia Chemical Industries, Ltd. Method of depositing a gallium nitride-based III-V group compound semiconductor crystal layer
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
US5073507A (en) * 1991-03-04 1991-12-17 Motorola, Inc. Producing a plasma containing beryllium and beryllium fluoride
JP2764472B2 (ja) * 1991-03-25 1998-06-11 東京エレクトロン株式会社 半導体の成膜方法
US5231048A (en) * 1991-12-23 1993-07-27 United Solar Systems Corporation Microwave energized deposition process wherein the deposition is carried out at a pressure less than the pressure of the minimum point on the deposition system's paschen curve
MX9303141A (es) * 1992-05-28 1994-04-29 Polar Materials Inc Metodos y aparatos para depositar recubrimientos de barrera.
US5334423A (en) * 1993-01-28 1994-08-02 United Solar Systems Corp. Microwave energized process for the preparation of high quality semiconductor material
US5344792A (en) * 1993-03-04 1994-09-06 Micron Technology, Inc. Pulsed plasma enhanced CVD of metal silicide conductive films such as TiSi2
JPH09270421A (ja) 1996-04-01 1997-10-14 Mitsubishi Electric Corp 表面処理装置および表面処理方法
US6112695A (en) 1996-10-08 2000-09-05 Nano Scale Surface Systems, Inc. Apparatus for plasma deposition of a thin film onto the interior surface of a container
DE19643865C2 (de) * 1996-10-30 1999-04-08 Schott Glas Plasmaunterstütztes chemisches Abscheidungsverfahren (CVD) mit entfernter Anregung eines Anregungsgases (Remote-Plasma-CVD-Verfahren) zur Beschichtung oder zur Behandlung großflächiger Substrate und Vorrichtung zur Durchführung desselben
US5851588A (en) * 1996-11-21 1998-12-22 Eaton Corporation Method for making open-mesh carbon-fiber-reinforced carbon composite material
US6028393A (en) * 1998-01-22 2000-02-22 Energy Conversion Devices, Inc. E-beam/microwave gas jet PECVD method and apparatus for depositing and/or surface modification of thin film materials
DE19824364A1 (de) * 1998-05-30 1999-12-02 Bosch Gmbh Robert Verfahren zum Aufbringen eines Verschleißschutz-Schichtsystems mit optischen Eigenschaften auf Oberflächen
US7260051B1 (en) 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
US6499425B1 (en) 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
US6466881B1 (en) * 1999-04-22 2002-10-15 Applied Materials Inc. Method for monitoring the quality of a protective coating in a reactor chamber
CA2399895A1 (en) * 2000-02-22 2001-08-30 Energy Conversion Devices, Inc. E-beam/microwave gas jet pecvd method and apparatus for depositing and/or surface modification of thin film materials
JP5010781B2 (ja) * 2001-03-28 2012-08-29 忠弘 大見 プラズマ処理装置
US20040253777A1 (en) * 2001-08-30 2004-12-16 Hidenori Miyoshi Method and apparatus for forming film
US6985377B2 (en) 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage
US7233517B2 (en) 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US7972663B2 (en) * 2002-12-20 2011-07-05 Applied Materials, Inc. Method and apparatus for forming a high quality low temperature silicon nitride layer
US7172792B2 (en) * 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
JP4495471B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
US20050232061A1 (en) 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US7301887B2 (en) 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
KR100589062B1 (ko) * 2004-06-10 2006-06-12 삼성전자주식회사 원자층 적층 방식의 박막 형성방법 및 이를 이용한 반도체소자의 커패시터 형성방법
US20060185591A1 (en) * 2005-02-18 2006-08-24 General Electric Company High temperature chemical vapor deposition apparatus
US7463573B2 (en) 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US7367119B2 (en) 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US7309630B2 (en) 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
JP4534041B2 (ja) * 2005-08-02 2010-09-01 株式会社デンソー 半導体装置の製造方法
US7704887B2 (en) * 2005-11-22 2010-04-27 Applied Materials, Inc. Remote plasma pre-clean with low hydrogen pressure
US20080090022A1 (en) * 2006-10-12 2008-04-17 Energy Conversion Devices, Inc. High rate, continuous deposition of high quality amorphous, nanocrystalline, microcrystalline or polycrystalline materials
US20090053428A1 (en) * 2006-10-12 2009-02-26 Ovshinsky Stanford R Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
US20090031951A1 (en) * 2006-10-12 2009-02-05 Ovshinsky Stanford R Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
US20090130337A1 (en) * 2006-10-12 2009-05-21 Ovshinsky Stanford R Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
US20090050058A1 (en) * 2006-10-12 2009-02-26 Ovshinsky Stanford R Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
US8252112B2 (en) * 2008-09-12 2012-08-28 Ovshinsky Innovation, Llc High speed thin film deposition via pre-selected intermediate
US7985188B2 (en) * 2009-05-13 2011-07-26 Cv Holdings Llc Vessel, coating, inspection and processing apparatus
ES2513866T3 (es) 2009-05-13 2014-10-27 Sio2 Medical Products, Inc. Revestimiento e inspección de recipientes
WO2013170052A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
WO2011116991A1 (de) * 2010-03-26 2011-09-29 Hq-Dielectrics Gmbh Vorrichtung und verfahren zum behandeln von substraten
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
CN103930595A (zh) 2011-11-11 2014-07-16 Sio2医药产品公司 用于药物包装的钝化、pH保护性或润滑性涂层、涂布方法以及设备
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
JP6022276B2 (ja) * 2012-09-20 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
WO2014071061A1 (en) 2012-11-01 2014-05-08 Sio2 Medical Products, Inc. Coating inspection method
US9903782B2 (en) 2012-11-16 2018-02-27 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
AU2013352436B2 (en) 2012-11-30 2018-10-25 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition on medical syringes, cartridges, and the like
EP2961858B1 (de) 2013-03-01 2022-09-07 Si02 Medical Products, Inc. Beschichtete spritze.
CN110074968B (zh) 2013-03-11 2021-12-21 Sio2医药产品公司 涂布包装材料
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
WO2014144926A1 (en) 2013-03-15 2014-09-18 Sio2 Medical Products, Inc. Coating method
EP3693493A1 (de) 2014-03-28 2020-08-12 SiO2 Medical Products, Inc. Antistatische beschichtungen für kunststoffbehälter
US9837254B2 (en) * 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
EP3337915B1 (de) 2015-08-18 2021-11-03 SiO2 Medical Products, Inc. Pharmazeutische und andere verpackungen mit niedriger sauerstoffübertragungsrate
KR20190003094U (ko) 2018-06-07 2019-12-17 김준호 장식용 뱃지

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4282267A (en) * 1979-09-20 1981-08-04 Western Electric Co., Inc. Methods and apparatus for generating plasmas
JPS60141869A (ja) * 1983-12-29 1985-07-26 Nissin Electric Co Ltd 膜形成方法および膜形成装置
US4656052A (en) * 1984-02-13 1987-04-07 Kyocera Corporation Process for production of high-hardness boron nitride film
JPS60221566A (ja) * 1984-04-18 1985-11-06 Agency Of Ind Science & Technol 薄膜形成装置
JPH084071B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 堆積膜形成法
EP0241317B1 (de) * 1986-04-11 1993-03-10 Canon Kabushiki Kaisha Herstellungsverfahren einer niedergeschlagenen Schicht
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source

Also Published As

Publication number Publication date
KR890017009A (ko) 1989-12-14
EP0343355A1 (de) 1989-11-29
EP0343355B1 (de) 1993-12-15
US4883686A (en) 1989-11-28
JP2854603B2 (ja) 1999-02-03
CA1339914C (en) 1998-06-16
KR0136863B1 (ko) 1998-04-25
JPH0219471A (ja) 1990-01-23
DE68911373D1 (de) 1994-01-27

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