DE68909774D1 - Abscheidung von Siliziumdioxid-Filmen, ausgehend von flüssigen Alkylsilanen. - Google Patents

Abscheidung von Siliziumdioxid-Filmen, ausgehend von flüssigen Alkylsilanen.

Info

Publication number
DE68909774D1
DE68909774D1 DE89119523T DE68909774T DE68909774D1 DE 68909774 D1 DE68909774 D1 DE 68909774D1 DE 89119523 T DE89119523 T DE 89119523T DE 68909774 T DE68909774 T DE 68909774T DE 68909774 D1 DE68909774 D1 DE 68909774D1
Authority
DE
Germany
Prior art keywords
alkylsilanes
deposition
liquid
silicon dioxide
films based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89119523T
Other languages
English (en)
Other versions
DE68909774T2 (de
Inventor
Arthur Kenneth Hochberg
David Lillis O'meara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Application granted granted Critical
Publication of DE68909774D1 publication Critical patent/DE68909774D1/de
Publication of DE68909774T2 publication Critical patent/DE68909774T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
DE89119523T 1988-10-27 1989-10-20 Abscheidung von Siliziumdioxid-Filmen, ausgehend von flüssigen Alkylsilanen. Expired - Fee Related DE68909774T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26348788A 1988-10-27 1988-10-27

Publications (2)

Publication Number Publication Date
DE68909774D1 true DE68909774D1 (de) 1993-11-11
DE68909774T2 DE68909774T2 (de) 1994-01-27

Family

ID=23001985

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89119523T Expired - Fee Related DE68909774T2 (de) 1988-10-27 1989-10-20 Abscheidung von Siliziumdioxid-Filmen, ausgehend von flüssigen Alkylsilanen.

Country Status (5)

Country Link
US (1) US4981724A (de)
EP (1) EP0387403B1 (de)
JP (1) JPH0776426B2 (de)
CA (1) CA1337033C (de)
DE (1) DE68909774T2 (de)

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US5040046A (en) * 1990-10-09 1991-08-13 Micron Technology, Inc. Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby
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DE4225106C2 (de) * 1992-07-30 1995-10-05 Heraeus Kulzer Gmbh Verfahren und Vorrichtung zur Herstellung eines Metall-Kunststoff-Verbundes
FR2697014B1 (fr) * 1992-10-19 1995-01-20 Souchon Neuvesel Verreries Procédé de revêtement d'un substrat en matériau vitreux, par un film de silice.
US5670224A (en) * 1992-11-13 1997-09-23 Energy Conversion Devices, Inc. Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates
JPH06244426A (ja) * 1993-02-04 1994-09-02 Toagosei Chem Ind Co Ltd 薄膜形成用ガラス基板の製造方法
TW285753B (de) * 1995-01-04 1996-09-11 Air Prod & Chem
US5637351A (en) * 1995-05-11 1997-06-10 Air Products And Chemicals, Inc. Chemical vapor deposition (CVD) of silicon dioxide films using oxygen-silicon source reactants and a free radical promoter
TW392288B (en) * 1997-06-06 2000-06-01 Dow Corning Thermally stable dielectric coatings
JP3173426B2 (ja) * 1997-06-09 2001-06-04 日本電気株式会社 シリカ絶縁膜の製造方法及び半導体装置の製造方法
US6531193B2 (en) 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6287990B1 (en) * 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6627532B1 (en) * 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6593247B1 (en) 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6667553B2 (en) 1998-05-29 2003-12-23 Dow Corning Corporation H:SiOC coated substrates
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6168726B1 (en) 1998-11-25 2001-01-02 Applied Materials, Inc. Etching an oxidized organo-silane film
US6303047B1 (en) * 1999-03-22 2001-10-16 Lsi Logic Corporation Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making same
US6475276B1 (en) 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
US6399489B1 (en) 1999-11-01 2002-06-04 Applied Materials, Inc. Barrier layer deposition using HDP-CVD
FI20000099A0 (fi) 2000-01-18 2000-01-18 Asm Microchemistry Ltd Menetelmä metalliohutkalvojen kasvattamiseksi
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US7037574B2 (en) * 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US6926926B2 (en) * 2001-09-10 2005-08-09 Applied Materials, Inc. Silicon carbide deposited by high density plasma chemical-vapor deposition with bias
WO2003025243A2 (en) 2001-09-14 2003-03-27 Asm International N.V. Metal nitride deposition by ald using gettering reactant
US6890850B2 (en) 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6838393B2 (en) * 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
US20030211244A1 (en) * 2002-04-11 2003-11-13 Applied Materials, Inc. Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric
US20030194495A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectric
US6815373B2 (en) * 2002-04-16 2004-11-09 Applied Materials Inc. Use of cyclic siloxanes for hardness improvement of low k dielectric films
US6897163B2 (en) * 2003-01-31 2005-05-24 Applied Materials, Inc. Method for depositing a low dielectric constant film
US7071117B2 (en) * 2004-02-27 2006-07-04 Micron Technology, Inc. Semiconductor devices and methods for depositing a dielectric film
US7030041B2 (en) * 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US7405143B2 (en) 2004-03-25 2008-07-29 Asm International N.V. Method for fabricating a seed layer
JP2006041118A (ja) * 2004-07-26 2006-02-09 Toshiba Corp 半導体装置及びその製造方法
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
JP5040162B2 (ja) * 2006-04-27 2012-10-03 東ソー株式会社 アルケニル基含有有機シラン化合物から成るＳｉ含有膜形成材料およびその用途
US8268409B2 (en) 2006-10-25 2012-09-18 Asm America, Inc. Plasma-enhanced deposition of metal carbide films
US20080124946A1 (en) * 2006-11-28 2008-05-29 Air Products And Chemicals, Inc. Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films
US7713874B2 (en) 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
JP5551681B2 (ja) 2008-04-16 2014-07-16 エーエスエム アメリカ インコーポレイテッド アルミニウム炭化水素化合物を使用する金属炭化物膜の原子層堆積
US7666474B2 (en) 2008-05-07 2010-02-23 Asm America, Inc. Plasma-enhanced pulsed deposition of metal carbide films
JP5809152B2 (ja) 2009-10-20 2015-11-10 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． 誘電体膜をパッシベーションする方法
KR20120122518A (ko) * 2011-04-29 2012-11-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
EP2761054B1 (de) * 2011-09-30 2019-08-14 Arkema, Inc. Siliciumoxidbeschichtung durch eine chemische dampfablagerung unter normaldruck
WO2013134661A1 (en) * 2012-03-09 2013-09-12 Air Products And Chemicals, Inc. Barrier materials for display devices
US11626279B2 (en) 2012-03-09 2023-04-11 Versum Materials Us, Llc Compositions and methods for making silicon containing films
US9412602B2 (en) 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films
US10643925B2 (en) 2014-04-17 2020-05-05 Asm Ip Holding B.V. Fluorine-containing conductive films
US10002936B2 (en) 2014-10-23 2018-06-19 Asm Ip Holding B.V. Titanium aluminum and tantalum aluminum thin films
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
US11158500B2 (en) 2017-05-05 2021-10-26 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of oxygen containing thin films
JP6955090B2 (ja) 2017-09-19 2021-10-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 酸化ケイ素上における誘電体の選択的堆積のための方法
US10991573B2 (en) 2017-12-04 2021-04-27 Asm Ip Holding B.V. Uniform deposition of SiOC on dielectric and metal surfaces

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL42249A (en) * 1973-05-11 1976-07-30 Yissum Res Dev Co Process of producing films of silicon dioxide and silicon carbide and method of making semiconductor devices
US4206252A (en) * 1977-04-04 1980-06-03 Gordon Roy G Deposition method for coating glass and the like
US4877651A (en) * 1988-05-31 1989-10-31 Olin Corporation Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate

Also Published As

Publication number Publication date
EP0387403B1 (de) 1993-10-06
EP0387403A1 (de) 1990-09-19
DE68909774T2 (de) 1994-01-27
JPH02170974A (ja) 1990-07-02
CA1337033C (en) 1995-09-19
US4981724A (en) 1991-01-01
JPH0776426B2 (ja) 1995-08-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee