IL42249A - Process of producing films of silicon dioxide and silicon carbide and method of making semiconductor devices - Google Patents
Process of producing films of silicon dioxide and silicon carbide and method of making semiconductor devicesInfo
- Publication number
- IL42249A IL42249A IL42249A IL4224973A IL42249A IL 42249 A IL42249 A IL 42249A IL 42249 A IL42249 A IL 42249A IL 4224973 A IL4224973 A IL 4224973A IL 42249 A IL42249 A IL 42249A
- Authority
- IL
- Israel
- Prior art keywords
- silicon dioxide
- silicon
- alkyl
- silicon carbide
- process according
- Prior art date
Links
Landscapes
- Formation Of Insulating Films (AREA)
Claims (12)
1. A process of producing films of silicon dioxide or silicon carbide, characterized in chemically depositing the silicon dioxide or silicon carbide from a non- halogenated khk alkyl silicon compound in vapour form on a heated substrate,
2. A process according to Claim 1, wherein said chemical deposition is carried out in the presence of oxygen to produce a silicon dioxide film.
3. A process according to Claim 1, wherein said chemical deposition is carried o^in the absence of oxygen Q ckS and in the presence of a hydrogen-free carrier/ to produce a silicon carbide film.
4. The process according to any one of Claims 1-3, wherein said alkyl silicon compound is tetramethylsilane.
5. The process according to any one of Claims 1-3* wherein said alkyl silicon compound is tetraethylsilaee.
6. The method according to any one of Claims 1-3* wherein said alkyl silicon compound is tripropylsilans
7. The method according to any one of Claims 1-3* wherein said alkyl silicon compound is die hylsilane.
8. The process of making a semi-conducting device, characterized in that the masking layer is a film of silicon dioxide deposited on semiconductor substrate in accordance with the process of Claim 2.
9. A process of making metal-oxide-semiconductor in field-effect-transistors characterized/that the gate oxide layer is silicon dioxide deposited by the process of Claim 2,
10. A process of making raetalbxide semiconductor capacitors characterized in that the dielectric layer is silicon dioxide deposited by the process of Claim 2.
11. The process according to Claim 10, further characterized in that the electrode layers are all deposited in the form of dots by evaporating aluminum on the silicon dioxide layer.
12. A process of producing films of silicon dioxide or silicon carbide in accordance with the disclosed examples. r\ 1 3. A process of making metal-oxide semiconductor articles substantially as described with reference toll the disclosed examples. -13-
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL42249A IL42249A (en) | 1973-05-11 | 1973-05-11 | Process of producing films of silicon dioxide and silicon carbide and method of making semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL42249A IL42249A (en) | 1973-05-11 | 1973-05-11 | Process of producing films of silicon dioxide and silicon carbide and method of making semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL42249A0 IL42249A0 (en) | 1973-07-30 |
| IL42249A true IL42249A (en) | 1976-07-30 |
Family
ID=11047120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL42249A IL42249A (en) | 1973-05-11 | 1973-05-11 | Process of producing films of silicon dioxide and silicon carbide and method of making semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| IL (1) | IL42249A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0387403A1 (en) * | 1988-10-27 | 1990-09-19 | Air Products And Chemicals, Inc. | Deposition of silicon oxide films using alkylsilane liquid sources |
-
1973
- 1973-05-11 IL IL42249A patent/IL42249A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0387403A1 (en) * | 1988-10-27 | 1990-09-19 | Air Products And Chemicals, Inc. | Deposition of silicon oxide films using alkylsilane liquid sources |
Also Published As
| Publication number | Publication date |
|---|---|
| IL42249A0 (en) | 1973-07-30 |
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