DE68909008D1 - Lasermikrostrahlmaschine zur Intervention auf Gegenstände mit dünnen Schichten, besonders zum Ätzen oder zur chemischen Absetzung von Stoff in Anwesenheit eines reaktiven Gases. - Google Patents

Lasermikrostrahlmaschine zur Intervention auf Gegenstände mit dünnen Schichten, besonders zum Ätzen oder zur chemischen Absetzung von Stoff in Anwesenheit eines reaktiven Gases.

Info

Publication number
DE68909008D1
DE68909008D1 DE89403238T DE68909008T DE68909008D1 DE 68909008 D1 DE68909008 D1 DE 68909008D1 DE 89403238 T DE89403238 T DE 89403238T DE 68909008 T DE68909008 T DE 68909008T DE 68909008 D1 DE68909008 D1 DE 68909008D1
Authority
DE
Germany
Prior art keywords
intervention
etching
substances
objects
reactive gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89403238T
Other languages
English (en)
Other versions
DE68909008T2 (de
Inventor
Geoffroy Auvert
Jean-Claude Georgel
Yves Guern
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Publication of DE68909008D1 publication Critical patent/DE68909008D1/de
Application granted granted Critical
Publication of DE68909008T2 publication Critical patent/DE68909008T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/123—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/126—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of gases chemically reacting with the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Microscoopes, Condenser (AREA)
DE89403238T 1988-11-25 1989-11-23 Lasermikrostrahlmaschine zur Intervention auf Gegenstände mit dünnen Schichten, besonders zum Ätzen oder zur chemischen Absetzung von Stoff in Anwesenheit eines reaktiven Gases. Expired - Fee Related DE68909008T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8815435A FR2639567B1 (fr) 1988-11-25 1988-11-25 Machine a microfaisceau laser d'intervention sur des objets a couche mince, en particulier pour la gravure ou le depot de matiere par voie chimique en presence d'un gaz reactif

Publications (2)

Publication Number Publication Date
DE68909008D1 true DE68909008D1 (de) 1993-10-14
DE68909008T2 DE68909008T2 (de) 1994-04-28

Family

ID=9372261

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89403238T Expired - Fee Related DE68909008T2 (de) 1988-11-25 1989-11-23 Lasermikrostrahlmaschine zur Intervention auf Gegenstände mit dünnen Schichten, besonders zum Ätzen oder zur chemischen Absetzung von Stoff in Anwesenheit eines reaktiven Gases.

Country Status (10)

Country Link
US (1) US4964940A (de)
EP (1) EP0370912B1 (de)
JP (1) JPH03503551A (de)
KR (1) KR900701460A (de)
CA (1) CA2003847A1 (de)
DE (1) DE68909008T2 (de)
ES (1) ES2049343T3 (de)
FR (1) FR2639567B1 (de)
IL (1) IL92446A (de)
WO (1) WO1990006206A1 (de)

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US5171963A (en) * 1990-05-21 1992-12-15 Ntn Corporation Laser processing device and laser processing method
JPH0464234A (ja) * 1990-07-04 1992-02-28 Mitsubishi Electric Corp 配線パターンの形成方法
US5106455A (en) * 1991-01-28 1992-04-21 Sarcos Group Method and apparatus for fabrication of micro-structures using non-planar, exposure beam lithography
US5129994A (en) * 1991-04-23 1992-07-14 Applied Materials, Inc. Method and apparatus to inhibit obstruction of optical transmission through semiconductor etch process chamber viewport
FR2678194B1 (fr) * 1991-06-27 1995-10-27 Bertin & Cie Procede de formation de lignes metalliques conductrices de faible largeur sur un substrat dielectrique.
US5174826A (en) * 1991-12-06 1992-12-29 General Electric Company Laser-assisted chemical vapor deposition
FR2685127B1 (fr) * 1991-12-13 1994-02-04 Christian Licoppe Photonanographe a gaz pour la fabrication et l'analyse optique de motifs a l'echelle nanometrique.
US5376224A (en) * 1992-02-27 1994-12-27 Hughes Aircraft Company Method and apparatus for non-contact plasma polishing and smoothing of uniformly thinned substrates
US5238532A (en) * 1992-02-27 1993-08-24 Hughes Aircraft Company Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching
US5292400A (en) * 1992-03-23 1994-03-08 Hughes Aircraft Company Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching
IL105925A (en) * 1992-06-22 1997-01-10 Martin Marietta Corp Ablative process for printed circuit board technology
JPH06350153A (ja) * 1993-06-10 1994-12-22 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center 超電導デバイスの製造方法
JPH11167730A (ja) * 1997-12-02 1999-06-22 Toshiba Corp 光ディスク原盤記録装置および光ディスク原盤記録方法
US6063200A (en) * 1998-02-10 2000-05-16 Sarcos L.C. Three-dimensional micro fabrication device for filamentary substrates
US6057871A (en) * 1998-07-10 2000-05-02 Litton Systems, Inc. Laser marking system and associated microlaser apparatus
JP4689064B2 (ja) * 2000-03-30 2011-05-25 キヤノン株式会社 露光装置およびデバイス製造方法
WO2002080859A2 (en) * 2001-03-20 2002-10-17 Glaxo Group Limited Inhalation drug combinations
US20040261712A1 (en) * 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
US7223674B2 (en) * 2004-05-06 2007-05-29 Micron Technology, Inc. Methods for forming backside alignment markers useable in semiconductor lithography
DE102007062211A1 (de) 2007-12-21 2009-06-25 Linde Ag Verfahren und Vorrichtung zum Laser-Remote-Schweißen
DE102007062212A1 (de) 2007-12-21 2009-06-25 Linde Ag Verfahren und Vorrichtung zum Laser-Remote-Schneiden
JP5552276B2 (ja) * 2008-08-01 2014-07-16 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
DE102009006932A1 (de) * 2009-01-30 2010-08-19 Centrotherm Thermal Solutions Gmbh + Co. Kg Anordnung und Verfahren zum gasdichten Versiegeln von OLED-Bauelementen
US8524139B2 (en) * 2009-08-10 2013-09-03 FEI Compay Gas-assisted laser ablation
KR101813662B1 (ko) * 2011-10-05 2017-12-29 어플라이드 머티어리얼스, 인코포레이티드 레이저 프로세싱 시스템들 내의 입자 제어
CN103521920B (zh) * 2013-10-16 2015-09-30 江苏大学 一种无需吹送辅助气体的激光加工装置及方法
DE102015206237B4 (de) * 2015-04-08 2017-04-13 Felsomat Gmbh & Co Kg Verfahren zum Vakuum-Laserschweißen eines wenigstens zweiteiligen Werkstücks
US10507546B2 (en) * 2017-03-16 2019-12-17 Xerox Corporation Laser cutting debris collection system
US11890807B1 (en) 2017-08-31 2024-02-06 Blue Origin, Llc Systems and methods for controlling additive manufacturing processes
US11819943B1 (en) * 2019-03-28 2023-11-21 Blue Origin Llc Laser material fusion under vacuum, and associated systems and methods
FR3096678B1 (fr) * 2019-05-27 2021-05-21 Safran Ceram Procede de reparation d’une piece en cmc et dispositif
US20220305584A1 (en) * 2021-03-24 2022-09-29 Fei Company In-situ laser redeposition reduction by a controlled gas flow and a system for reducing contamination
CN113385817B (zh) * 2021-08-17 2021-12-10 国宏激光科技(江苏)有限公司 一种真空激光焊接装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1814888A1 (de) * 1968-12-16 1970-07-16 Inst Plasmaphysik Gmbh Verfahren und Einrichtung zum Herstellen einer duennen,freitragenden Scheibe im Hochvakuum aus bei Raumtemperatur gasfoermigem Material,wie Wasserstoff
US4340617A (en) * 1980-05-19 1982-07-20 Massachusetts Institute Of Technology Method and apparatus for depositing a material on a surface
JPS59126774A (ja) * 1983-01-10 1984-07-21 Nec Corp 気相金属堆積装置
EP0268301B1 (de) * 1986-11-20 1993-09-15 Nec Corporation Verfahren und Vorrichtung um eine Linie auf einem strukturierten Substrat zu schreiben
FR2608484B1 (fr) * 1986-12-23 1989-04-28 Bertin & Cie Machine a microfaisceau laser d'intervention sur des objets a couches minces de materiau
US4801352A (en) * 1986-12-30 1989-01-31 Image Micro Systems, Inc. Flowing gas seal enclosure for processing workpiece surface with controlled gas environment and intense laser irradiation
JP2545897B2 (ja) * 1987-12-11 1996-10-23 日本電気株式会社 光ｃｖｄ装置

Also Published As

Publication number Publication date
IL92446A (en) 1994-04-12
US4964940A (en) 1990-10-23
KR900701460A (ko) 1990-12-03
JPH03503551A (ja) 1991-08-08
WO1990006206A1 (fr) 1990-06-14
IL92446A0 (en) 1990-08-31
ES2049343T3 (es) 1994-04-16
EP0370912A1 (de) 1990-05-30
FR2639567A1 (fr) 1990-06-01
CA2003847A1 (fr) 1990-05-25
EP0370912B1 (de) 1993-09-08
DE68909008T2 (de) 1994-04-28
FR2639567B1 (fr) 1991-01-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee