DE60335208D1 - Elektrisches bauelement mit einer schicht aus phasenwechsel-material und verfahren zur seiner herstellung - Google Patents

Elektrisches bauelement mit einer schicht aus phasenwechsel-material und verfahren zur seiner herstellung

Info

Publication number
DE60335208D1
DE60335208D1 DE60335208T DE60335208T DE60335208D1 DE 60335208 D1 DE60335208 D1 DE 60335208D1 DE 60335208 T DE60335208 T DE 60335208T DE 60335208 T DE60335208 T DE 60335208T DE 60335208 D1 DE60335208 D1 DE 60335208D1
Authority
DE
Germany
Prior art keywords
phase
contact area
change material
production
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335208T
Other languages
English (en)
Inventor
Martijn H Lankhorst
Franciscus P Widdershoven
Robertus A Wolters
Wilhelmus S Ketelaars
Erwin R Meinders
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60335208D1 publication Critical patent/DE60335208D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/068—Patterning of the switching material by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
DE60335208T 2002-12-19 2003-12-05 Elektrisches bauelement mit einer schicht aus phasenwechsel-material und verfahren zur seiner herstellung Expired - Lifetime DE60335208D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP02080430 2002-12-19
EP03100583 2003-03-07
EP03103338 2003-09-10
PCT/IB2003/005734 WO2004057618A2 (en) 2002-12-19 2003-12-05 Electric device comprising a layer of phase change material and method of manufacturing the same

Publications (1)

Publication Number Publication Date
DE60335208D1 true DE60335208D1 (de) 2011-01-13

Family

ID=32685711

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335208T Expired - Lifetime DE60335208D1 (de) 2002-12-19 2003-12-05 Elektrisches bauelement mit einer schicht aus phasenwechsel-material und verfahren zur seiner herstellung

Country Status (9)

Country Link
US (1) US7119353B2 (de)
EP (1) EP1576677B1 (de)
JP (1) JP2006511972A (de)
KR (1) KR20050093782A (de)
AT (1) ATE490562T1 (de)
AU (1) AU2003283730A1 (de)
DE (1) DE60335208D1 (de)
TW (1) TW200425555A (de)
WO (1) WO2004057618A2 (de)

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KR20050092017A (ko) 2002-12-19 2005-09-16 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 위상 변경 물질을 포함하는 전기 디바이스와 이를 포함하는장치
US7893419B2 (en) 2003-08-04 2011-02-22 Intel Corporation Processing phase change material to improve programming speed
DE20321085U1 (de) 2003-10-23 2005-12-29 Commissariat à l'Energie Atomique Phasenwechselspeicher, Phasenwechselspeicheranordnung, Phasenwechselspeicherzelle, 2D-Phasenwechselspeicherzellen-Array, 3D-Phasenwechselspeicherzellen-Array und Elektronikbaustein
US7858980B2 (en) * 2004-03-01 2010-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Reduced active area in a phase change memory structure
US7700934B2 (en) * 2004-09-27 2010-04-20 Koninklijke Philips Electronics N.V. Electric device with nanowires comprising a phase change material
DE602005024840D1 (de) 2004-09-30 2010-12-30 Nxp Bv Integrierte schaltung mit speicherzellen mit einem programmierbaren widerstand und verfahren zum adressieren von speicherzellen mit einem programmierbaren widerstand
KR20070067150A (ko) 2004-10-21 2007-06-27 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 집적 회로 및 메모리 셀 어드레싱 방법
JP4664688B2 (ja) * 2005-01-14 2011-04-06 東芝メモリシステムズ株式会社 工業製品の製造方法
WO2006079952A1 (en) * 2005-01-25 2006-08-03 Nxp B.V. Fabrication of phase-change resistor using a backend process
JP2006303294A (ja) * 2005-04-22 2006-11-02 Renesas Technology Corp 相変化型不揮発性メモリ及びその製造方法
JP4889960B2 (ja) * 2005-04-26 2012-03-07 株式会社半導体エネルギー研究所 半導体装置
JP2006351992A (ja) * 2005-06-20 2006-12-28 Renesas Technology Corp 半導体記憶装置及びその製造方法
US7541607B2 (en) * 2005-11-02 2009-06-02 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
KR100655082B1 (ko) * 2005-12-23 2006-12-08 삼성전자주식회사 상변화 메모리 소자 및 그 제조방법
US7339230B2 (en) * 2006-01-09 2008-03-04 International Business Machines Corporation Structure and method for making high density mosfet circuits with different height contact lines
KR20090007363A (ko) 2006-03-24 2009-01-16 엔엑스피 비 브이 상변화 저항기를 갖는 전기 디바이스 및 전기 장치
US7646006B2 (en) * 2006-03-30 2010-01-12 International Business Machines Corporation Three-terminal cascade switch for controlling static power consumption in integrated circuits
US7545667B2 (en) * 2006-03-30 2009-06-09 International Business Machines Corporation Programmable via structure for three dimensional integration technology
US7767994B2 (en) * 2006-12-05 2010-08-03 Electronics And Telecommunications Research Institute Phase-change random access memory device and method of manufacturing the same
KR101166834B1 (ko) * 2007-06-20 2012-07-19 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 전자 부품 및 그 제조 방법
EP2162887B1 (de) 2007-06-28 2018-09-19 Nxp B.V. Elektrische vorrichtung mit phasenwechselmaterial und heizstruktur
JP2009010264A (ja) * 2007-06-29 2009-01-15 Toshiba Corp 抵抗変化メモリ装置及び集積回路装置
US7678606B2 (en) 2007-09-04 2010-03-16 Industrial Technology Research Institute Phase change memory device and fabrication method thereof
JP5334995B2 (ja) 2008-01-16 2013-11-06 エヌエックスピー ビー ヴィ 相変化材料層を有する多層構造およびその製造方法
US8426838B2 (en) 2008-01-25 2013-04-23 Higgs Opl. Capital Llc Phase-change memory
TW200943595A (en) 2008-04-03 2009-10-16 Ind Tech Res Inst Phase change memory and method for fabricating the same
US8604457B2 (en) * 2008-11-12 2013-12-10 Higgs Opl. Capital Llc Phase-change memory element
KR100993052B1 (ko) 2009-03-05 2010-11-08 광주과학기술원 3차원 구조를 갖는 저항 변화 메모리 소자, 저항 변화 메모리 소자 어레이, 전자제품 및 상기 소자 제조방법
US8470635B2 (en) 2009-11-30 2013-06-25 Micron Technology, Inc. Keyhole-free sloped heater for phase change memory
US9293197B2 (en) 2011-08-15 2016-03-22 Lockheed Martin Corporation Reconfigurable phase change material masks for electro-optical compressive sensing
US8637847B2 (en) 2011-12-09 2014-01-28 Micron Technology, Inc. Memory cells having a plurality of heaters
US9340446B1 (en) 2013-02-04 2016-05-17 Lockheed Martin Corporation Optical apparatus and method of forming a gradient index device
US10437083B1 (en) 2014-10-20 2019-10-08 Lockheed Martin Corporation Individually addressable infrared mask array
US9969647B2 (en) 2016-05-17 2018-05-15 Lockheed Martin Energy, Llc Glass composites having a gradient index of refraction and methods for production thereof
US9908808B1 (en) 2016-08-18 2018-03-06 Lockheed Martin Corporation Ternary glass materials with low refractive index variability
FR3115932A1 (fr) * 2020-10-29 2022-05-06 Stmicroelectronics (Crolles 2) Sas Mémoire à changement de phase

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US6563156B2 (en) * 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US6770531B2 (en) * 2001-06-30 2004-08-03 Intel Corporation Adhesive material for programmable device
US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
US6764894B2 (en) * 2001-08-31 2004-07-20 Ovonyx, Inc. Elevated pore phase-change memory
US6545287B2 (en) * 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
US6815818B2 (en) * 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6972430B2 (en) * 2002-02-20 2005-12-06 Stmicroelectronics S.R.L. Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
US6870751B2 (en) * 2002-11-07 2005-03-22 Hewlett-Packard Development Company, L.P. Low-energy writing in cross-point array memory devices

Also Published As

Publication number Publication date
EP1576677A2 (de) 2005-09-21
EP1576677B1 (de) 2010-12-01
WO2004057618A2 (en) 2004-07-08
AU2003283730A1 (en) 2004-07-14
TW200425555A (en) 2004-11-16
JP2006511972A (ja) 2006-04-06
US20060017076A1 (en) 2006-01-26
US7119353B2 (en) 2006-10-10
KR20050093782A (ko) 2005-09-23
ATE490562T1 (de) 2010-12-15
WO2004057618A3 (en) 2004-11-11
AU2003283730A8 (en) 2004-07-14

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