ATE497260T1 - Dielektrische antifuse für eine elektrothermisch programmierbare vorrichtung - Google Patents

Dielektrische antifuse für eine elektrothermisch programmierbare vorrichtung

Info

Publication number
ATE497260T1
ATE497260T1 AT05819584T AT05819584T ATE497260T1 AT E497260 T1 ATE497260 T1 AT E497260T1 AT 05819584 T AT05819584 T AT 05819584T AT 05819584 T AT05819584 T AT 05819584T AT E497260 T1 ATE497260 T1 AT E497260T1
Authority
AT
Austria
Prior art keywords
programmable
dielectric
small
electrothermally
programmable device
Prior art date
Application number
AT05819584T
Other languages
English (en)
Inventor
Hans Boeve
Karen Attenborough
Godefridus Hurkx
Prabhat Agarwal
Hendrik G Huizing
T Zandt Michael In
Jan Slotboom
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE497260T1 publication Critical patent/ATE497260T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
AT05819584T 2004-11-30 2005-11-24 Dielektrische antifuse für eine elektrothermisch programmierbare vorrichtung ATE497260T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04106181 2004-11-30
PCT/IB2005/053898 WO2006072842A1 (en) 2004-11-30 2005-11-24 Dielectric antifuse for electro-thermally programmable device

Publications (1)

Publication Number Publication Date
ATE497260T1 true ATE497260T1 (de) 2011-02-15

Family

ID=35992435

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05819584T ATE497260T1 (de) 2004-11-30 2005-11-24 Dielektrische antifuse für eine elektrothermisch programmierbare vorrichtung

Country Status (9)

Country Link
US (1) US7660180B2 (de)
EP (1) EP1820226B1 (de)
JP (1) JP2008522400A (de)
KR (1) KR20070085565A (de)
CN (1) CN101069296B (de)
AT (1) ATE497260T1 (de)
DE (1) DE602005026160D1 (de)
TW (1) TW200631157A (de)
WO (1) WO2006072842A1 (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU6531600A (en) 1999-08-27 2001-03-26 Lex Kosowsky Current carrying structure using voltage switchable dielectric material
US20100044080A1 (en) * 1999-08-27 2010-02-25 Lex Kosowsky Metal Deposition
US20100038121A1 (en) * 1999-08-27 2010-02-18 Lex Kosowsky Metal Deposition
US20100038119A1 (en) * 1999-08-27 2010-02-18 Lex Kosowsky Metal Deposition
US20100044079A1 (en) * 1999-08-27 2010-02-25 Lex Kosowsky Metal Deposition
JP2006156886A (ja) * 2004-12-01 2006-06-15 Renesas Technology Corp 半導体集積回路装置およびその製造方法
TW200633193A (en) 2004-12-02 2006-09-16 Koninkl Philips Electronics Nv Non-volatile memory
US8653495B2 (en) 2005-04-11 2014-02-18 Micron Technology, Inc. Heating phase change material
JP2006352082A (ja) * 2005-05-19 2006-12-28 Renesas Technology Corp 半導体記憶装置及びその製造方法
KR20080084812A (ko) 2005-11-22 2008-09-19 쇼킹 테크놀로지스 인코포레이티드 과전압 보호를 위해 전압 변환가능 재료를 포함하는 반도체디바이스
JP5143415B2 (ja) * 2006-01-02 2013-02-13 三星電子株式会社 マルチビットセル及び直径が調節できるコンタクトを具備する相変化記憶素子、その製造方法及びそのプログラム方法
KR100695166B1 (ko) * 2006-01-03 2007-03-14 삼성전자주식회사 플러렌층을 구비한 상변화 메모리 소자의 제조 방법
KR100745761B1 (ko) * 2006-02-07 2007-08-02 삼성전자주식회사 다이오드겸용 저항소자를 구비하는 상변화 램과 그 제조 및동작 방법
EP2084748A4 (de) 2006-09-24 2011-09-28 Shocking Technologies Inc Formulierungen für ein spannungsumschaltbares dielektrisches material mit einem abgestuften spannungsansprechverhalten und herstellungsverfahren dafür
KR100780964B1 (ko) * 2006-11-13 2007-12-03 삼성전자주식회사 셀 다이오드를 구비하는 상변화 메모리 소자 및 그의제조방법
JP5160142B2 (ja) * 2007-05-17 2013-03-13 ルネサスエレクトロニクス株式会社 Ｏｔｐメモリセル及びｏｔｐメモリ
WO2009066204A1 (en) 2007-11-22 2009-05-28 Nxp B.V. Charge carrier stream generating electronic device and method
JP2009164458A (ja) * 2008-01-09 2009-07-23 Renesas Technology Corp 相変化メモリ
US7760542B2 (en) * 2008-04-21 2010-07-20 Seagate Technology Llc Spin-torque memory with unidirectional write scheme
US7974119B2 (en) 2008-07-10 2011-07-05 Seagate Technology Llc Transmission gate-based spin-transfer torque memory unit
US8233319B2 (en) * 2008-07-18 2012-07-31 Seagate Technology Llc Unipolar spin-transfer switching memory unit
US7933146B2 (en) * 2008-10-08 2011-04-26 Seagate Technology Llc Electronic devices utilizing spin torque transfer to flip magnetic orientation
US7933137B2 (en) * 2008-10-08 2011-04-26 Seagate Teachnology Llc Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures
US20100091546A1 (en) * 2008-10-15 2010-04-15 Seagate Technology Llc High density reconfigurable spin torque non-volatile memory
US9030867B2 (en) * 2008-10-20 2015-05-12 Seagate Technology Llc Bipolar CMOS select device for resistive sense memory
US7936580B2 (en) * 2008-10-20 2011-05-03 Seagate Technology Llc MRAM diode array and access method
US7936583B2 (en) * 2008-10-30 2011-05-03 Seagate Technology Llc Variable resistive memory punchthrough access method
US7825478B2 (en) 2008-11-07 2010-11-02 Seagate Technology Llc Polarity dependent switch for resistive sense memory
US8178864B2 (en) 2008-11-18 2012-05-15 Seagate Technology Llc Asymmetric barrier diode
US8203869B2 (en) 2008-12-02 2012-06-19 Seagate Technology Llc Bit line charge accumulation sensing for resistive changing memory
US8272123B2 (en) 2009-01-27 2012-09-25 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US9226391B2 (en) 2009-01-27 2015-12-29 Littelfuse, Inc. Substrates having voltage switchable dielectric materials
US8399773B2 (en) 2009-01-27 2013-03-19 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
KR101679099B1 (ko) 2009-03-26 2016-11-23 쇼킹 테크놀로지스 인코포레이티드 전압 스위칭형 유전 물질을 갖는 소자
US8159856B2 (en) 2009-07-07 2012-04-17 Seagate Technology Llc Bipolar select device for resistive sense memory
US8158964B2 (en) 2009-07-13 2012-04-17 Seagate Technology Llc Schottky diode switch and memory units containing the same
JP5467537B2 (ja) * 2009-07-22 2014-04-09 株式会社村田製作所 アンチヒューズ素子
TWI426332B (zh) * 2009-12-31 2014-02-11 Chi Lin Optoelectronics Co Ltd 背光模組及其光學板
US9224728B2 (en) 2010-02-26 2015-12-29 Littelfuse, Inc. Embedded protection against spurious electrical events
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components
US9082622B2 (en) 2010-02-26 2015-07-14 Littelfuse, Inc. Circuit elements comprising ferroic materials
US8462575B2 (en) * 2010-07-14 2013-06-11 Broadcom Corporation Multi-time programmable memory
US8648426B2 (en) 2010-12-17 2014-02-11 Seagate Technology Llc Tunneling transistors
US8605495B2 (en) 2011-05-09 2013-12-10 Macronix International Co., Ltd. Isolation device free memory
US9257197B2 (en) 2012-07-06 2016-02-09 Micron Technology, Inc. Apparatuses and/or methods for operating a memory cell as an anti-fuse
US9093149B2 (en) * 2012-09-04 2015-07-28 Qualcomm Incorporated Low cost programmable multi-state device
US9224950B2 (en) * 2013-12-27 2015-12-29 Intermolecular, Inc. Methods, systems, and apparatus for improving thin film resistor reliability
WO2016113829A1 (ja) * 2015-01-13 2016-07-21 株式会社日立製作所 半導体記憶装置
US9793207B1 (en) 2016-07-20 2017-10-17 International Business Machines Corporation Electrical antifuse including phase change material
US9735103B1 (en) 2016-07-20 2017-08-15 International Business Machines Corporation Electrical antifuse having airgap or solid core
US10461125B2 (en) 2017-08-29 2019-10-29 Micron Technology, Inc. Three dimensional memory arrays
US11997932B2 (en) * 2021-03-31 2024-05-28 Crossbar, Inc. Resistive switching memory having confined filament formation and methods thereof
US20230284541A1 (en) * 2022-03-02 2023-09-07 International Business Machines Corporation Phase change memory cell with double active volume

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US197947A (en) * 1877-12-11 Improvement in oil-cans
US11374A (en) * 1854-07-25 Bank-lock
US158950A (en) * 1875-01-19 Improvement in hog-traps
US5502315A (en) * 1989-09-07 1996-03-26 Quicklogic Corporation Electrically programmable interconnect structure having a PECVD amorphous silicon element
US5166758A (en) * 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5641703A (en) * 1991-07-25 1997-06-24 Massachusetts Institute Of Technology Voltage programmable links for integrated circuits
US5904507A (en) * 1998-02-23 1999-05-18 National Semiconductor Corporation Programmable anti-fuses using laser writing
US7173317B1 (en) * 1998-11-09 2007-02-06 Micron Technology, Inc. Electrical and thermal contact for use in semiconductor devices
US6075719A (en) * 1999-06-22 2000-06-13 Energy Conversion Devices, Inc. Method of programming phase-change memory element
US20020011374A1 (en) 2000-03-24 2002-01-31 Charles Brister Small motorized cart and brush cage apparatus
US6613604B2 (en) 2001-08-02 2003-09-02 Ovonyx, Inc. Method for making small pore for use in programmable resistance memory element
US6559516B1 (en) * 2002-01-16 2003-05-06 Hewlett-Packard Development Company Antifuse structure and method of making
US20050158950A1 (en) 2002-12-19 2005-07-21 Matrix Semiconductor, Inc. Non-volatile memory cell comprising a dielectric layer and a phase change material in series
US20040197947A1 (en) 2003-04-07 2004-10-07 Fricke Peter J. Memory-cell filament electrodes and methods
US7180123B2 (en) * 2003-07-21 2007-02-20 Macronix International Co., Ltd. Method for programming programmable eraseless memory

Also Published As

Publication number Publication date
US7660180B2 (en) 2010-02-09
JP2008522400A (ja) 2008-06-26
WO2006072842A1 (en) 2006-07-13
KR20070085565A (ko) 2007-08-27
CN101069296A (zh) 2007-11-07
CN101069296B (zh) 2010-10-13
DE602005026160D1 (de) 2011-03-10
EP1820226A1 (de) 2007-08-22
EP1820226B1 (de) 2011-01-26
US20080144355A1 (en) 2008-06-19
TW200631157A (en) 2006-09-01

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