DE60326421D1 - Automatische Kalibrierung eines Maskensimulators - Google Patents

Automatische Kalibrierung eines Maskensimulators

Info

Publication number
DE60326421D1
DE60326421D1 DE60326421T DE60326421T DE60326421D1 DE 60326421 D1 DE60326421 D1 DE 60326421D1 DE 60326421 T DE60326421 T DE 60326421T DE 60326421 T DE60326421 T DE 60326421T DE 60326421 D1 DE60326421 D1 DE 60326421D1
Authority
DE
Germany
Prior art keywords
automatic calibration
simulator
mask
mask simulator
calibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60326421T
Other languages
English (en)
Inventor
Lav D Ivanovic
Paul G Filseth
Mario Garza
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LSI Corp
Original Assignee
LSI Logic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LSI Logic Corp filed Critical LSI Logic Corp
Application granted granted Critical
Publication of DE60326421D1 publication Critical patent/DE60326421D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE60326421T 2002-11-26 2003-10-31 Automatische Kalibrierung eines Maskensimulators Expired - Lifetime DE60326421D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/305,673 US6768958B2 (en) 2002-11-26 2002-11-26 Automatic calibration of a masking process simulator

Publications (1)

Publication Number Publication Date
DE60326421D1 true DE60326421D1 (de) 2009-04-16

Family

ID=32298061

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60326421T Expired - Lifetime DE60326421D1 (de) 2002-11-26 2003-10-31 Automatische Kalibrierung eines Maskensimulators

Country Status (4)

Country Link
US (2) US6768958B2 (de)
EP (1) EP1424595B1 (de)
JP (1) JP2004177961A (de)
DE (1) DE60326421D1 (de)

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US6768958B2 (en) * 2002-11-26 2004-07-27 Lsi Logic Corporation Automatic calibration of a masking process simulator
JP4276140B2 (ja) * 2004-06-25 2009-06-10 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及び寸法校正用試料
KR20070114269A (ko) * 2005-02-02 2007-11-30 코닌클리케 필립스 일렉트로닉스 엔.브이. 교정을 위한 방법, 장치, 디바이스, 시스템 및 프로그램
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US7848561B2 (en) * 2005-12-30 2010-12-07 Honeywell International Inc. Determining capability of an on-line sensor
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KR100819094B1 (ko) * 2006-10-26 2008-04-02 삼성전자주식회사 반도체 메모리 디바이스 제조를 위한 글로벌 매칭 방법
JP5408852B2 (ja) * 2007-08-09 2014-02-05 株式会社日立ハイテクノロジーズ パターン測定装置
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DE102008015631A1 (de) * 2008-03-20 2009-09-24 Carl Zeiss Sms Gmbh Verfahren und Vorrichtung zur Vermessung von Masken für die Photolithographie
DE102008015806B4 (de) * 2008-03-27 2015-07-16 Infineon Technologies Ag Verfahren zum Kalibrieren eines Simulations- oder Entwurfsverfahrens, zum Entwerfen oder Herstellen einer Maske oder zum Herstellen eines Bauelements
US8676818B2 (en) * 2010-05-03 2014-03-18 International Business Machines Corporation Dynamic storage and retrieval of process graphs representative of business processes and extraction of formal process models therefrom
DE102010045135B4 (de) * 2010-09-10 2021-03-18 Carl Zeiss Meditec Ag Verfahren zur Ermittlung eines Platzierungsfehlers eines Strukturelements auf einer Maske, Verfahren zur Simulation eines Luftbildes aus Struktur-Vorgaben einer Maske und Positionsmessvorrichtung
CN102122111B (zh) * 2011-03-20 2012-11-14 北京理工大学 一种基于像素的光学邻近效应校正的优化方法
US8810785B2 (en) * 2011-08-26 2014-08-19 United Microelectronics Corp. Mask inspecting method
US8885917B2 (en) * 2011-12-27 2014-11-11 United Microelectronics Corp. Mask pattern and correcting method thereof
JP5758423B2 (ja) 2013-02-26 2015-08-05 株式会社東芝 マスクレイアウトの作成方法
CN104281008B (zh) * 2013-07-02 2016-08-31 欣兴电子股份有限公司 曝光图像补偿方法
CN107851315B (zh) * 2015-08-10 2020-03-17 科磊股份有限公司 用于预测晶片级缺陷可印性的设备及方法
JP6663672B2 (ja) * 2015-09-25 2020-03-13 株式会社Ｓｃｒｅｅｎホールディングス データ補正装置、描画装置、配線パターン形成システム、検査装置、データ補正方法および配線基板の製造方法
US11029609B2 (en) 2016-12-28 2021-06-08 Asml Netherlands B.V. Simulation-assisted alignment between metrology image and design

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Also Published As

Publication number Publication date
US6868355B2 (en) 2005-03-15
EP1424595A3 (de) 2004-12-29
US6768958B2 (en) 2004-07-27
EP1424595B1 (de) 2009-03-04
US20040199349A1 (en) 2004-10-07
US20040102912A1 (en) 2004-05-27
JP2004177961A (ja) 2004-06-24
EP1424595A2 (de) 2004-06-02

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