DE60315290D1 - Ferroelektrische speicheranordnung mit verbesserter ausfallsicherheit und hoeherer speicherdichte - Google Patents

Ferroelektrische speicheranordnung mit verbesserter ausfallsicherheit und hoeherer speicherdichte

Info

Publication number
DE60315290D1
DE60315290D1 DE60315290T DE60315290T DE60315290D1 DE 60315290 D1 DE60315290 D1 DE 60315290D1 DE 60315290 T DE60315290 T DE 60315290T DE 60315290 T DE60315290 T DE 60315290T DE 60315290 D1 DE60315290 D1 DE 60315290D1
Authority
DE
Germany
Prior art keywords
improved safety
ferroelectric
density
storage
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60315290T
Other languages
English (en)
Other versions
DE60315290T2 (de
Inventor
Michael Jacob
Uwe Wellhausen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Qimonda AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qimonda AG filed Critical Qimonda AG
Publication of DE60315290D1 publication Critical patent/DE60315290D1/de
Application granted granted Critical
Publication of DE60315290T2 publication Critical patent/DE60315290T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/40—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
DE60315290T 2002-06-04 2003-06-04 Ferroelektrische speicheranordnung mit verbesserter ausfallsicherheit und hoeherer speicherdichte Expired - Lifetime DE60315290T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US161908 1988-02-29
US10/161,908 US6858890B2 (en) 2002-06-04 2002-06-04 Ferroelectric memory integrated circuit with improved reliability
PCT/EP2003/005858 WO2003102957A1 (en) 2002-06-04 2003-06-04 Ferroelectric memory integrated circuit with improved reliabilityand density

Publications (2)

Publication Number Publication Date
DE60315290D1 true DE60315290D1 (de) 2007-09-13
DE60315290T2 DE60315290T2 (de) 2008-04-17

Family

ID=29583508

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60315290T Expired - Lifetime DE60315290T2 (de) 2002-06-04 2003-06-04 Ferroelektrische speicheranordnung mit verbesserter ausfallsicherheit und hoeherer speicherdichte

Country Status (8)

Country Link
US (1) US6858890B2 (de)
EP (1) EP1509923B1 (de)
JP (1) JP2005528788A (de)
KR (1) KR100644999B1 (de)
CN (1) CN100562941C (de)
DE (1) DE60315290T2 (de)
TW (1) TWI244754B (de)
WO (1) WO2003102957A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7476945B2 (en) * 2004-03-17 2009-01-13 Sanyo Electric Co., Ltd. Memory having reduced memory cell size
DE102005042071B4 (de) * 2005-08-31 2007-11-08 Infineon Technologies Ag Verfahren zum Herstellen einer Halbleiterstruktur
JP4301227B2 (ja) * 2005-09-15 2009-07-22 セイコーエプソン株式会社 電気光学装置及びその製造方法、電子機器並びにコンデンサー
US8130527B2 (en) 2008-09-11 2012-03-06 Micron Technology, Inc. Stacked device identification assignment
DE102010024206B4 (de) * 2009-07-08 2015-08-20 Sumitomo Wiring Systems, Ltd. Verbinder und Steckverbindung mit Verbinder
CN102136465B (zh) * 2010-01-27 2013-04-10 中芯国际集成电路制造(上海)有限公司 微电容mos变容管和变容二极管的开路去嵌测试结构
US9768181B2 (en) * 2014-04-28 2017-09-19 Micron Technology, Inc. Ferroelectric memory and methods of forming the same
US10038092B1 (en) * 2017-05-24 2018-07-31 Sandisk Technologies Llc Three-level ferroelectric memory cell using band alignment engineering
US10748986B2 (en) * 2017-11-21 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with capacitors
US10818666B2 (en) 2019-03-04 2020-10-27 Micron Technology, Inc. Gate noble metal nanoparticles
US11296147B2 (en) * 2019-05-16 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing memory device having spacer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0513894B1 (de) 1991-05-08 1996-08-28 Koninklijke Philips Electronics N.V. Verfahren zur Herstellung einer Halbleiteranordnung mit einem Kondensator mit einem ferroelektrischen Dieletrikum und Halbleiteranordnung mit einem derartigen Kondensator
US5384287A (en) * 1991-12-13 1995-01-24 Nec Corporation Method of forming a semiconductor device having self-aligned contact holes
US5330931A (en) * 1993-09-22 1994-07-19 Northern Telecom Limited Method of making a capacitor for an integrated circuit
US5902131A (en) 1997-05-09 1999-05-11 Ramtron International Corporation Dual-level metalization method for integrated circuit ferroelectric devices
KR100247934B1 (ko) * 1997-10-07 2000-03-15 윤종용 강유전체 램 장치 및 그 제조방법
JP2000031398A (ja) * 1998-07-15 2000-01-28 Toshiba Corp 半導体装置及びその製造方法
JP2000150810A (ja) * 1998-11-17 2000-05-30 Toshiba Microelectronics Corp 半導体装置及びその製造方法
US6242299B1 (en) 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode

Also Published As

Publication number Publication date
US20030222279A1 (en) 2003-12-04
TW200401439A (en) 2004-01-16
CN100562941C (zh) 2009-11-25
US6858890B2 (en) 2005-02-22
EP1509923A1 (de) 2005-03-02
EP1509923B1 (de) 2007-08-01
TWI244754B (en) 2005-12-01
WO2003102957A1 (en) 2003-12-11
DE60315290T2 (de) 2008-04-17
KR20050010863A (ko) 2005-01-28
JP2005528788A (ja) 2005-09-22
KR100644999B1 (ko) 2006-11-10
CN1659661A (zh) 2005-08-24

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Legal Events

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