DE60307050D1 - Schaltung und verfahren für logische operationen - Google Patents

Schaltung und verfahren für logische operationen

Info

Publication number
DE60307050D1
DE60307050D1 DE60307050T DE60307050T DE60307050D1 DE 60307050 D1 DE60307050 D1 DE 60307050D1 DE 60307050 T DE60307050 T DE 60307050T DE 60307050 T DE60307050 T DE 60307050T DE 60307050 D1 DE60307050 D1 DE 60307050D1
Authority
DE
Germany
Prior art keywords
circuit
logical operations
logical
operations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60307050T
Other languages
English (en)
Other versions
DE60307050T2 (de
Inventor
Michitaka Kameyama
Takahiro Hanyu
Hiromitsu Kimura
Yoshikazu Fujimori
Takashi Nakamura
Hidemi Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE60307050D1 publication Critical patent/DE60307050D1/de
Application granted granted Critical
Publication of DE60307050T2 publication Critical patent/DE60307050T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/185—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using dielectric elements with variable dielectric constant, e.g. ferro-electric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
DE60307050T 2002-01-28 2003-01-22 Schaltung und verfahren für logische operationen Expired - Lifetime DE60307050T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002018662 2002-01-28
JP2002018662 2002-01-28
PCT/JP2003/000569 WO2003065583A1 (en) 2002-01-28 2003-01-22 Logical operation circuit and logical operation method

Publications (2)

Publication Number Publication Date
DE60307050D1 true DE60307050D1 (de) 2006-09-07
DE60307050T2 DE60307050T2 (de) 2007-02-15

Family

ID=27653921

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60307050T Expired - Lifetime DE60307050T2 (de) 2002-01-28 2003-01-22 Schaltung und verfahren für logische operationen

Country Status (7)

Country Link
US (1) US7026841B2 (de)
EP (1) EP1471644B1 (de)
JP (1) JP4105100B2 (de)
CN (1) CN1291552C (de)
DE (1) DE60307050T2 (de)
TW (1) TWI226061B (de)
WO (1) WO2003065583A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4367281B2 (ja) * 2004-08-03 2009-11-18 ソニー株式会社 演算回路
JP2011243716A (ja) * 2010-05-18 2011-12-01 Toshiba Corp スピントランジスタ及び集積回路
US8405421B2 (en) * 2011-06-03 2013-03-26 Alexander Mikhailovich Shukh Nonvolatile full adder circuit
US20160005749A1 (en) * 2014-07-01 2016-01-07 Qualcomm Incorporated Series ferroelectric negative capacitor for multiple time programmable (mtp) devices
JP7123860B2 (ja) * 2019-06-17 2022-08-23 株式会社東芝 演算装置
US10944404B1 (en) * 2019-12-27 2021-03-09 Kepler Computing, Inc. Low power ferroelectric based majority logic gate adder
CN114815958B (zh) * 2022-04-25 2024-05-14 华中科技大学 大容量可级联电光全加/减器芯片

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3457106B2 (ja) * 1995-10-13 2003-10-14 ローム株式会社 スイッチング用半導体素子、プログラム可能な機能装置およびプログラム可能な機能装置の動作方法
US5808929A (en) * 1995-12-06 1998-09-15 Sheikholeslami; Ali Nonvolatile content addressable memory
JPH1117123A (ja) * 1997-06-23 1999-01-22 Rohm Co Ltd 不揮発性記憶素子
US5982683A (en) * 1998-03-23 1999-11-09 Advanced Micro Devices, Inc. Enhanced method of testing semiconductor devices having nonvolatile elements

Also Published As

Publication number Publication date
WO2003065583A1 (en) 2003-08-07
JP4105100B2 (ja) 2008-06-18
DE60307050T2 (de) 2007-02-15
US7026841B2 (en) 2006-04-11
JPWO2003065583A1 (ja) 2005-05-26
TW200303022A (en) 2003-08-16
EP1471644A4 (de) 2005-04-27
EP1471644B1 (de) 2006-07-26
EP1471644A1 (de) 2004-10-27
US20050152198A1 (en) 2005-07-14
CN1291552C (zh) 2006-12-20
CN1625837A (zh) 2005-06-08
TWI226061B (en) 2005-01-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition