DE60306040D1 - Halbleitermodul und Leistungswandlervorrichtung - Google Patents
Halbleitermodul und LeistungswandlervorrichtungInfo
- Publication number
- DE60306040D1 DE60306040D1 DE60306040T DE60306040T DE60306040D1 DE 60306040 D1 DE60306040 D1 DE 60306040D1 DE 60306040 T DE60306040 T DE 60306040T DE 60306040 T DE60306040 T DE 60306040T DE 60306040 D1 DE60306040 D1 DE 60306040D1
- Authority
- DE
- Germany
- Prior art keywords
- power converter
- semiconductor module
- converter device
- semiconductor
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inverter Devices (AREA)
- Combinations Of Printed Boards (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002194078A JP3673776B2 (ja) | 2002-07-03 | 2002-07-03 | 半導体モジュール及び電力変換装置 |
JP2002194078 | 2002-07-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60306040D1 true DE60306040D1 (de) | 2006-07-27 |
DE60306040T2 DE60306040T2 (de) | 2006-12-14 |
Family
ID=29720264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60306040T Expired - Lifetime DE60306040T2 (de) | 2002-07-03 | 2003-07-03 | Halbleitermodul und Leistungswandlervorrichtung |
Country Status (4)
Country | Link |
---|---|
US (2) | US7193317B2 (de) |
EP (1) | EP1378938B1 (de) |
JP (1) | JP3673776B2 (de) |
DE (1) | DE60306040T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6943293B1 (en) * | 2004-09-01 | 2005-09-13 | Delphi Technologies, Inc. | High power electronic package with enhanced cooling characteristics |
JP2006196853A (ja) * | 2004-12-13 | 2006-07-27 | Daikin Ind Ltd | ヒートポンプ装置 |
JP4284625B2 (ja) | 2005-06-22 | 2009-06-24 | 株式会社デンソー | 三相インバータ装置 |
JP4564937B2 (ja) * | 2006-04-27 | 2010-10-20 | 日立オートモティブシステムズ株式会社 | 電気回路装置及び電気回路モジュール並びに電力変換装置 |
JP4580999B2 (ja) * | 2008-03-19 | 2010-11-17 | 日立オートモティブシステムズ株式会社 | モータのコントロールユニット |
JP4661966B2 (ja) * | 2009-03-06 | 2011-03-30 | 株式会社デンソー | 電力変換装置 |
KR20120018811A (ko) * | 2009-05-27 | 2012-03-05 | 쿠라미크 엘렉트로닉스 게엠베하 | 냉각 전기 회로 |
JP5637944B2 (ja) * | 2011-06-29 | 2014-12-10 | 株式会社 日立パワーデバイス | パワー半導体モジュール |
EP2787529B1 (de) * | 2011-11-30 | 2018-05-23 | Mitsubishi Electric Corporation | Halbleitervorrichtung und bordinterne leistungsumwandlungsvorrichtung |
KR101605666B1 (ko) | 2013-02-20 | 2016-03-22 | 미쓰비시덴키 가부시키가이샤 | 냉각 장치 및 이것을 이용한 냉각 장치가 부착된 파워 모듈 |
JP6075128B2 (ja) * | 2013-03-11 | 2017-02-08 | 株式会社ジェイテクト | 駆動回路装置 |
DE102013102707A1 (de) * | 2013-03-18 | 2014-09-18 | Sma Solar Technology Ag | Wechselrichter mit mindestens einer Wechselrichterbrücke zwischen zwei Busbars |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5396403A (en) * | 1993-07-06 | 1995-03-07 | Hewlett-Packard Company | Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate |
JP3022178B2 (ja) | 1994-06-21 | 2000-03-15 | 日産自動車株式会社 | パワーデバイスチップの実装構造 |
US5591789A (en) * | 1995-06-07 | 1997-01-07 | International Business Machines Corporation | Polyester dispersants for high thermal conductivity paste |
JPH0998582A (ja) | 1995-10-03 | 1997-04-08 | Toshiba Corp | 電力変換器 |
JP3879150B2 (ja) | 1996-08-12 | 2007-02-07 | 株式会社デンソー | 半導体装置 |
WO1998043301A1 (en) | 1997-03-26 | 1998-10-01 | Hitachi, Ltd. | Flat semiconductor device and power converter employing the same |
JP2000091485A (ja) | 1998-07-14 | 2000-03-31 | Denso Corp | 半導体装置 |
US6072240A (en) | 1998-10-16 | 2000-06-06 | Denso Corporation | Semiconductor chip package |
FR2786657B1 (fr) | 1998-11-27 | 2001-06-01 | Alstom Technology | Composant electronique de puissance comportant des moyens de refroidissement et procede de fabrication d'un tel composant |
JP2000174180A (ja) | 1998-12-02 | 2000-06-23 | Shibafu Engineering Kk | 半導体装置 |
KR20010090354A (ko) * | 1999-03-26 | 2001-10-18 | 가나이 쓰토무 | 반도체 모듈 및 그 실장 방법 |
US6442033B1 (en) * | 1999-09-24 | 2002-08-27 | Virginia Tech Intellectual Properties, Inc. | Low-cost 3D flip-chip packaging technology for integrated power electronics modules |
DE19950026B4 (de) | 1999-10-09 | 2010-11-11 | Robert Bosch Gmbh | Leistungshalbleitermodul |
JP3525832B2 (ja) | 1999-11-24 | 2004-05-10 | 株式会社デンソー | 半導体装置 |
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
JP2001244391A (ja) | 1999-12-21 | 2001-09-07 | Toyota Central Res & Dev Lab Inc | マルチチップモジュールの冷却構造 |
DE10009171B4 (de) | 2000-02-26 | 2005-08-11 | Robert Bosch Gmbh | Stromrichter und sein Herstellverfahren |
US6916433B2 (en) * | 2000-02-29 | 2005-07-12 | Matsushita Electric Industrial Co., Ltd. | Conductive adhesive, apparatus for mounting electronic component, and method for mounting the same |
JP2002008451A (ja) | 2000-06-23 | 2002-01-11 | Ryoji Mishima | 異方性導電性高分子材 |
-
2002
- 2002-07-03 JP JP2002194078A patent/JP3673776B2/ja not_active Expired - Fee Related
-
2003
- 2003-07-02 US US10/610,816 patent/US7193317B2/en not_active Expired - Lifetime
- 2003-07-03 DE DE60306040T patent/DE60306040T2/de not_active Expired - Lifetime
- 2003-07-03 EP EP03014502A patent/EP1378938B1/de not_active Expired - Fee Related
-
2007
- 2007-02-01 US US11/670,365 patent/US7508068B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040104446A1 (en) | 2004-06-03 |
US20070159864A1 (en) | 2007-07-12 |
US7193317B2 (en) | 2007-03-20 |
US7508068B2 (en) | 2009-03-24 |
EP1378938A3 (de) | 2004-06-16 |
DE60306040T2 (de) | 2006-12-14 |
JP2004040900A (ja) | 2004-02-05 |
JP3673776B2 (ja) | 2005-07-20 |
EP1378938A2 (de) | 2004-01-07 |
EP1378938B1 (de) | 2006-06-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |