DE60304931T2 - Monolithische Mehrwellenlängen Anordnung von Oberflächenemittierenden Lasern mit vertikalem Resonator und Herstellungsverfahren derselben - Google Patents
Monolithische Mehrwellenlängen Anordnung von Oberflächenemittierenden Lasern mit vertikalem Resonator und Herstellungsverfahren derselben Download PDFInfo
- Publication number
- DE60304931T2 DE60304931T2 DE60304931T DE60304931T DE60304931T2 DE 60304931 T2 DE60304931 T2 DE 60304931T2 DE 60304931 T DE60304931 T DE 60304931T DE 60304931 T DE60304931 T DE 60304931T DE 60304931 T2 DE60304931 T2 DE 60304931T2
- Authority
- DE
- Germany
- Prior art keywords
- reflector
- producing
- vertical cavity
- cavity optical
- sacrificial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 238000005530 etching Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
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- 238000000151 deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
- H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US151646 | 1993-11-15 | ||
| US10/151,646 US6806110B2 (en) | 2002-05-16 | 2002-05-16 | Monolithic multi-wavelength vertical-cavity surface emitting laser array and method of manufacture therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60304931D1 DE60304931D1 (de) | 2006-06-08 |
| DE60304931T2 true DE60304931T2 (de) | 2007-01-04 |
Family
ID=29269815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60304931T Expired - Fee Related DE60304931T2 (de) | 2002-05-16 | 2003-02-03 | Monolithische Mehrwellenlängen Anordnung von Oberflächenemittierenden Lasern mit vertikalem Resonator und Herstellungsverfahren derselben |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6806110B2 (enExample) |
| EP (1) | EP1363369B1 (enExample) |
| JP (1) | JP2003332686A (enExample) |
| DE (1) | DE60304931T2 (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7297471B1 (en) | 2003-04-15 | 2007-11-20 | Idc, Llc | Method for manufacturing an array of interferometric modulators |
| US7550794B2 (en) | 2002-09-20 | 2009-06-23 | Idc, Llc | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
| US7781850B2 (en) | 2002-09-20 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
| US7039075B2 (en) * | 2003-04-11 | 2006-05-02 | Thornton Robert L | Fiber extended, semiconductor laser |
| TW570896B (en) | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
| US7221495B2 (en) | 2003-06-24 | 2007-05-22 | Idc Llc | Thin film precursor stack for MEMS manufacturing |
| KR101354520B1 (ko) | 2004-07-29 | 2014-01-21 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법 |
| DE102004052686A1 (de) * | 2004-08-23 | 2006-03-02 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement mit einem gekrümmten Spiegel und Verfahren zum Herstellen eines Halbleiterbauelements mit einem gekrümmten Halbleiterkörper |
| US7492502B2 (en) | 2004-09-27 | 2009-02-17 | Idc, Llc | Method of fabricating a free-standing microstructure |
| TW200628877A (en) * | 2005-02-04 | 2006-08-16 | Prime View Int Co Ltd | Method of manufacturing optical interference type color display |
| US7831520B2 (en) * | 2005-06-28 | 2010-11-09 | Ebay Inc. | Mobile device communication system |
| EP2495212A3 (en) | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | Mems devices having support structures and methods of fabricating the same |
| JP2009503564A (ja) | 2005-07-22 | 2009-01-29 | クアルコム，インコーポレイテッド | Ｍｅｍｓデバイスのための支持構造、およびその方法 |
| KR20080040715A (ko) | 2005-07-22 | 2008-05-08 | 콸콤 인코포레이티드 | Ｍｅｍｓ 장치를 위한 지지 구조물 및 그 방법들 |
| US7795061B2 (en) | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
| US7382515B2 (en) | 2006-01-18 | 2008-06-03 | Qualcomm Mems Technologies, Inc. | Silicon-rich silicon nitrides as etch stops in MEMS manufacture |
| US7547568B2 (en) | 2006-02-22 | 2009-06-16 | Qualcomm Mems Technologies, Inc. | Electrical conditioning of MEMS device and insulating layer thereof |
| US7450295B2 (en) | 2006-03-02 | 2008-11-11 | Qualcomm Mems Technologies, Inc. | Methods for producing MEMS with protective coatings using multi-component sacrificial layers |
| US7623287B2 (en) | 2006-04-19 | 2009-11-24 | Qualcomm Mems Technologies, Inc. | Non-planar surface structures and process for microelectromechanical systems |
| US7527996B2 (en) | 2006-04-19 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Non-planar surface structures and process for microelectromechanical systems |
| US7321457B2 (en) | 2006-06-01 | 2008-01-22 | Qualcomm Incorporated | Process and structure for fabrication of MEMS device having isolated edge posts |
| US7763546B2 (en) | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
| US7733552B2 (en) | 2007-03-21 | 2010-06-08 | Qualcomm Mems Technologies, Inc | MEMS cavity-coating layers and methods |
| US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
| US7569488B2 (en) | 2007-06-22 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | Methods of making a MEMS device by monitoring a process parameter |
| JP2009272375A (ja) * | 2008-05-01 | 2009-11-19 | Sumitomo Electric Ind Ltd | 半導体レーザの製造方法及び半導体レーザ |
| US7851239B2 (en) | 2008-06-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices |
| US7864403B2 (en) | 2009-03-27 | 2011-01-04 | Qualcomm Mems Technologies, Inc. | Post-release adjustment of interferometric modulator reflectivity |
| CN102714396B (zh) * | 2010-01-29 | 2014-12-10 | 惠普发展公司，有限责任合伙企业 | 多模垂直腔表面发射激光器阵列 |
| US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
| US9112331B2 (en) | 2012-03-22 | 2015-08-18 | Palo Alto Research Center Incorporated | Surface emitting laser incorporating third reflector |
| US9124062B2 (en) * | 2012-03-22 | 2015-09-01 | Palo Alto Research Center Incorporated | Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector |
| US9112332B2 (en) | 2012-06-14 | 2015-08-18 | Palo Alto Research Center Incorporated | Electron beam pumped vertical cavity surface emitting laser |
| JP5969677B2 (ja) * | 2015-10-05 | 2016-08-17 | ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． | マルチモードのモノリシック垂直共振器面発光レーザアレイ及びこれを用いたレーザシステム |
| CN107565380B (zh) * | 2017-08-29 | 2019-04-16 | 中国航空工业集团公司洛阳电光设备研究所 | 一种共轴输出的多波长激光装置 |
| US20230057446A1 (en) * | 2020-01-08 | 2023-02-23 | Sony Group Corporation | Light emitting element |
| JP2024110811A (ja) * | 2023-02-03 | 2024-08-16 | キヤノン株式会社 | アンテナ |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5291502A (en) * | 1992-09-04 | 1994-03-01 | The Board Of Trustees Of The Leland Stanford, Jr. University | Electrostatically tunable optical device and optical interconnect for processors |
| US6324192B1 (en) * | 1995-09-29 | 2001-11-27 | Coretek, Inc. | Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same |
| US5739945A (en) * | 1995-09-29 | 1998-04-14 | Tayebati; Parviz | Electrically tunable optical filter utilizing a deformable multi-layer mirror |
| WO1999034484A2 (en) | 1997-12-29 | 1999-07-08 | Coretek, Inc. | Microelectromechanically, tunable, confocal, vcsel and fabry-perot filter |
| US5991326A (en) * | 1998-04-14 | 1999-11-23 | Bandwidth9, Inc. | Lattice-relaxed verticle optical cavities |
| US6341137B1 (en) * | 1999-04-27 | 2002-01-22 | Gore Enterprise Holdings, Inc. | Wavelength division multiplexed array of long-wavelength vertical cavity lasers |
| US6675134B2 (en) * | 2001-03-15 | 2004-01-06 | Cerebrus Solutions Ltd. | Performance assessment of data classifiers |
| US6542531B2 (en) * | 2001-03-15 | 2003-04-01 | Ecole Polytechnique Federale De Lausanne | Vertical cavity surface emitting laser and a method of fabrication thereof |
| US6782019B2 (en) * | 2001-08-16 | 2004-08-24 | Applied Optoelectronics, Inc. | VCSEL with heat-spreading layer |
-
2002
- 2002-05-16 US US10/151,646 patent/US6806110B2/en not_active Expired - Fee Related
-
2003
- 2003-02-03 EP EP03002337A patent/EP1363369B1/en not_active Expired - Lifetime
- 2003-02-03 DE DE60304931T patent/DE60304931T2/de not_active Expired - Fee Related
- 2003-05-01 JP JP2003126147A patent/JP2003332686A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US20030214992A1 (en) | 2003-11-20 |
| EP1363369B1 (en) | 2006-05-03 |
| JP2003332686A (ja) | 2003-11-21 |
| US6806110B2 (en) | 2004-10-19 |
| DE60304931D1 (de) | 2006-06-08 |
| EP1363369A1 (en) | 2003-11-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D. STAATES, US |
|
| 8339 | Ceased/non-payment of the annual fee |