JP2003332686A - 垂直空洞光デバイスのモノリシックアレイを製造する方法 - Google Patents

垂直空洞光デバイスのモノリシックアレイを製造する方法

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Publication number
JP2003332686A
JP2003332686A JP2003126147A JP2003126147A JP2003332686A JP 2003332686 A JP2003332686 A JP 2003332686A JP 2003126147 A JP2003126147 A JP 2003126147A JP 2003126147 A JP2003126147 A JP 2003126147A JP 2003332686 A JP2003332686 A JP 2003332686A
Authority
JP
Japan
Prior art keywords
reflector
sacrificial
forming
different
vertical cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003126147A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003332686A5 (enExample
Inventor
Steven D Lester
スティーヴン・ディ・レスター
Virginia M Robbins
ヴァージニア・エム・ロビンズ
Jeffrey N Miller
ジェフリー・エヌ・ミラー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2003332686A publication Critical patent/JP2003332686A/ja
Publication of JP2003332686A5 publication Critical patent/JP2003332686A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2003126147A 2002-05-16 2003-05-01 垂直空洞光デバイスのモノリシックアレイを製造する方法 Withdrawn JP2003332686A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/151,646 US6806110B2 (en) 2002-05-16 2002-05-16 Monolithic multi-wavelength vertical-cavity surface emitting laser array and method of manufacture therefor
US10/151,646 2002-05-16

Publications (2)

Publication Number Publication Date
JP2003332686A true JP2003332686A (ja) 2003-11-21
JP2003332686A5 JP2003332686A5 (enExample) 2006-06-01

Family

ID=29269815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003126147A Withdrawn JP2003332686A (ja) 2002-05-16 2003-05-01 垂直空洞光デバイスのモノリシックアレイを製造する方法

Country Status (4)

Country Link
US (1) US6806110B2 (enExample)
EP (1) EP1363369B1 (enExample)
JP (1) JP2003332686A (enExample)
DE (1) DE60304931T2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006060239A (ja) * 2004-08-23 2006-03-02 Osram Opto Semiconductors Gmbh 半導体構成素子及び半導体構成素子の製造方法
JP2009272375A (ja) * 2008-05-01 2009-11-19 Sumitomo Electric Ind Ltd 半導体レーザの製造方法及び半導体レーザ
JP2013518429A (ja) * 2010-01-29 2013-05-20 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． マルチモード垂直共振器面発光レーザアレイ
JP2016028439A (ja) * 2015-10-05 2016-02-25 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． マルチモードのモノリシック垂直共振器面発光レーザアレイ及びこれを用いたレーザシステム
WO2021140803A1 (ja) * 2020-01-08 2021-07-15 ソニーグループ株式会社 発光素子

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US7297471B1 (en) 2003-04-15 2007-11-20 Idc, Llc Method for manufacturing an array of interferometric modulators
US7550794B2 (en) 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
US7039075B2 (en) * 2003-04-11 2006-05-02 Thornton Robert L Fiber extended, semiconductor laser
TW570896B (en) 2003-05-26 2004-01-11 Prime View Int Co Ltd A method for fabricating an interference display cell
US7221495B2 (en) 2003-06-24 2007-05-22 Idc Llc Thin film precursor stack for MEMS manufacturing
KR101354520B1 (ko) 2004-07-29 2014-01-21 퀄컴 엠이엠에스 테크놀로지스, 인크. 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법
US7492502B2 (en) 2004-09-27 2009-02-17 Idc, Llc Method of fabricating a free-standing microstructure
TW200628877A (en) * 2005-02-04 2006-08-16 Prime View Int Co Ltd Method of manufacturing optical interference type color display
US7831520B2 (en) * 2005-06-28 2010-11-09 Ebay Inc. Mobile device communication system
EP2495212A3 (en) 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
JP2009503564A (ja) 2005-07-22 2009-01-29 クアルコム，インコーポレイテッド Ｍｅｍｓデバイスのための支持構造、およびその方法
KR20080040715A (ko) 2005-07-22 2008-05-08 콸콤 인코포레이티드 Ｍｅｍｓ 장치를 위한 지지 구조물 및 그 방법들
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7547568B2 (en) 2006-02-22 2009-06-16 Qualcomm Mems Technologies, Inc. Electrical conditioning of MEMS device and insulating layer thereof
US7450295B2 (en) 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US7623287B2 (en) 2006-04-19 2009-11-24 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7527996B2 (en) 2006-04-19 2009-05-05 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7321457B2 (en) 2006-06-01 2008-01-22 Qualcomm Incorporated Process and structure for fabrication of MEMS device having isolated edge posts
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en) 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
US7851239B2 (en) 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US7864403B2 (en) 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US9112331B2 (en) 2012-03-22 2015-08-18 Palo Alto Research Center Incorporated Surface emitting laser incorporating third reflector
US9124062B2 (en) * 2012-03-22 2015-09-01 Palo Alto Research Center Incorporated Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector
US9112332B2 (en) 2012-06-14 2015-08-18 Palo Alto Research Center Incorporated Electron beam pumped vertical cavity surface emitting laser
CN107565380B (zh) * 2017-08-29 2019-04-16 中国航空工业集团公司洛阳电光设备研究所 一种共轴输出的多波长激光装置
JP2024110811A (ja) * 2023-02-03 2024-08-16 キヤノン株式会社 アンテナ

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US5291502A (en) * 1992-09-04 1994-03-01 The Board Of Trustees Of The Leland Stanford, Jr. University Electrostatically tunable optical device and optical interconnect for processors
US6324192B1 (en) * 1995-09-29 2001-11-27 Coretek, Inc. Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same
US5739945A (en) * 1995-09-29 1998-04-14 Tayebati; Parviz Electrically tunable optical filter utilizing a deformable multi-layer mirror
WO1999034484A2 (en) 1997-12-29 1999-07-08 Coretek, Inc. Microelectromechanically, tunable, confocal, vcsel and fabry-perot filter
US5991326A (en) * 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6341137B1 (en) * 1999-04-27 2002-01-22 Gore Enterprise Holdings, Inc. Wavelength division multiplexed array of long-wavelength vertical cavity lasers
US6675134B2 (en) * 2001-03-15 2004-01-06 Cerebrus Solutions Ltd. Performance assessment of data classifiers
US6542531B2 (en) * 2001-03-15 2003-04-01 Ecole Polytechnique Federale De Lausanne Vertical cavity surface emitting laser and a method of fabrication thereof
US6782019B2 (en) * 2001-08-16 2004-08-24 Applied Optoelectronics, Inc. VCSEL with heat-spreading layer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006060239A (ja) * 2004-08-23 2006-03-02 Osram Opto Semiconductors Gmbh 半導体構成素子及び半導体構成素子の製造方法
JP2009272375A (ja) * 2008-05-01 2009-11-19 Sumitomo Electric Ind Ltd 半導体レーザの製造方法及び半導体レーザ
JP2013518429A (ja) * 2010-01-29 2013-05-20 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． マルチモード垂直共振器面発光レーザアレイ
JP2016028439A (ja) * 2015-10-05 2016-02-25 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． マルチモードのモノリシック垂直共振器面発光レーザアレイ及びこれを用いたレーザシステム
WO2021140803A1 (ja) * 2020-01-08 2021-07-15 ソニーグループ株式会社 発光素子
JPWO2021140803A1 (enExample) * 2020-01-08 2021-07-15
JP7556362B2 (ja) 2020-01-08 2024-09-26 ソニーグループ株式会社 発光素子

Also Published As

Publication number Publication date
US20030214992A1 (en) 2003-11-20
EP1363369B1 (en) 2006-05-03
US6806110B2 (en) 2004-10-19
DE60304931T2 (de) 2007-01-04
DE60304931D1 (de) 2006-06-08
EP1363369A1 (en) 2003-11-19

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