DE60304412D1 - Verfahren zur Regenerierung einer Ätzlösung, Ätzverfahren und Ätzvorrichtung - Google Patents

Verfahren zur Regenerierung einer Ätzlösung, Ätzverfahren und Ätzvorrichtung

Info

Publication number
DE60304412D1
DE60304412D1 DE60304412T DE60304412T DE60304412D1 DE 60304412 D1 DE60304412 D1 DE 60304412D1 DE 60304412 T DE60304412 T DE 60304412T DE 60304412 T DE60304412 T DE 60304412T DE 60304412 D1 DE60304412 D1 DE 60304412D1
Authority
DE
Germany
Prior art keywords
etching
etching solution
silicon compound
phosphoric acid
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60304412T
Other languages
English (en)
Other versions
DE60304412T2 (de
Inventor
Nobuhiko Izuta
Mitsugu Murata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MFSI Ltd
Original Assignee
MFSI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MFSI Ltd filed Critical MFSI Ltd
Application granted granted Critical
Publication of DE60304412D1 publication Critical patent/DE60304412D1/de
Publication of DE60304412T2 publication Critical patent/DE60304412T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/46—Regeneration of etching compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
DE60304412T 2002-09-17 2003-09-16 Verfahren zur Regenerierung einer Ätzlösung, Ätzverfahren und Ätzvorrichtung Expired - Lifetime DE60304412T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002269405 2002-09-17
JP2002269405 2002-09-17

Publications (2)

Publication Number Publication Date
DE60304412D1 true DE60304412D1 (de) 2006-05-18
DE60304412T2 DE60304412T2 (de) 2006-09-21

Family

ID=31973197

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60304412T Expired - Lifetime DE60304412T2 (de) 2002-09-17 2003-09-16 Verfahren zur Regenerierung einer Ätzlösung, Ätzverfahren und Ätzvorrichtung

Country Status (7)

Country Link
US (1) US7238295B2 (de)
EP (1) EP1403907B1 (de)
KR (1) KR100705881B1 (de)
CN (1) CN100336182C (de)
AT (1) ATE322741T1 (de)
DE (1) DE60304412T2 (de)
TW (1) TWI233157B (de)

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EP1724824A3 (de) * 2005-05-17 2010-08-25 Apprecia Technology Inc. Apparat und Methode zur Messung der Siliziumkonzentration in Phosphorsäure
KR100655429B1 (ko) * 2005-11-10 2006-12-08 삼성전자주식회사 인산 용액을 재생하는 방법 및 장치, 그리고 인산 용액을사용하여 기판을 처리하는 장치
JP4786351B2 (ja) * 2006-01-20 2011-10-05 株式会社東芝 処理装置及び処理方法
TWI334624B (en) * 2006-01-30 2010-12-11 Dainippon Screen Mfg Apparatus for and method for processing substrate
JP4944558B2 (ja) * 2006-10-12 2012-06-06 アプリシアテクノロジー株式会社 エッチング液の再生方法、エッチング方法およびエッチング装置
US8409997B2 (en) 2007-01-25 2013-04-02 Taiwan Semiconductor Maufacturing Co., Ltd. Apparatus and method for controlling silicon nitride etching tank
JP5242061B2 (ja) * 2007-02-08 2013-07-24 日本リファイン株式会社 複数の金属イオンを含むリン酸水溶液から精製リン酸を得る方法及び装置
US20080217296A1 (en) * 2007-03-07 2008-09-11 United Microelectronics Corp. Etching apparatus for semiconductor processing apparatus and method thereof for recycling etchant solutions
US8460478B2 (en) * 2007-05-29 2013-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Wet processing apparatuses
TWI452620B (zh) * 2007-08-20 2014-09-11 Chemical Art Technology Inc Etching apparatus and etching apparatus
US8298435B2 (en) * 2007-10-19 2012-10-30 International Business Machines Corporation Selective etching bath methods
TWI394501B (zh) * 2009-12-28 2013-04-21 Zhen Ding Technology Co Ltd 蝕刻系統及蝕刻液再生方法
KR101171799B1 (ko) * 2010-06-29 2012-08-13 고려대학교 산학협력단 실리카 에칭 폐기물을 재활용하는 방법 및 메조다공성 물질을 제조하는 방법
CN102653451A (zh) * 2011-03-01 2012-09-05 三福化工股份有限公司 玻璃基板连续结晶式化学蚀刻方法与设备
CN103085523B (zh) * 2011-10-28 2016-12-21 富士胶片株式会社 用于平版印刷版的载体的制备方法和制备装置
US8580133B2 (en) * 2011-11-14 2013-11-12 Globalfoundries Inc. Methods of controlling the etching of silicon nitride relative to silicon dioxide
KR101302650B1 (ko) * 2012-02-03 2013-09-10 주식회사 엠엠테크 필터링 기능을 구비한 에칭 탱크
JP2014099480A (ja) * 2012-11-13 2014-05-29 Fujifilm Corp 半導体基板のエッチング方法及び半導体素子の製造方法
CN103043913B (zh) * 2013-01-21 2015-10-21 汕头市拓捷科技有限公司 一种使用可控流体场的玻璃蚀刻设备
US9887095B2 (en) * 2013-03-12 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for an etch process with silicon concentration control
JP6352385B2 (ja) * 2013-03-15 2018-07-04 ティーイーエル エフエスアイ，インコーポレイティド 加熱されたエッチング溶液を供する処理システム及び方法
US10269591B2 (en) * 2013-10-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of selectively removing silicon nitride and single wafer etching apparatus thereof
TWI578396B (zh) * 2013-12-11 2017-04-11 斯克林集團公司 基板處理方法及基板處理裝置
JP2016059855A (ja) * 2014-09-17 2016-04-25 株式会社東芝 処理装置、及び、処理液の再利用方法
TW201713751A (zh) * 2015-10-06 2017-04-16 聯華電子股份有限公司 酸槽補酸系統與方法
CN105239145A (zh) * 2015-10-29 2016-01-13 桂林斯壮微电子有限责任公司 一种去溢料装置
CN105568285B (zh) * 2015-12-31 2018-04-13 东旭（昆山）显示材料有限公司 蚀刻装置
KR102547807B1 (ko) * 2016-09-09 2023-06-28 오씨아이 주식회사 식각 용액의 재생 방법 및 시스템
JP7224117B2 (ja) * 2018-06-15 2023-02-17 東京エレクトロン株式会社 基板処理装置および処理液再利用方法
CN109148338A (zh) * 2018-09-04 2019-01-04 杭州中芯晶圆半导体股份有限公司 一种提高腐蚀机混酸换液效率的方法及装置
KR102084044B1 (ko) * 2018-12-24 2020-03-03 주식회사 세미부스터 인산용액 중의 실리콘 농도 분석방법
WO2020172454A1 (en) * 2019-02-20 2020-08-27 Weimin Li Need for si3n4 selective removal by wet chemistry
KR102296540B1 (ko) * 2019-11-07 2021-09-01 김재구 폐 에칭액의 불순물 저감 시스템
TW202209471A (zh) * 2020-05-25 2022-03-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
CN112044300B (zh) * 2020-08-25 2022-09-20 福建天甫电子材料有限公司 一种用于电子级二氧化硅蚀刻液的制备装置及制备工艺
CN115148643A (zh) * 2021-10-27 2022-10-04 中国科学院上海微系统与信息技术研究所 湿法蚀刻设备及湿法蚀刻方法

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JP3072876B2 (ja) * 1993-09-17 2000-08-07 日曹エンジニアリング株式会社 エッチング液の精製方法
KR100269013B1 (ko) * 1995-11-15 2000-11-01 이노우에 노리유끼 웨이퍼 처리액 및 그 제조방법
JPH09275091A (ja) * 1996-04-03 1997-10-21 Mitsubishi Electric Corp 半導体窒化膜エッチング装置
US5872042A (en) * 1996-08-22 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method for alignment mark regeneration
US6350322B1 (en) * 1997-03-21 2002-02-26 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
CN1060541C (zh) * 1997-09-19 2001-01-10 财团法人工业技术研究院 氮化物半导体材料的蚀刻方法
JP3928998B2 (ja) 1998-04-08 2007-06-13 エム・エフエスアイ株式会社 エッチング液の再生処理装置及びそれを用いたエッチング装置
US6255123B1 (en) * 1998-11-17 2001-07-03 Kenneth P. Reis Methods of monitoring and maintaining concentrations of selected species in solutions during semiconductor processing
US6207068B1 (en) * 1998-11-18 2001-03-27 Advanced Micro Devices, Inc. Silicon nitride etch bath system
JP3395696B2 (ja) * 1999-03-15 2003-04-14 日本電気株式会社 ウェハ処理装置およびウェハ処理方法
US6399517B2 (en) * 1999-03-30 2002-06-04 Tokyo Electron Limited Etching method and etching apparatus

Also Published As

Publication number Publication date
EP1403907B1 (de) 2006-04-05
KR20040025583A (ko) 2004-03-24
DE60304412T2 (de) 2006-09-21
EP1403907A1 (de) 2004-03-31
ATE322741T1 (de) 2006-04-15
US7238295B2 (en) 2007-07-03
TWI233157B (en) 2005-05-21
TW200405458A (en) 2004-04-01
CN100336182C (zh) 2007-09-05
KR100705881B1 (ko) 2007-04-10
CN1495865A (zh) 2004-05-12
US20040200806A1 (en) 2004-10-14

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