DE60300796D1 - Halbleiter- und Flüssigkeitsstrahlvorrichtung - Google Patents

Halbleiter- und Flüssigkeitsstrahlvorrichtung

Info

Publication number
DE60300796D1
DE60300796D1 DE60300796T DE60300796T DE60300796D1 DE 60300796 D1 DE60300796 D1 DE 60300796D1 DE 60300796 T DE60300796 T DE 60300796T DE 60300796 T DE60300796 T DE 60300796T DE 60300796 D1 DE60300796 D1 DE 60300796D1
Authority
DE
Germany
Prior art keywords
semiconductor
liquid jet
jet device
liquid
jet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60300796T
Other languages
English (en)
Other versions
DE60300796T2 (de
Inventor
Yukihiro Hayakawa
Kei Fujita
Mineo Shimotsusa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE60300796D1 publication Critical patent/DE60300796D1/de
Publication of DE60300796T2 publication Critical patent/DE60300796T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14072—Electrical connections, e.g. details on electrodes, connecting the chip to the outside...
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14088—Structure of heating means
    • B41J2/14112—Resistive element
    • B41J2/14129—Layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/13—Heads having an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE60300796T 2002-07-10 2003-07-09 Halbleiter- und Flüssigkeitsstrahlvorrichtung Expired - Lifetime DE60300796T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002201687 2002-07-10
JP2002201687A JP4272854B2 (ja) 2002-07-10 2002-07-10 半導体装置及びそれを用いた液体吐出装置

Publications (2)

Publication Number Publication Date
DE60300796D1 true DE60300796D1 (de) 2005-07-14
DE60300796T2 DE60300796T2 (de) 2006-03-23

Family

ID=29728471

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60300796T Expired - Lifetime DE60300796T2 (de) 2002-07-10 2003-07-09 Halbleiter- und Flüssigkeitsstrahlvorrichtung

Country Status (4)

Country Link
US (1) US6867457B2 (de)
EP (1) EP1380418B1 (de)
JP (1) JP4272854B2 (de)
DE (1) DE60300796T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7244370B2 (en) * 2003-08-05 2007-07-17 Canon Kabushiki Kaisha Method for producing circuit substrate
JP2006024768A (ja) * 2004-07-08 2006-01-26 Seiko Epson Corp 配線基板、配線基板の製造方法および電子機器
WO2008155084A1 (de) * 2007-06-18 2008-12-24 Microgan Gmbh Stromspiegel mit selbstleitendem transistor
JP5487852B2 (ja) * 2008-09-30 2014-05-14 サンケン電気株式会社 半導体装置
JP5390200B2 (ja) * 2009-01-19 2014-01-15 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
JP2012109425A (ja) * 2010-11-18 2012-06-07 Panasonic Corp 半導体装置及びその製造方法
JP6027771B2 (ja) * 2012-05-28 2016-11-16 キヤノン株式会社 半導体装置、半導体装置の製造方法及び液体吐出装置
JP6110738B2 (ja) * 2013-06-24 2017-04-05 キヤノン株式会社 記録素子基板、記録ヘッド及び記録装置
DE102020129305B3 (de) * 2020-11-06 2022-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Vorrichtung und Verfahren zum segmentierten Paralleldispensen

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61182264A (ja) 1985-02-08 1986-08-14 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
JPS6298764A (ja) 1985-10-25 1987-05-08 Matsushita Electric Works Ltd 半導体装置
DE69109884T2 (de) 1990-02-09 1995-10-26 Canon Kk Tintenstrahlaufzeichnungssystem.
JP2987884B2 (ja) * 1990-06-04 1999-12-06 日産自動車株式会社 半導体装置
JPH04291767A (ja) 1991-03-20 1992-10-15 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JP3176134B2 (ja) 1991-08-02 2001-06-11 キヤノン株式会社 インクジェット記録ヘッド用半導体チップ、インクジェット記録ヘッドおよびインクジェット記録装置
CA2075097C (en) 1991-08-02 2000-03-28 Hiroyuki Ishinaga Recording apparatus, recording head and substrate therefor
JPH05129597A (ja) 1991-11-07 1993-05-25 Hitachi Ltd 半導体装置
JP3305415B2 (ja) 1992-06-18 2002-07-22 キヤノン株式会社 半導体装置、インクジェットヘッド、および画像形成装置
JPH0897410A (ja) 1994-07-01 1996-04-12 Texas Instr Inc <Ti> 自己整合した横型ｄｍｏｓトランジスタの製造法
JP3183055B2 (ja) * 1994-08-08 2001-07-03 富士電機株式会社 半導体双方向性スイッチおよびその駆動方法
DE19701189B4 (de) 1996-01-18 2005-06-30 International Rectifier Corp., El Segundo Halbleiterbauteil
JP3372768B2 (ja) 1996-07-26 2003-02-04 キヤノン株式会社 記録ヘッド及びその記録ヘッドを用いた記録装置
DE69739966D1 (de) 1996-06-26 2010-09-30 Canon Kk Aufzeichnungskopf und Aufzeichnungsapparat unter Verwendung derselben
JP3356152B2 (ja) * 2000-02-23 2002-12-09 日本電気株式会社 半導体装置
US6825543B2 (en) 2000-12-28 2004-11-30 Canon Kabushiki Kaisha Semiconductor device, method for manufacturing the same, and liquid jet apparatus

Also Published As

Publication number Publication date
EP1380418B1 (de) 2005-06-08
DE60300796T2 (de) 2006-03-23
EP1380418A2 (de) 2004-01-14
JP4272854B2 (ja) 2009-06-03
EP1380418A3 (de) 2004-01-21
JP2004042379A (ja) 2004-02-12
US6867457B2 (en) 2005-03-15
US20040007767A1 (en) 2004-01-15

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Legal Events

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