DE60237615D1 - Infrarot-array-detektionseinrichtung - Google Patents

Infrarot-array-detektionseinrichtung

Info

Publication number
DE60237615D1
DE60237615D1 DE60237615T DE60237615T DE60237615D1 DE 60237615 D1 DE60237615 D1 DE 60237615D1 DE 60237615 T DE60237615 T DE 60237615T DE 60237615 T DE60237615 T DE 60237615T DE 60237615 D1 DE60237615 D1 DE 60237615D1
Authority
DE
Germany
Prior art keywords
infrared detecting
infrared
detecting pixel
frame
detection device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60237615T
Other languages
English (en)
Inventor
Katsumi Shibayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Application granted granted Critical
Publication of DE60237615D1 publication Critical patent/DE60237615D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G01J5/14—Electrical features thereof
    • G01J5/16—Arrangements with respect to the cold junction; Compensating influence of ambient temperature or other variables

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE60237615T 2001-07-12 2002-07-10 Infrarot-array-detektionseinrichtung Expired - Lifetime DE60237615D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001212474 2001-07-12
PCT/JP2002/007014 WO2003006939A1 (fr) 2001-07-12 2002-07-10 Dispositif a reseau de detection d'ir

Publications (1)

Publication Number Publication Date
DE60237615D1 true DE60237615D1 (de) 2010-10-21

Family

ID=19047629

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60237615T Expired - Lifetime DE60237615D1 (de) 2001-07-12 2002-07-10 Infrarot-array-detektionseinrichtung

Country Status (7)

Country Link
US (1) US7208734B2 (de)
EP (1) EP1413861B1 (de)
JP (1) JP3878937B2 (de)
KR (1) KR100860184B1 (de)
CN (1) CN100473962C (de)
DE (1) DE60237615D1 (de)
WO (1) WO2003006939A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4508495B2 (ja) * 2000-10-26 2010-07-21 株式会社デンソー 赤外線検出装置
JP4496751B2 (ja) * 2003-10-09 2010-07-07 日本電気株式会社 熱型赤外線固体撮像素子及びその製造方法
US7196509B2 (en) * 2004-09-23 2007-03-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Thermopile temperature sensing with color contouring
JP5546125B2 (ja) * 2005-04-01 2014-07-09 トルンプ・ヴェルクツォイクマシーネン・ゲーエム・ベーハー・ウント・コンパニ・カーゲー ピクセル・マトリクスの形態で設けられる温度センサを備える、ビーム・パラメータを記録する光学要素および方法
EP1976034A3 (de) * 2007-03-29 2011-11-09 Stichting IMEC Nederland Herstellungsverfahren für eine Thermosäule, damit hergestellte Thermosäule und thermoelektrischer Generator mit solchen Thermosäulen
WO2010035738A1 (ja) * 2008-09-25 2010-04-01 パナソニック電工株式会社 赤外線センサ
JP5449376B2 (ja) * 2009-09-24 2014-03-19 株式会社東芝 赤外線撮像素子及びこれを用いた赤外線撮像装置
JP5541137B2 (ja) * 2010-12-15 2014-07-09 ソニー株式会社 撮像装置、電子機器、太陽電池、および、撮像装置の製造方法
US8441093B2 (en) * 2011-04-15 2013-05-14 Excelitas Technologies Singapore Pte. Ltd. Shared membrane thermopile sensor array
CN103185611A (zh) * 2013-04-03 2013-07-03 无锡华润上华半导体有限公司 与cmos工艺兼容的mems温度湿度集成传感器及其制造方法
CN103474502B (zh) * 2013-08-29 2016-03-30 电子科技大学 一种补偿型热释电红外单元探测器
US9219185B2 (en) 2013-12-19 2015-12-22 Excelitas Technologies Singapore Pte. Ltd CMOS integrated method for the fabrication of thermopile pixel with umbrella absorber on semiconductor substrate
US9373772B2 (en) 2014-01-15 2016-06-21 Excelitas Technologies Singapore Pte. Ltd. CMOS integrated method for the release of thermopile pixel on a substrate by using anisotropic and isotropic etching
US9324760B2 (en) * 2014-01-21 2016-04-26 Excelitas Technologies Singapore Pte. Ltd CMOS integrated method for fabrication of thermopile pixel on semiconductor substrate with buried insulation regions
CN103915459B (zh) * 2014-03-17 2016-06-29 东南大学 自供电射频收发组件中砷化镓基热电-光电微传感器
CN103915458B (zh) * 2014-03-17 2016-06-29 东南大学 自供电射频收发组件中硅基热电-光电集成微传感器
US10128302B2 (en) 2016-01-28 2018-11-13 Ams Sensors Uk Limited IR detector array device
US10811585B2 (en) 2016-03-07 2020-10-20 Teknologian Tutkimuskeskus Vtt Oy Thermoelectric device
US10203252B2 (en) 2016-12-29 2019-02-12 Industrial Technology Research Institute Microelectromechanical apparatus having a measuring range selector
RU2699239C1 (ru) * 2018-11-12 2019-09-04 Акционерное общество "НПО "Орион" Крупноформатное сканирующее инфракрасное матричное фотоприемное устройство
CN111710749B (zh) * 2020-04-23 2022-09-09 中国科学院上海技术物理研究所 基于多基板二次拼接的长线列探测器拼接结构及实现方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558342A (en) * 1983-05-31 1985-12-10 Rockwell International Corporation Thermoelectric infrared detector array
JPH02205729A (ja) * 1989-02-03 1990-08-15 Nec Corp 赤外線センサ
JP2663612B2 (ja) 1989-02-09 1997-10-15 日産自動車株式会社 赤外線センサ
JP2884679B2 (ja) 1990-03-27 1999-04-19 日本電気株式会社 サーモパイル型赤外線センサ
JP3008210B2 (ja) 1990-09-03 2000-02-14 株式会社トーキン アレイ型サーモパイルを用いた速度検出装置及び大きさ測定装置
JPH07198479A (ja) 1993-12-28 1995-08-01 Matsushita Electric Ind Co Ltd 焦電型赤外線センサ
JPH11148868A (ja) 1997-11-17 1999-06-02 Masanori Okuyama 熱検知素子およびその製造方法
KR100376925B1 (ko) * 1997-12-18 2003-03-26 미쓰비시덴키 가부시키가이샤 적외선 고체 촬상소자
JP3809718B2 (ja) 1997-12-26 2006-08-16 日産自動車株式会社 赤外線検知素子
US6046398A (en) * 1998-11-04 2000-04-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Micromachined thermoelectric sensors and arrays and process for producing
US6300554B1 (en) * 1999-09-09 2001-10-09 Metrodyne Microsystem Corp. Method of fabricating thermoelectric sensor and thermoelectric sensor device
JP4508495B2 (ja) 2000-10-26 2010-07-21 株式会社デンソー 赤外線検出装置
JP2002176204A (ja) 2000-12-07 2002-06-21 Ihi Aerospace Co Ltd 赤外線検出素子

Also Published As

Publication number Publication date
JPWO2003006939A1 (ja) 2004-11-04
KR20040019325A (ko) 2004-03-05
US20040169144A1 (en) 2004-09-02
KR100860184B1 (ko) 2008-09-24
US7208734B2 (en) 2007-04-24
CN1639552A (zh) 2005-07-13
CN100473962C (zh) 2009-04-01
EP1413861A1 (de) 2004-04-28
JP3878937B2 (ja) 2007-02-07
EP1413861B1 (de) 2010-09-08
WO2003006939A1 (fr) 2003-01-23
EP1413861A4 (de) 2009-11-04

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