DE60234906D1 - Verfahren zur herstellung einer phasenverschiebungsmaske und phasenverschiebungsmaske - Google Patents

Verfahren zur herstellung einer phasenverschiebungsmaske und phasenverschiebungsmaske

Info

Publication number
DE60234906D1
DE60234906D1 DE60234906T DE60234906T DE60234906D1 DE 60234906 D1 DE60234906 D1 DE 60234906D1 DE 60234906 T DE60234906 T DE 60234906T DE 60234906 T DE60234906 T DE 60234906T DE 60234906 D1 DE60234906 D1 DE 60234906D1
Authority
DE
Germany
Prior art keywords
phase shifting
shifting mask
producing
mask
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60234906T
Other languages
English (en)
Inventor
Haruo Kokubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001037998A external-priority patent/JP2002244270A/ja
Priority claimed from JP2001059516A external-priority patent/JP2002258457A/ja
Priority claimed from JP2001064198A external-priority patent/JP2002268197A/ja
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Application granted granted Critical
Publication of DE60234906D1 publication Critical patent/DE60234906D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE60234906T 2001-02-15 2002-02-15 Verfahren zur herstellung einer phasenverschiebungsmaske und phasenverschiebungsmaske Expired - Lifetime DE60234906D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001037998A JP2002244270A (ja) 2001-02-15 2001-02-15 位相シフトマスクの製造方法および位相シフトマスク
JP2001059516A JP2002258457A (ja) 2001-03-05 2001-03-05 位相シフトマスクの製造方法および位相シフトマスク
JP2001064198A JP2002268197A (ja) 2001-03-08 2001-03-08 位相シフトマスクの製造方法および位相シフトマスク
PCT/JP2002/001313 WO2002065211A1 (fr) 2001-02-15 2002-02-15 Masque a dephasage et son procede de fabrication

Publications (1)

Publication Number Publication Date
DE60234906D1 true DE60234906D1 (de) 2010-02-11

Family

ID=27345993

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60234906T Expired - Lifetime DE60234906D1 (de) 2001-02-15 2002-02-15 Verfahren zur herstellung einer phasenverschiebungsmaske und phasenverschiebungsmaske

Country Status (6)

Country Link
US (1) US7056624B2 (de)
EP (1) EP1361478B1 (de)
KR (1) KR100886419B1 (de)
DE (1) DE60234906D1 (de)
TW (1) TW548514B (de)
WO (1) WO2002065211A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004029081A (ja) * 2002-06-21 2004-01-29 Canon Inc 位相シフトマスク、該位相シフトマスクを用いたパタン形成法、該パタン形成法による固体素子
JP4619043B2 (ja) * 2004-06-02 2011-01-26 Ｈｏｙａ株式会社 位相シフトマスクの製造方法及びテンプレートの製造方法
US7427458B2 (en) * 2005-06-30 2008-09-23 Lam Research Corporation System and method for critical dimension reduction and pitch reduction
US7882832B2 (en) * 2005-07-20 2011-02-08 Claudio Filippone Solar pump systems and related methods
JP2009025553A (ja) * 2007-07-19 2009-02-05 Canon Inc 位相シフトマスク
KR20110059510A (ko) * 2009-11-27 2011-06-02 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 그의 제조 방법
JP2011002859A (ja) * 2010-10-04 2011-01-06 Hoya Corp 位相シフトマスクの製造方法及びテンプレートの製造方法
CN113641078A (zh) * 2021-08-12 2021-11-12 深圳市龙图光电有限公司 凹槽掩模版的制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56133737A (en) 1980-03-25 1981-10-20 Fujitsu Ltd Photomask
US4522681A (en) * 1984-04-23 1985-06-11 General Electric Company Method for tapered dry etching
EP0263220B1 (de) * 1986-10-08 1992-09-09 International Business Machines Corporation Verfahren zur Herstellung einer Kontaktöffnung mit gewünschter Schräge in einer zusammengesetzten Schicht, die mit Photoresist maskiert ist
US5397665A (en) * 1990-04-27 1995-03-14 Dai Nippon Printing Co., Ltd. Photomask with pellicle and method of treating and storing the same
JPH05303190A (ja) 1992-04-24 1993-11-16 Hitachi Ltd 位相シフト用フォトマスク及びその作製方法
US5624582A (en) 1993-01-21 1997-04-29 Vlsi Technology, Inc. Optimization of dry etching through the control of helium backside pressure
JP3257893B2 (ja) * 1993-10-18 2002-02-18 三菱電機株式会社 位相シフトマスク、その位相シフトマスクの製造方法およびその位相シフトマスクを用いた露光方法
JPH09146259A (ja) * 1995-08-29 1997-06-06 Ricoh Opt Ind Co Ltd グラデーションマスクとその製造方法およびグラデーションマスクを用いた特殊表面形状の創成方法
JP3388421B2 (ja) * 1996-11-26 2003-03-24 大日本印刷株式会社 フォトマスクの残留欠陥修正方法
US5920786A (en) * 1998-04-15 1999-07-06 Advanced Micro Devices Method for fabricating shallow isolation trenches using angular photoresist profiles to create sloped isolation trench walls
US6613498B1 (en) * 1998-09-17 2003-09-02 Mems Optical Llc Modulated exposure mask and method of using a modulated exposure mask
JP3751762B2 (ja) * 1998-12-08 2006-03-01 株式会社東芝 半導体装置の製造方法および原板
US6251549B1 (en) * 1999-07-19 2001-06-26 Marc David Levenson Generic phase shift mask
WO2001006320A1 (en) 1999-07-19 2001-01-25 Marc Levenson Generic phase shift mask

Also Published As

Publication number Publication date
US7056624B2 (en) 2006-06-06
EP1361478A4 (de) 2008-05-21
US20040023129A1 (en) 2004-02-05
WO2002065211A1 (fr) 2002-08-22
TW548514B (en) 2003-08-21
KR20020087986A (ko) 2002-11-23
EP1361478A1 (de) 2003-11-12
KR100886419B1 (ko) 2009-03-02
EP1361478B1 (de) 2009-12-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition