DE60227214D1 - Leitungsmuster von elekrischen Heizelementen und Muster enthaltende Substratbehandlungsvorrichtung - Google Patents

Leitungsmuster von elekrischen Heizelementen und Muster enthaltende Substratbehandlungsvorrichtung

Info

Publication number
DE60227214D1
DE60227214D1 DE60227214T DE60227214T DE60227214D1 DE 60227214 D1 DE60227214 D1 DE 60227214D1 DE 60227214 T DE60227214 T DE 60227214T DE 60227214 T DE60227214 T DE 60227214T DE 60227214 D1 DE60227214 D1 DE 60227214D1
Authority
DE
Germany
Prior art keywords
pattern
treatment device
heating elements
electrical heating
containing substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60227214T
Other languages
English (en)
Inventor
Masuhiro Natsuhara
Hirohiko Nakata
Akira Kuibira
Masashi Narita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE60227214D1 publication Critical patent/DE60227214D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
DE60227214T 2001-04-18 2002-04-18 Leitungsmuster von elekrischen Heizelementen und Muster enthaltende Substratbehandlungsvorrichtung Expired - Lifetime DE60227214D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001119566 2001-04-18
JP2002085021A JP3582518B2 (ja) 2001-04-18 2002-03-26 抵抗発熱体回路パターンとそれを用いた基板処理装置

Publications (1)

Publication Number Publication Date
DE60227214D1 true DE60227214D1 (de) 2008-08-07

Family

ID=26613765

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60227214T Expired - Lifetime DE60227214D1 (de) 2001-04-18 2002-04-18 Leitungsmuster von elekrischen Heizelementen und Muster enthaltende Substratbehandlungsvorrichtung

Country Status (7)

Country Link
US (1) US6664515B2 (de)
EP (1) EP1251719B1 (de)
JP (1) JP3582518B2 (de)
KR (1) KR100879848B1 (de)
CA (1) CA2381597C (de)
DE (1) DE60227214D1 (de)
TW (1) TW541640B (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4602662B2 (ja) * 2003-12-01 2010-12-22 株式会社ブリヂストン セラミックヒータユニット
JP4187208B2 (ja) * 2004-01-09 2008-11-26 日本碍子株式会社 ヒーター
JP2005216759A (ja) * 2004-01-30 2005-08-11 Nhk Spring Co Ltd ヒータユニット
US7164104B2 (en) * 2004-06-14 2007-01-16 Watlow Electric Manufacturing Company In-line heater for use in semiconductor wet chemical processing and method of manufacturing the same
US7880122B2 (en) * 2004-07-28 2011-02-01 Joeun Technology Co., Ltd. Wafer having thermal circuit and power supplier therefor
JP4654153B2 (ja) * 2006-04-13 2011-03-16 信越化学工業株式会社 加熱素子
US8168050B2 (en) * 2006-07-05 2012-05-01 Momentive Performance Materials Inc. Electrode pattern for resistance heating element and wafer processing apparatus
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
KR101644673B1 (ko) * 2009-12-15 2016-08-01 램 리써치 코포레이션 Ｃｄ 균일성을 향상시키기 위한 기판 온도의 조절
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
JP5915026B2 (ja) * 2011-08-26 2016-05-11 住友大阪セメント株式会社 温度測定用板状体及びそれを備えた温度測定装置
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US8461674B2 (en) 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
US9324589B2 (en) 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US8809747B2 (en) 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
US10049948B2 (en) 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
CN103596304B (zh) * 2013-11-07 2015-10-28 上海大学 一种嵌入式自测温微热台及其制备方法
US9543171B2 (en) 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
JP6886128B2 (ja) 2016-11-29 2021-06-16 住友電気工業株式会社 ウエハ保持体
JP7063334B2 (ja) 2017-06-14 2022-05-09 住友電気工業株式会社 半導体基板加熱用基板載置台および半導体基板加熱ヒータ
KR102150811B1 (ko) 2017-07-13 2020-09-01 스미토모덴키고교가부시키가이샤 세라믹스 히터
KR20190053941A (ko) 2017-10-10 2019-05-20 스미토모덴키고교가부시키가이샤 웨이퍼 가열용 히터 유닛
CN107992128A (zh) * 2018-01-09 2018-05-04 京东方科技集团股份有限公司 控温加热面板及制备方法、加热方法
CN109561528B (zh) * 2018-12-13 2021-08-10 中国计量科学研究院 原子气室加热芯片
US20230084616A1 (en) * 2020-02-18 2023-03-16 Kyocera Corporation Heater substrate, probe card substrate, and probe card

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3067315A (en) * 1960-02-08 1962-12-04 Gen Electric Multi-layer film heaters in strip form
US3883719A (en) * 1974-05-10 1975-05-13 Gen Electric Glass-ceramic cooktop with film heaters
US3895216A (en) * 1974-09-30 1975-07-15 Gen Electric Low thermal mass solid plate surface heating unit
EP0342363A3 (de) 1988-04-26 1990-05-30 Hoechst Aktiengesellschaft Neue Angucyclinone aus Streptomyceten, Verfahren zu ihrer Herstellung und ihre Verwendung
US6133557A (en) * 1995-01-31 2000-10-17 Kyocera Corporation Wafer holding member
GB2322273B (en) * 1997-02-17 2001-05-30 Strix Ltd Electric heaters
JP3477062B2 (ja) * 1997-12-26 2003-12-10 京セラ株式会社 ウエハ加熱装置
JPH11260534A (ja) * 1998-01-09 1999-09-24 Ngk Insulators Ltd 加熱装置およびその製造方法
JP3515900B2 (ja) 1998-05-06 2004-04-05 京セラ株式会社 セラミックヒータ
JP4166345B2 (ja) * 1998-10-07 2008-10-15 日本碍子株式会社 塩素系ガスに対する耐蝕性部材
JP3793555B2 (ja) * 1999-05-31 2006-07-05 京セラ株式会社 円盤状ヒータ
JP2001085144A (ja) * 1999-07-09 2001-03-30 Ibiden Co Ltd セラミックヒータ
JP2001068255A (ja) * 1999-08-31 2001-03-16 Kyocera Corp 円盤状ヒータ

Also Published As

Publication number Publication date
KR100879848B1 (ko) 2009-01-22
CA2381597A1 (en) 2002-10-18
US6664515B2 (en) 2003-12-16
TW541640B (en) 2003-07-11
KR20020081142A (ko) 2002-10-26
EP1251719A3 (de) 2006-05-17
EP1251719A2 (de) 2002-10-23
JP3582518B2 (ja) 2004-10-27
JP2003017224A (ja) 2003-01-17
US20020185488A1 (en) 2002-12-12
EP1251719B1 (de) 2008-06-25
CA2381597C (en) 2004-08-17

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