DE60226004D1 - Leseverfahren für einen nichtflüchtigen Speicher - Google Patents

Leseverfahren für einen nichtflüchtigen Speicher

Info

Publication number
DE60226004D1
DE60226004D1 DE60226004T DE60226004T DE60226004D1 DE 60226004 D1 DE60226004 D1 DE 60226004D1 DE 60226004 T DE60226004 T DE 60226004T DE 60226004 T DE60226004 T DE 60226004T DE 60226004 D1 DE60226004 D1 DE 60226004D1
Authority
DE
Germany
Prior art keywords
volatile memory
reading method
reading
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60226004T
Other languages
English (en)
Other versions
DE60226004T2 (de
Inventor
Chih-Chieh Yeh
Wen-Jer Tsai
Tao-Cheng Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Macronix International Co Ltd
Original Assignee
Macronix International Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix International Co Ltd filed Critical Macronix International Co Ltd
Publication of DE60226004D1 publication Critical patent/DE60226004D1/de
Application granted granted Critical
Publication of DE60226004T2 publication Critical patent/DE60226004T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
DE60226004T 2002-04-02 2002-07-23 Leseverfahren für einen nichtflüchtigen Speicher Expired - Lifetime DE60226004T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US112871 2002-04-02
US10/112,871 US6801453B2 (en) 2002-04-02 2002-04-02 Method and apparatus of a read scheme for non-volatile memory

Publications (2)

Publication Number Publication Date
DE60226004D1 true DE60226004D1 (de) 2008-05-21
DE60226004T2 DE60226004T2 (de) 2009-06-18

Family

ID=28041020

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60226004T Expired - Lifetime DE60226004T2 (de) 2002-04-02 2002-07-23 Leseverfahren für einen nichtflüchtigen Speicher

Country Status (6)

Country Link
US (1) US6801453B2 (de)
EP (1) EP1351251B1 (de)
JP (1) JP2003303904A (de)
CN (1) CN1208829C (de)
DE (1) DE60226004T2 (de)
TW (1) TW544910B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7031196B2 (en) * 2002-03-29 2006-04-18 Macronix International Co., Ltd. Nonvolatile semiconductor memory and operating method of the memory
US7170785B2 (en) * 2004-09-09 2007-01-30 Macronix International Co., Ltd. Method and apparatus for operating a string of charge trapping memory cells
US7307888B2 (en) * 2004-09-09 2007-12-11 Macronix International Co., Ltd. Method and apparatus for operating nonvolatile memory in a parallel arrangement
EP1732080B1 (de) * 2005-06-03 2008-09-24 Interuniversitair Microelektronica Centrum Vzw Extraktionsverfahren für die Lastverteilung in einem Halbleiterbauelement
CN100442538C (zh) * 2005-10-13 2008-12-10 旺宏电子股份有限公司 非挥发性记忆体的操作方法
US7483299B2 (en) * 2006-08-01 2009-01-27 Macronix International Co., Ltd. Devices and operation methods for reducing second bit effect in memory device
KR101291667B1 (ko) * 2007-08-20 2013-08-01 삼성전자주식회사 불휘발성 메모리 장치 및 그 독출 방법
US8385147B2 (en) * 2010-03-30 2013-02-26 Silicon Storage Technology, Inc. Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
JP7091675B2 (ja) 2018-01-26 2022-06-28 ユナイテッド・セミコンダクター・ジャパン株式会社 半導体装置
JP7115037B2 (ja) 2018-05-25 2022-08-09 ユナイテッド・セミコンダクター・ジャパン株式会社 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644533A (en) * 1992-11-02 1997-07-01 Nvx Corporation Flash memory system, and methods of constructing and utilizing same
JP3743453B2 (ja) * 1993-01-27 2006-02-08 セイコーエプソン株式会社 不揮発性半導体記憶装置
US5768192A (en) 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US5822243A (en) * 1997-09-09 1998-10-13 Macronix International Co., Ltd. Dual mode memory with embedded ROM
US6272050B1 (en) * 1999-05-28 2001-08-07 Vlsi Technology, Inc. Method and apparatus for providing an embedded flash-EEPROM technology
US6344994B1 (en) * 2001-01-31 2002-02-05 Advanced Micro Devices Data retention characteristics as a result of high temperature bake

Also Published As

Publication number Publication date
EP1351251B1 (de) 2008-04-09
US20030185052A1 (en) 2003-10-02
EP1351251A1 (de) 2003-10-08
TW544910B (en) 2003-08-01
CN1208829C (zh) 2005-06-29
JP2003303904A (ja) 2003-10-24
CN1449025A (zh) 2003-10-15
US6801453B2 (en) 2004-10-05
DE60226004T2 (de) 2009-06-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition