DE60223514D1 - Gasphasen-aufwachseinrichtung - Google Patents

Gasphasen-aufwachseinrichtung

Info

Publication number
DE60223514D1
DE60223514D1 DE60223514T DE60223514T DE60223514D1 DE 60223514 D1 DE60223514 D1 DE 60223514D1 DE 60223514 T DE60223514 T DE 60223514T DE 60223514 T DE60223514 T DE 60223514T DE 60223514 D1 DE60223514 D1 DE 60223514D1
Authority
DE
Germany
Prior art keywords
gas phase
growing device
phase growing
gas
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60223514T
Other languages
English (en)
Other versions
DE60223514T2 (de
Inventor
Takeshi Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE60223514D1 publication Critical patent/DE60223514D1/de
Application granted granted Critical
Publication of DE60223514T2 publication Critical patent/DE60223514T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60223514T 2001-03-30 2002-03-14 Gasphasen-aufwachseinrichtung Expired - Lifetime DE60223514T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001100848A JP3931578B2 (ja) 2001-03-30 2001-03-30 気相成長装置
JP2001100848 2001-03-30
PCT/JP2002/002405 WO2002082516A1 (fr) 2001-03-30 2002-03-14 Dispositif de croissance de phase gazeuse

Publications (2)

Publication Number Publication Date
DE60223514D1 true DE60223514D1 (de) 2007-12-27
DE60223514T2 DE60223514T2 (de) 2008-09-18

Family

ID=18954247

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60223514T Expired - Lifetime DE60223514T2 (de) 2001-03-30 2002-03-14 Gasphasen-aufwachseinrichtung

Country Status (7)

Country Link
US (1) US20030075109A1 (de)
EP (1) EP1376665B1 (de)
JP (1) JP3931578B2 (de)
KR (1) KR100781912B1 (de)
DE (1) DE60223514T2 (de)
TW (1) TW521326B (de)
WO (1) WO2002082516A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6776873B1 (en) * 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
US20050160992A1 (en) * 2004-01-28 2005-07-28 Applied Materials, Inc. Substrate gripping apparatus
US20050176252A1 (en) * 2004-02-10 2005-08-11 Goodman Matthew G. Two-stage load for processing both sides of a wafer
US7906234B2 (en) * 2005-08-18 2011-03-15 Panasonic Corporation All-solid-state lithium secondary cell and method of manufacturing the same
US20070089836A1 (en) * 2005-10-24 2007-04-26 Applied Materials, Inc. Semiconductor process chamber
EP1793021A3 (de) 2005-12-02 2009-01-14 Rohm and Haas Electronic Materials LLC Verfahren zur Behandlung von Halbleitern unter Verwendung von einem Gegenstand aus Silizium Karbid
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
JP5092975B2 (ja) * 2008-07-31 2012-12-05 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP5275935B2 (ja) * 2009-07-15 2013-08-28 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
US9905443B2 (en) * 2011-03-11 2018-02-27 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
US20140007808A1 (en) * 2011-07-05 2014-01-09 Epicrew Corporation Susceptor Device And Deposition Apparatus Having The Same
JP6520050B2 (ja) * 2014-10-31 2019-05-29 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびエピタキシャルウェーハの製造方法
KR101670807B1 (ko) * 2014-12-31 2016-11-01 한국기계연구원 고온 국부가열 방식의 서셉터 및 이를 갖는 히팅 장치
KR101548903B1 (ko) 2015-03-19 2015-09-04 (주)코미코 리프트 핀 및 이의 제조 방법
JP6435992B2 (ja) * 2015-05-29 2018-12-12 株式会社Sumco エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン
TWI729101B (zh) * 2016-04-02 2021-06-01 美商應用材料股份有限公司 用於旋轉料架基座中的晶圓旋轉的設備及方法
US11264265B2 (en) * 2017-02-02 2022-03-01 Sumco Corporation Lift pin, and epitaxial growth apparatus and method of producing silicon epitaxial wafer using the lift pin
CN114078680B (zh) * 2020-08-20 2023-09-29 中微半导体设备(上海)股份有限公司 等离子体处理装置
JP7203158B2 (ja) * 2020-09-11 2023-01-12 芝浦メカトロニクス株式会社 基板処理装置
CN114695234A (zh) * 2020-12-31 2022-07-01 拓荆科技股份有限公司 保护机构及保护晶圆和销的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01167034U (de) * 1988-05-13 1989-11-22
US5421893A (en) * 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
JPH0722489A (ja) * 1993-06-29 1995-01-24 Toshiba Corp ウェハーフォーク
US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6063202A (en) * 1997-09-26 2000-05-16 Novellus Systems, Inc. Apparatus for backside and edge exclusion of polymer film during chemical vapor deposition
JPH11104950A (ja) * 1997-10-03 1999-04-20 Shin Etsu Chem Co Ltd 電極板及びその製造方法
US5931666A (en) * 1998-02-27 1999-08-03 Saint-Gobain Industrial Ceramics, Inc. Slip free vertical rack design having rounded horizontal arms
JP3092801B2 (ja) * 1998-04-28 2000-09-25 信越半導体株式会社 薄膜成長装置
US6596086B1 (en) * 1998-04-28 2003-07-22 Shin-Etsu Handotai Co., Ltd. Apparatus for thin film growth
US6146504A (en) * 1998-05-21 2000-11-14 Applied Materials, Inc. Substrate support and lift apparatus and method
JP4402763B2 (ja) * 1999-05-13 2010-01-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェーハ製造装置

Also Published As

Publication number Publication date
KR20030007719A (ko) 2003-01-23
EP1376665A4 (de) 2006-11-22
JP2002299260A (ja) 2002-10-11
US20030075109A1 (en) 2003-04-24
EP1376665B1 (de) 2007-11-14
EP1376665A1 (de) 2004-01-02
TW521326B (en) 2003-02-21
DE60223514T2 (de) 2008-09-18
WO2002082516A1 (fr) 2002-10-17
JP3931578B2 (ja) 2007-06-20
KR100781912B1 (ko) 2007-12-04

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Legal Events

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