DE60215303D1 - Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger Parasitärkapazität - Google Patents
Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger ParasitärkapazitätInfo
- Publication number
- DE60215303D1 DE60215303D1 DE60215303T DE60215303T DE60215303D1 DE 60215303 D1 DE60215303 D1 DE 60215303D1 DE 60215303 T DE60215303 T DE 60215303T DE 60215303 T DE60215303 T DE 60215303T DE 60215303 D1 DE60215303 D1 DE 60215303D1
- Authority
- DE
- Germany
- Prior art keywords
- surface emitting
- vertical cavity
- emitting laser
- cavity surface
- high speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06226—Modulation at ultra-high frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02009477A EP1357648B1 (de) | 2002-04-25 | 2002-04-25 | Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger Parasitärkapazität |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60215303D1 true DE60215303D1 (de) | 2006-11-23 |
Family
ID=28685908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60215303T Expired - Lifetime DE60215303D1 (de) | 2002-04-25 | 2002-04-25 | Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger Parasitärkapazität |
Country Status (4)
Country | Link |
---|---|
US (1) | US7061956B2 (de) |
EP (1) | EP1357648B1 (de) |
AT (1) | ATE342596T1 (de) |
DE (1) | DE60215303D1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3580803B2 (ja) * | 2002-08-09 | 2004-10-27 | 沖電気工業株式会社 | 半導体装置 |
DE102004032696A1 (de) * | 2004-07-06 | 2006-02-16 | Universität Ulm | Oberflächenemittierender Halbleiterlaser mit lateraler Wärmeabfuhr |
US7873090B2 (en) * | 2005-09-13 | 2011-01-18 | Panasonic Corporation | Surface emitting laser, photodetector and optical communication system using the same |
JP4892940B2 (ja) * | 2005-11-29 | 2012-03-07 | 富士ゼロックス株式会社 | 面発光型半導体レーザ装置およびその製造方法 |
US7505503B2 (en) * | 2007-02-23 | 2009-03-17 | Cosemi Technologies, Inc. | Vertical cavity surface emitting laser (VCSEL) and related method |
US8049957B2 (en) * | 2007-11-06 | 2011-11-01 | Northrop Grumman Systems Corporation | Scalable semiconductor waveguide amplifier |
JP2009246291A (ja) | 2008-03-31 | 2009-10-22 | Furukawa Electric Co Ltd:The | 面発光レーザアレイ素子 |
JP5466712B2 (ja) * | 2009-11-30 | 2014-04-09 | 株式会社日立製作所 | 表面出射型レーザ |
JP2012248812A (ja) * | 2011-05-31 | 2012-12-13 | Sumitomo Electric Ind Ltd | 半導体光集積素子の製造方法 |
US8923357B2 (en) | 2011-09-13 | 2014-12-30 | Seagate Technology Llc | Semiconductor laser with cathode metal layer disposed in trench region |
WO2013176201A1 (ja) * | 2012-05-25 | 2013-11-28 | 株式会社村田製作所 | 垂直共振面発光レーザ |
JP6020560B2 (ja) * | 2012-05-25 | 2016-11-02 | 株式会社村田製作所 | 垂直共振面発光レーザ素子の実装方法、垂直共振面発光レーザアレイ素子の実装方法、垂直共振面発光レーザ素子、垂直共振面発光レーザアレイ素子 |
JP2016517632A (ja) * | 2013-03-13 | 2016-06-16 | シーゲイト テクノロジー エルエルシーSeagate Technology LLC | トレンチ領域に配置されたカソード金属層を備える半導体レーザ |
JP6539980B2 (ja) * | 2014-10-22 | 2019-07-10 | 富士ゼロックス株式会社 | 面発光型半導体レーザ素子および面発光型半導体レーザ素子の製造方法 |
JP6958592B2 (ja) * | 2014-10-22 | 2021-11-02 | 富士フイルムビジネスイノベーション株式会社 | 面発光型半導体レーザ素子 |
US11637227B2 (en) | 2017-01-25 | 2023-04-25 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device including multiple distributed bragg reflector layers |
TWI710187B (zh) * | 2017-02-09 | 2020-11-11 | 光環科技股份有限公司 | 垂直共振腔面射雷射結構及製法 |
EP3419123A1 (de) * | 2017-06-22 | 2018-12-26 | Koninklijke Philips N.V. | Oberflächenemittierender laser mit vertikalem resonator (vcsel) mit verbessertem verstärkungsumschaltverhalten |
US11165224B2 (en) * | 2017-06-26 | 2021-11-02 | Mellanox Technologies, Ltd. | Vertical-cavity surface-emitting laser layout for high bandwidth output |
JP2019033152A (ja) * | 2017-08-07 | 2019-02-28 | 住友電気工業株式会社 | 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法 |
WO2019036383A1 (en) * | 2017-08-14 | 2019-02-21 | Trilumina Corp. | VCSEL MATRIX COMPATIBLE WITH SURFACE MOUNTING |
US10305254B2 (en) * | 2017-09-18 | 2019-05-28 | Finisar Corporation | VCSEL with elliptical aperture having reduced rin |
JP2021022613A (ja) * | 2019-07-25 | 2021-02-18 | 住友電気工業株式会社 | 面発光レーザおよびその製造方法 |
US11437785B2 (en) | 2019-09-23 | 2022-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | VCSEL with self-aligned microlens to improve beam divergence |
EP3883073B1 (de) | 2020-03-20 | 2022-09-07 | TRUMPF Photonic Components GmbH | Verfahren zur herstellung eines elektrischen metallkontakts und verfahren zur herstellung eines oberflächenemittierenden lasers mit vertikalem resonator |
JP2022043575A (ja) * | 2020-09-04 | 2022-03-16 | 住友電気工業株式会社 | 面発光半導体レーザ |
CN112382926B (zh) * | 2020-10-27 | 2022-03-18 | 厦门市三安集成电路有限公司 | 一种低电容的垂直腔面发射激光器及制作方法 |
CN115117735A (zh) * | 2021-03-17 | 2022-09-27 | 上海禾赛科技有限公司 | 激光器、光源模组及激光雷达 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6069908A (en) * | 1998-02-09 | 2000-05-30 | Hewlwtt-Packard Company | N-drive or P-drive VCSEL array |
US5991326A (en) * | 1998-04-14 | 1999-11-23 | Bandwidth9, Inc. | Lattice-relaxed verticle optical cavities |
US6465811B1 (en) * | 1999-07-12 | 2002-10-15 | Gore Enterprise Holdings, Inc. | Low-capacitance bond pads for high speed devices |
DE10012869C2 (de) * | 2000-03-16 | 2002-05-29 | Infineon Technologies Ag | Vertikalresonator-Laserdiode mit koplanaren elektrischen Anschlußkontakten und Verfahren zu ihrer Herstellung |
US6658040B1 (en) * | 2000-07-28 | 2003-12-02 | Agilent Technologies, Inc. | High speed VCSEL |
DE10038235A1 (de) * | 2000-08-04 | 2002-02-21 | Osram Opto Semiconductors Gmbh | Oberflächenemittierender Laser mit seitlicher Strominjektion |
US6687268B2 (en) * | 2001-03-26 | 2004-02-03 | Seiko Epson Corporation | Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode |
-
2002
- 2002-04-25 AT AT02009477T patent/ATE342596T1/de not_active IP Right Cessation
- 2002-04-25 DE DE60215303T patent/DE60215303D1/de not_active Expired - Lifetime
- 2002-04-25 EP EP02009477A patent/EP1357648B1/de not_active Expired - Lifetime
-
2003
- 2003-04-24 US US10/422,397 patent/US7061956B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1357648A1 (de) | 2003-10-29 |
US20030231682A1 (en) | 2003-12-18 |
EP1357648B1 (de) | 2006-10-11 |
US7061956B2 (en) | 2006-06-13 |
ATE342596T1 (de) | 2006-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |