DE60215303D1 - Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger Parasitärkapazität - Google Patents

Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger Parasitärkapazität

Info

Publication number
DE60215303D1
DE60215303D1 DE60215303T DE60215303T DE60215303D1 DE 60215303 D1 DE60215303 D1 DE 60215303D1 DE 60215303 T DE60215303 T DE 60215303T DE 60215303 T DE60215303 T DE 60215303T DE 60215303 D1 DE60215303 D1 DE 60215303D1
Authority
DE
Germany
Prior art keywords
surface emitting
vertical cavity
emitting laser
cavity surface
high speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60215303T
Other languages
English (en)
Inventor
Sven Dr Eitel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avalon Photonics AG
Original Assignee
Avalon Photonics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avalon Photonics AG filed Critical Avalon Photonics AG
Application granted granted Critical
Publication of DE60215303D1 publication Critical patent/DE60215303D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60215303T 2002-04-25 2002-04-25 Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger Parasitärkapazität Expired - Lifetime DE60215303D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02009477A EP1357648B1 (de) 2002-04-25 2002-04-25 Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger Parasitärkapazität

Publications (1)

Publication Number Publication Date
DE60215303D1 true DE60215303D1 (de) 2006-11-23

Family

ID=28685908

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60215303T Expired - Lifetime DE60215303D1 (de) 2002-04-25 2002-04-25 Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger Parasitärkapazität

Country Status (4)

Country Link
US (1) US7061956B2 (de)
EP (1) EP1357648B1 (de)
AT (1) ATE342596T1 (de)
DE (1) DE60215303D1 (de)

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JP3580803B2 (ja) * 2002-08-09 2004-10-27 沖電気工業株式会社 半導体装置
DE102004032696A1 (de) * 2004-07-06 2006-02-16 Universität Ulm Oberflächenemittierender Halbleiterlaser mit lateraler Wärmeabfuhr
US7873090B2 (en) * 2005-09-13 2011-01-18 Panasonic Corporation Surface emitting laser, photodetector and optical communication system using the same
JP4892940B2 (ja) * 2005-11-29 2012-03-07 富士ゼロックス株式会社 面発光型半導体レーザ装置およびその製造方法
US7505503B2 (en) * 2007-02-23 2009-03-17 Cosemi Technologies, Inc. Vertical cavity surface emitting laser (VCSEL) and related method
US8049957B2 (en) * 2007-11-06 2011-11-01 Northrop Grumman Systems Corporation Scalable semiconductor waveguide amplifier
JP2009246291A (ja) 2008-03-31 2009-10-22 Furukawa Electric Co Ltd:The 面発光レーザアレイ素子
JP5466712B2 (ja) * 2009-11-30 2014-04-09 株式会社日立製作所 表面出射型レーザ
JP2012248812A (ja) * 2011-05-31 2012-12-13 Sumitomo Electric Ind Ltd 半導体光集積素子の製造方法
US8923357B2 (en) 2011-09-13 2014-12-30 Seagate Technology Llc Semiconductor laser with cathode metal layer disposed in trench region
WO2013176201A1 (ja) * 2012-05-25 2013-11-28 株式会社村田製作所 垂直共振面発光レーザ
JP6020560B2 (ja) * 2012-05-25 2016-11-02 株式会社村田製作所 垂直共振面発光レーザ素子の実装方法、垂直共振面発光レーザアレイ素子の実装方法、垂直共振面発光レーザ素子、垂直共振面発光レーザアレイ素子
JP2016517632A (ja) * 2013-03-13 2016-06-16 シーゲイト テクノロジー エルエルシーＳｅａｇａｔｅ Ｔｅｃｈｎｏｌｏｇｙ ＬＬＣ トレンチ領域に配置されたカソード金属層を備える半導体レーザ
JP6539980B2 (ja) * 2014-10-22 2019-07-10 富士ゼロックス株式会社 面発光型半導体レーザ素子および面発光型半導体レーザ素子の製造方法
JP6958592B2 (ja) * 2014-10-22 2021-11-02 富士フイルムビジネスイノベーション株式会社 面発光型半導体レーザ素子
US11637227B2 (en) 2017-01-25 2023-04-25 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device including multiple distributed bragg reflector layers
TWI710187B (zh) * 2017-02-09 2020-11-11 光環科技股份有限公司 垂直共振腔面射雷射結構及製法
EP3419123A1 (de) * 2017-06-22 2018-12-26 Koninklijke Philips N.V. Oberflächenemittierender laser mit vertikalem resonator (vcsel) mit verbessertem verstärkungsumschaltverhalten
US11165224B2 (en) * 2017-06-26 2021-11-02 Mellanox Technologies, Ltd. Vertical-cavity surface-emitting laser layout for high bandwidth output
JP2019033152A (ja) * 2017-08-07 2019-02-28 住友電気工業株式会社 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
WO2019036383A1 (en) * 2017-08-14 2019-02-21 Trilumina Corp. VCSEL MATRIX COMPATIBLE WITH SURFACE MOUNTING
US10305254B2 (en) * 2017-09-18 2019-05-28 Finisar Corporation VCSEL with elliptical aperture having reduced rin
JP2021022613A (ja) * 2019-07-25 2021-02-18 住友電気工業株式会社 面発光レーザおよびその製造方法
US11437785B2 (en) 2019-09-23 2022-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. VCSEL with self-aligned microlens to improve beam divergence
EP3883073B1 (de) 2020-03-20 2022-09-07 TRUMPF Photonic Components GmbH Verfahren zur herstellung eines elektrischen metallkontakts und verfahren zur herstellung eines oberflächenemittierenden lasers mit vertikalem resonator
JP2022043575A (ja) * 2020-09-04 2022-03-16 住友電気工業株式会社 面発光半導体レーザ
CN112382926B (zh) * 2020-10-27 2022-03-18 厦门市三安集成电路有限公司 一种低电容的垂直腔面发射激光器及制作方法
CN115117735A (zh) * 2021-03-17 2022-09-27 上海禾赛科技有限公司 激光器、光源模组及激光雷达

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069908A (en) * 1998-02-09 2000-05-30 Hewlwtt-Packard Company N-drive or P-drive VCSEL array
US5991326A (en) * 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6465811B1 (en) * 1999-07-12 2002-10-15 Gore Enterprise Holdings, Inc. Low-capacitance bond pads for high speed devices
DE10012869C2 (de) * 2000-03-16 2002-05-29 Infineon Technologies Ag Vertikalresonator-Laserdiode mit koplanaren elektrischen Anschlußkontakten und Verfahren zu ihrer Herstellung
US6658040B1 (en) * 2000-07-28 2003-12-02 Agilent Technologies, Inc. High speed VCSEL
DE10038235A1 (de) * 2000-08-04 2002-02-21 Osram Opto Semiconductors Gmbh Oberflächenemittierender Laser mit seitlicher Strominjektion
US6687268B2 (en) * 2001-03-26 2004-02-03 Seiko Epson Corporation Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode

Also Published As

Publication number Publication date
EP1357648A1 (de) 2003-10-29
US20030231682A1 (en) 2003-12-18
EP1357648B1 (de) 2006-10-11
US7061956B2 (en) 2006-06-13
ATE342596T1 (de) 2006-11-15

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