DE60210796T2 - Verstärkerleistungs-detektionsschaltkreise - Google Patents
Verstärkerleistungs-detektionsschaltkreise Download PDFInfo
- Publication number
- DE60210796T2 DE60210796T2 DE60210796T DE60210796T DE60210796T2 DE 60210796 T2 DE60210796 T2 DE 60210796T2 DE 60210796 T DE60210796 T DE 60210796T DE 60210796 T DE60210796 T DE 60210796T DE 60210796 T2 DE60210796 T2 DE 60210796T2
- Authority
- DE
- Germany
- Prior art keywords
- circuit
- diode
- signal
- output signal
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 title claims description 29
- 239000003990 capacitor Substances 0.000 claims description 17
- 239000002131 composite material Substances 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims 1
- 230000002787 reinforcement Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
- H03F1/0272—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the output signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Transmitters (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/952,524 US7190935B2 (en) | 2001-09-14 | 2001-09-14 | Amplifier power detection circuitry |
| US952524 | 2001-09-14 | ||
| PCT/US2002/028622 WO2003026333A1 (en) | 2001-09-14 | 2002-09-10 | Amplifier power detection circuitry |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60210796D1 DE60210796D1 (de) | 2006-05-24 |
| DE60210796T2 true DE60210796T2 (de) | 2006-12-28 |
Family
ID=25492989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60210796T Expired - Lifetime DE60210796T2 (de) | 2001-09-14 | 2002-09-10 | Verstärkerleistungs-detektionsschaltkreise |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7190935B2 (enExample) |
| EP (1) | EP1437023B1 (enExample) |
| JP (1) | JP4139329B2 (enExample) |
| DE (1) | DE60210796T2 (enExample) |
| WO (1) | WO2003026333A1 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6701138B2 (en) * | 2001-06-11 | 2004-03-02 | Rf Micro Devices, Inc. | Power amplifier control |
| US6957092B2 (en) * | 2002-12-30 | 2005-10-18 | Motorola, Inc. | Disposable device with removable radio module |
| US7010330B1 (en) | 2003-03-01 | 2006-03-07 | Theta Microelectronics, Inc. | Power dissipation reduction in wireless transceivers |
| US6969978B2 (en) * | 2003-03-17 | 2005-11-29 | Rf Micro Devices, Inc. | DC-DC converter with reduced electromagnetic interference |
| US20050032499A1 (en) * | 2003-08-08 | 2005-02-10 | Cho Jin Wook | Radio frequency power detecting circuit and method therefor |
| US20050037716A1 (en) * | 2003-08-12 | 2005-02-17 | Motorola, Inc. | Apparatus and method for wideband integrated radio frequency detection |
| US6998919B2 (en) * | 2003-10-22 | 2006-02-14 | Rf Micro Devices, Inc. | Temperature compensated power amplifier power control |
| US6980039B1 (en) | 2004-03-03 | 2005-12-27 | Rf Micro Devices, Inc. | DC-DC converter with noise spreading to meet spectral mask requirements |
| US7053713B1 (en) | 2004-06-02 | 2006-05-30 | Rf Micro Devices, Inc. | Multi-phase switching power supply having both voltage and current feedback loops |
| US7301400B1 (en) | 2004-06-02 | 2007-11-27 | Rf Micro Devices, Inc. | Multi-phase switching power supply for mobile telephone applications |
| US7193459B1 (en) | 2004-06-23 | 2007-03-20 | Rf Micro Devices, Inc. | Power amplifier control technique for enhanced efficiency |
| US7109791B1 (en) | 2004-07-09 | 2006-09-19 | Rf Micro Devices, Inc. | Tailored collector voltage to minimize variation in AM to PM distortion in a power amplifier |
| WO2006018784A2 (en) * | 2004-08-16 | 2006-02-23 | Koninklijke Philips Electronics N.V. | High accuracy power detector for handset applications |
| US7132891B1 (en) | 2004-08-17 | 2006-11-07 | Rf Micro Devices, Inc. | Power amplifier control using a switching power supply |
| US7340235B1 (en) * | 2004-08-20 | 2008-03-04 | Rf Micro Devices, Inc. | System for limiting current in an output stage of a power amplifier |
| US7167054B1 (en) | 2004-12-02 | 2007-01-23 | Rf Micro Devices, Inc. | Reconfigurable power control for a mobile terminal |
| US7256650B1 (en) | 2005-02-28 | 2007-08-14 | Rf Micro Devices, Inc. | VSWR tolerant power detector |
| US7336127B2 (en) * | 2005-06-10 | 2008-02-26 | Rf Micro Devices, Inc. | Doherty amplifier configuration for a collector controlled power amplifier |
| US7671684B2 (en) * | 2005-07-05 | 2010-03-02 | Japan Radio Co., Ltd. | FET bias circuit |
| US8700093B2 (en) * | 2005-09-26 | 2014-04-15 | 8631654 Canada Inc. | Wireless communication base station with current limiting capability |
| US20070071047A1 (en) * | 2005-09-29 | 2007-03-29 | Cymer, Inc. | 6K pulse repetition rate and above gas discharge laser system solid state pulse power system improvements |
| US7330071B1 (en) | 2005-10-19 | 2008-02-12 | Rf Micro Devices, Inc. | High efficiency radio frequency power amplifier having an extended dynamic range |
| US7551027B2 (en) * | 2007-03-09 | 2009-06-23 | Tri Quint Semiconductor, Inc. | RF power amplifier mirror circuit for sensing current |
| JP4685836B2 (ja) * | 2007-05-28 | 2011-05-18 | パナソニック株式会社 | 高周波電力増幅器 |
| US7852063B2 (en) * | 2008-06-04 | 2010-12-14 | Silicon Storage Technology, Inc. | Integrated power detector with temperature compensation for fully-closed loop control |
| US8027648B2 (en) * | 2009-04-29 | 2011-09-27 | Lockheed Martin Corporation | Radio frequency power monitor |
| JP2011030110A (ja) * | 2009-07-28 | 2011-02-10 | Panasonic Corp | 半導体装置およびそれを用いた高周波スイッチ並びに高周波モジュール |
| CN107110898B (zh) * | 2014-12-22 | 2022-06-07 | 美高森美公司 | 对数线性功率检测器 |
| US12273072B2 (en) * | 2021-12-29 | 2025-04-08 | Qualcomm Incorporated | Envelope detector with clamping circuitry |
| CN118473336B (zh) * | 2024-07-15 | 2024-10-11 | 苏州悉芯射频微电子有限公司 | 一种应用于功率放大器的功率检测器 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3109992A (en) * | 1958-01-23 | 1963-11-05 | Collins Radio Co | Temperature-stabilized and distortionless diode detector |
| US3449680A (en) * | 1966-03-29 | 1969-06-10 | Motorola Inc | Transistor protection circuit |
| US4122400A (en) * | 1976-11-08 | 1978-10-24 | Rca Corporation | Amplifier protection circuit |
| US4233474A (en) * | 1978-01-10 | 1980-11-11 | Nippon Electric Co., Ltd. | Telephone transmitter amplifier |
| US4523155A (en) * | 1983-05-04 | 1985-06-11 | Motorola, Inc. | Temperature compensated automatic output control circuitry for RF signal power amplifiers with wide dynamic range |
| US4924194A (en) * | 1989-05-19 | 1990-05-08 | Motorola, Inc. | RF power amplifier |
| JPH03258121A (ja) * | 1990-03-08 | 1991-11-18 | Oki Electric Ind Co Ltd | 検波回路 |
| US5126688A (en) * | 1990-03-20 | 1992-06-30 | Oki Electric Co., Ltd. | Power amplifying apparatus for wireless transmitter |
| JPH0423506A (ja) * | 1990-05-17 | 1992-01-27 | Nec Corp | Agc検波回路 |
| JPH0440105A (ja) * | 1990-06-06 | 1992-02-10 | Oki Electric Ind Co Ltd | 線形化増幅回路 |
| KR960000775B1 (ko) * | 1990-10-19 | 1996-01-12 | 닛본덴기 가부시끼가이샤 | 고주파 전력 증폭기의 출력레벨 제어회로 |
| TW225619B (enExample) * | 1991-07-19 | 1994-06-21 | Nippon Electric Co | |
| US5204614A (en) | 1991-08-14 | 1993-04-20 | Hewlett-Packard Company | Broad-band microwave power sensor using diodes above their resonant frequency |
| JPH06177780A (ja) * | 1992-12-07 | 1994-06-24 | Uniden Corp | 送信出力安定回路 |
| US5608353A (en) * | 1995-03-29 | 1997-03-04 | Rf Micro Devices, Inc. | HBT power amplifier |
| JP3223750B2 (ja) * | 1995-03-31 | 2001-10-29 | 株式会社日立製作所 | 出力制御電力増幅器、無線通信端末及び無線通信基地局 |
| US5678209A (en) * | 1995-03-31 | 1997-10-14 | Lucent Technologies Inc. | Transmit power level detection circuit with enhanced gain characteristics |
| US6434374B1 (en) * | 1996-03-29 | 2002-08-13 | Thomson Licensing S.A. | Apparatus for controlling the conversion gain of a down converter |
| JP3093638B2 (ja) * | 1996-06-18 | 2000-10-03 | 埼玉日本電気株式会社 | 出力レベル制御回路 |
| GB2318004A (en) * | 1996-10-01 | 1998-04-08 | Nokia Mobile Phones Ltd | A diode detector |
| US5923153A (en) * | 1997-02-24 | 1999-07-13 | Lucent Technologies Inc. | Circuit for moderating a peak reverse recovery current of a rectifier and method of operation thereof |
| US5956627A (en) * | 1997-07-08 | 1999-09-21 | Uniden San Diego Research & Development Center, Inc. | Temperature compensated power control circuit |
| US6108527A (en) * | 1997-07-31 | 2000-08-22 | Lucent Technologies, Inc. | Wide range multiple band RF power detector |
| US6272336B1 (en) * | 1998-12-30 | 2001-08-07 | Samsung Electronics Co., Ltd. | Traffic-weighted closed loop power detection system for use with an RF power amplifier and method of operation |
| JP3235580B2 (ja) * | 1999-01-08 | 2001-12-04 | 日本電気株式会社 | 高効率増幅器 |
| US6262630B1 (en) * | 1999-06-04 | 2001-07-17 | Telefonaktiebolaget Lm Ericsson (Publ) | Rapidly-responding diode detector with temperature compensation |
| US6307364B1 (en) * | 1999-08-27 | 2001-10-23 | Rf Micro Devices, Inc. | Power sensor for RF power amplifier |
| US6211735B1 (en) * | 2000-01-21 | 2001-04-03 | Harris Corporation | RF power amplifier having improved power supply for RF drive circuits |
| US6265943B1 (en) | 2000-01-27 | 2001-07-24 | Rf Micro Devices, Inc. | Integrated RF power sensor that compensates for bias changes |
| US6624702B1 (en) * | 2002-04-05 | 2003-09-23 | Rf Micro Devices, Inc. | Automatic Vcc control for optimum power amplifier efficiency |
| US6822515B2 (en) * | 2002-07-19 | 2004-11-23 | Ikuroh Ichitsubo | Accurate power sensing circuit for power amplifiers |
-
2001
- 2001-09-14 US US09/952,524 patent/US7190935B2/en not_active Expired - Lifetime
-
2002
- 2002-09-10 JP JP2003529795A patent/JP4139329B2/ja not_active Expired - Fee Related
- 2002-09-10 WO PCT/US2002/028622 patent/WO2003026333A1/en not_active Ceased
- 2002-09-10 DE DE60210796T patent/DE60210796T2/de not_active Expired - Lifetime
- 2002-09-10 EP EP02798939A patent/EP1437023B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003026333A1 (en) | 2003-03-27 |
| US20030054778A1 (en) | 2003-03-20 |
| EP1437023B1 (en) | 2006-04-19 |
| EP1437023A1 (en) | 2004-07-14 |
| US7190935B2 (en) | 2007-03-13 |
| JP4139329B2 (ja) | 2008-08-27 |
| JP2005528001A (ja) | 2005-09-15 |
| DE60210796D1 (de) | 2006-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |