JP4139329B2 - 増幅器パワー検出回路 - Google Patents

増幅器パワー検出回路 Download PDF

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Publication number
JP4139329B2
JP4139329B2 JP2003529795A JP2003529795A JP4139329B2 JP 4139329 B2 JP4139329 B2 JP 4139329B2 JP 2003529795 A JP2003529795 A JP 2003529795A JP 2003529795 A JP2003529795 A JP 2003529795A JP 4139329 B2 JP4139329 B2 JP 4139329B2
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Japan
Prior art keywords
signal
output
circuit
transistor
diode
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JP2003529795A
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Japanese (ja)
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JP2005528001A5 (enExample
JP2005528001A (ja
Inventor
ヘクト,ジエームズ・バー
Original Assignee
アール・エフ・マイクロ・デイバイセス・インコーポレイテツド
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0272Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the output signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3036Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/18Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/372Noise reduction and elimination in amplifier
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • H04B2001/0408Circuits with power amplifiers
    • H04B2001/0416Circuits with power amplifiers having gain or transmission power control

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
JP2003529795A 2001-09-14 2002-09-10 増幅器パワー検出回路 Expired - Fee Related JP4139329B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/952,524 US7190935B2 (en) 2001-09-14 2001-09-14 Amplifier power detection circuitry
PCT/US2002/028622 WO2003026333A1 (en) 2001-09-14 2002-09-10 Amplifier power detection circuitry

Publications (3)

Publication Number Publication Date
JP2005528001A JP2005528001A (ja) 2005-09-15
JP2005528001A5 JP2005528001A5 (enExample) 2006-01-05
JP4139329B2 true JP4139329B2 (ja) 2008-08-27

Family

ID=25492989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003529795A Expired - Fee Related JP4139329B2 (ja) 2001-09-14 2002-09-10 増幅器パワー検出回路

Country Status (5)

Country Link
US (1) US7190935B2 (enExample)
EP (1) EP1437023B1 (enExample)
JP (1) JP4139329B2 (enExample)
DE (1) DE60210796T2 (enExample)
WO (1) WO2003026333A1 (enExample)

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US6969978B2 (en) * 2003-03-17 2005-11-29 Rf Micro Devices, Inc. DC-DC converter with reduced electromagnetic interference
US20050032499A1 (en) * 2003-08-08 2005-02-10 Cho Jin Wook Radio frequency power detecting circuit and method therefor
US20050037716A1 (en) * 2003-08-12 2005-02-17 Motorola, Inc. Apparatus and method for wideband integrated radio frequency detection
US6998919B2 (en) * 2003-10-22 2006-02-14 Rf Micro Devices, Inc. Temperature compensated power amplifier power control
US6980039B1 (en) 2004-03-03 2005-12-27 Rf Micro Devices, Inc. DC-DC converter with noise spreading to meet spectral mask requirements
US7053713B1 (en) 2004-06-02 2006-05-30 Rf Micro Devices, Inc. Multi-phase switching power supply having both voltage and current feedback loops
US7301400B1 (en) 2004-06-02 2007-11-27 Rf Micro Devices, Inc. Multi-phase switching power supply for mobile telephone applications
US7193459B1 (en) 2004-06-23 2007-03-20 Rf Micro Devices, Inc. Power amplifier control technique for enhanced efficiency
US7109791B1 (en) 2004-07-09 2006-09-19 Rf Micro Devices, Inc. Tailored collector voltage to minimize variation in AM to PM distortion in a power amplifier
WO2006018784A2 (en) * 2004-08-16 2006-02-23 Koninklijke Philips Electronics N.V. High accuracy power detector for handset applications
US7132891B1 (en) 2004-08-17 2006-11-07 Rf Micro Devices, Inc. Power amplifier control using a switching power supply
US7340235B1 (en) * 2004-08-20 2008-03-04 Rf Micro Devices, Inc. System for limiting current in an output stage of a power amplifier
US7167054B1 (en) 2004-12-02 2007-01-23 Rf Micro Devices, Inc. Reconfigurable power control for a mobile terminal
US7256650B1 (en) 2005-02-28 2007-08-14 Rf Micro Devices, Inc. VSWR tolerant power detector
US7336127B2 (en) * 2005-06-10 2008-02-26 Rf Micro Devices, Inc. Doherty amplifier configuration for a collector controlled power amplifier
US7671684B2 (en) * 2005-07-05 2010-03-02 Japan Radio Co., Ltd. FET bias circuit
US8700093B2 (en) * 2005-09-26 2014-04-15 8631654 Canada Inc. Wireless communication base station with current limiting capability
US20070071047A1 (en) * 2005-09-29 2007-03-29 Cymer, Inc. 6K pulse repetition rate and above gas discharge laser system solid state pulse power system improvements
US7330071B1 (en) 2005-10-19 2008-02-12 Rf Micro Devices, Inc. High efficiency radio frequency power amplifier having an extended dynamic range
US7551027B2 (en) * 2007-03-09 2009-06-23 Tri Quint Semiconductor, Inc. RF power amplifier mirror circuit for sensing current
JP4685836B2 (ja) * 2007-05-28 2011-05-18 パナソニック株式会社 高周波電力増幅器
US7852063B2 (en) * 2008-06-04 2010-12-14 Silicon Storage Technology, Inc. Integrated power detector with temperature compensation for fully-closed loop control
US8027648B2 (en) * 2009-04-29 2011-09-27 Lockheed Martin Corporation Radio frequency power monitor
JP2011030110A (ja) * 2009-07-28 2011-02-10 Panasonic Corp 半導体装置およびそれを用いた高周波スイッチ並びに高周波モジュール
WO2016106162A1 (en) * 2014-12-22 2016-06-30 Microsemi Corporation Log-linear power detector
US12273072B2 (en) * 2021-12-29 2025-04-08 Qualcomm Incorporated Envelope detector with clamping circuitry
CN118473336B (zh) * 2024-07-15 2024-10-11 苏州悉芯射频微电子有限公司 一种应用于功率放大器的功率检测器

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JP3093638B2 (ja) * 1996-06-18 2000-10-03 埼玉日本電気株式会社 出力レベル制御回路
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US6262630B1 (en) * 1999-06-04 2001-07-17 Telefonaktiebolaget Lm Ericsson (Publ) Rapidly-responding diode detector with temperature compensation
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Also Published As

Publication number Publication date
EP1437023A1 (en) 2004-07-14
DE60210796T2 (de) 2006-12-28
DE60210796D1 (de) 2006-05-24
WO2003026333A1 (en) 2003-03-27
US7190935B2 (en) 2007-03-13
JP2005528001A (ja) 2005-09-15
US20030054778A1 (en) 2003-03-20
EP1437023B1 (en) 2006-04-19

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