DE60209802D1 - Verfahren zum erhalten eines selbsttragenden halbleiterdünnfilms für elektronische schaltungen - Google Patents
Verfahren zum erhalten eines selbsttragenden halbleiterdünnfilms für elektronische schaltungenInfo
- Publication number
- DE60209802D1 DE60209802D1 DE60209802T DE60209802T DE60209802D1 DE 60209802 D1 DE60209802 D1 DE 60209802D1 DE 60209802 T DE60209802 T DE 60209802T DE 60209802 T DE60209802 T DE 60209802T DE 60209802 D1 DE60209802 D1 DE 60209802D1
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- self
- front portion
- obtaining
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title 1
- 239000000463 material Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0110813 | 2001-08-14 | ||
FR0110813A FR2828762B1 (fr) | 2001-08-14 | 2001-08-14 | Procede d'obtention d'une couche mince d'un materiau semi-conducteur supportant au moins un composant et/ou circuit electronique |
PCT/FR2002/002879 WO2003017357A1 (fr) | 2001-08-14 | 2002-08-14 | Procede d'obtention d'une couche mince semiconductrice auto-portee pour circuits electroniques |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60209802D1 true DE60209802D1 (de) | 2006-05-04 |
DE60209802T2 DE60209802T2 (de) | 2006-11-09 |
Family
ID=8866530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60209802T Expired - Lifetime DE60209802T2 (de) | 2001-08-14 | 2002-08-14 | Verfahren zum erhalten eines selbsttragenden halbleiterdünnfilms für elektronische schaltungen |
Country Status (9)
Country | Link |
---|---|
US (1) | US20040175902A1 (de) |
EP (1) | EP1423873B1 (de) |
JP (1) | JP2005500692A (de) |
KR (1) | KR100753741B1 (de) |
CN (1) | CN100511635C (de) |
AT (1) | ATE320083T1 (de) |
DE (1) | DE60209802T2 (de) |
FR (1) | FR2828762B1 (de) |
WO (1) | WO2003017357A1 (de) |
Families Citing this family (189)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1962340A3 (de) | 2004-11-09 | 2009-12-23 | S.O.I. TEC Silicon | Verfahren zur Herstellung von zusammengesetzten Wafern |
US7387946B2 (en) * | 2005-06-07 | 2008-06-17 | Freescale Semiconductor, Inc. | Method of fabricating a substrate for a planar, double-gated, transistor process |
JP5388503B2 (ja) * | 2007-08-24 | 2014-01-15 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
US20090051046A1 (en) * | 2007-08-24 | 2009-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method for the same |
KR100940660B1 (ko) * | 2007-12-24 | 2010-02-05 | 주식회사 동부하이텍 | 반도체칩의 제조방법 |
US7820527B2 (en) * | 2008-02-20 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Cleave initiation using varying ion implant dose |
US9711407B2 (en) * | 2009-04-14 | 2017-07-18 | Monolithic 3D Inc. | Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer |
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Publication number | Priority date | Publication date | Assignee | Title |
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FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US5827751A (en) * | 1991-12-06 | 1998-10-27 | Picogiga Societe Anonyme | Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically |
US6107213A (en) * | 1996-02-01 | 2000-08-22 | Sony Corporation | Method for making thin film semiconductor |
FR2747506B1 (fr) * | 1996-04-11 | 1998-05-15 | Commissariat Energie Atomique | Procede d'obtention d'un film mince de materiau semiconducteur comprenant notamment des composants electroniques |
FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
US6191007B1 (en) * | 1997-04-28 | 2001-02-20 | Denso Corporation | Method for manufacturing a semiconductor substrate |
US5920764A (en) * | 1997-09-30 | 1999-07-06 | International Business Machines Corporation | Process for restoring rejected wafers in line for reuse as new |
US6291314B1 (en) * | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Controlled cleavage process and device for patterned films using a release layer |
FR2789518B1 (fr) * | 1999-02-10 | 2003-06-20 | Commissariat Energie Atomique | Structure multicouche a contraintes internes controlees et procede de realisation d'une telle structure |
US6287941B1 (en) * | 1999-04-21 | 2001-09-11 | Silicon Genesis Corporation | Surface finishing of SOI substrates using an EPI process |
US6287891B1 (en) * | 2000-04-05 | 2001-09-11 | Hrl Laboratories, Llc | Method for transferring semiconductor device layers to different substrates |
-
2001
- 2001-08-14 FR FR0110813A patent/FR2828762B1/fr not_active Expired - Fee Related
-
2002
- 2002-08-14 WO PCT/FR2002/002879 patent/WO2003017357A1/fr active IP Right Grant
- 2002-08-14 EP EP02794814A patent/EP1423873B1/de not_active Expired - Lifetime
- 2002-08-14 AT AT02794814T patent/ATE320083T1/de not_active IP Right Cessation
- 2002-08-14 KR KR1020047002196A patent/KR100753741B1/ko not_active IP Right Cessation
- 2002-08-14 DE DE60209802T patent/DE60209802T2/de not_active Expired - Lifetime
- 2002-08-14 JP JP2003522163A patent/JP2005500692A/ja active Pending
- 2002-08-14 CN CNB028203593A patent/CN100511635C/zh not_active Expired - Fee Related
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2004
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Also Published As
Publication number | Publication date |
---|---|
EP1423873A1 (de) | 2004-06-02 |
ATE320083T1 (de) | 2006-03-15 |
CN1568540A (zh) | 2005-01-19 |
JP2005500692A (ja) | 2005-01-06 |
EP1423873B1 (de) | 2006-03-08 |
FR2828762A1 (fr) | 2003-02-21 |
CN100511635C (zh) | 2009-07-08 |
WO2003017357A8 (fr) | 2003-04-03 |
KR20040028993A (ko) | 2004-04-03 |
US20040175902A1 (en) | 2004-09-09 |
KR100753741B1 (ko) | 2007-08-31 |
DE60209802T2 (de) | 2006-11-09 |
FR2828762B1 (fr) | 2003-12-05 |
WO2003017357A1 (fr) | 2003-02-27 |
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