DE602007012359D1 - Antireflexionsbeschichtungszusammensetzung und ver anwendung - Google Patents

Antireflexionsbeschichtungszusammensetzung und ver anwendung

Info

Publication number
DE602007012359D1
DE602007012359D1 DE602007012359T DE602007012359T DE602007012359D1 DE 602007012359 D1 DE602007012359 D1 DE 602007012359D1 DE 602007012359 T DE602007012359 T DE 602007012359T DE 602007012359 T DE602007012359 T DE 602007012359T DE 602007012359 D1 DE602007012359 D1 DE 602007012359D1
Authority
DE
Germany
Prior art keywords
coating composition
reflection coating
alkyl
aromatic group
relates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007012359T
Other languages
English (en)
Inventor
Wookyu Kim
Hengpeng Wu
David J Abdallah
Mark Neisser
Pinghung Lu
Ruzhi Zhang
Dalil M Rahman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
AZ Electronic Materials USA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials USA Corp filed Critical AZ Electronic Materials USA Corp
Publication of DE602007012359D1 publication Critical patent/DE602007012359D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE602007012359T 2006-10-18 2007-10-15 Antireflexionsbeschichtungszusammensetzung und ver anwendung Active DE602007012359D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/550,459 US7666575B2 (en) 2006-10-18 2006-10-18 Antireflective coating compositions
PCT/IB2007/003110 WO2008047217A2 (en) 2006-10-18 2007-10-15 Antireflective coating compositions

Publications (1)

Publication Number Publication Date
DE602007012359D1 true DE602007012359D1 (de) 2011-03-17

Family

ID=39253631

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007012359T Active DE602007012359D1 (de) 2006-10-18 2007-10-15 Antireflexionsbeschichtungszusammensetzung und ver anwendung

Country Status (10)

Country Link
US (1) US7666575B2 (de)
EP (1) EP2082287B1 (de)
JP (2) JP5418906B2 (de)
KR (1) KR101420460B1 (de)
CN (2) CN101529336B (de)
AT (1) ATE497608T1 (de)
DE (1) DE602007012359D1 (de)
MY (1) MY145768A (de)
TW (1) TWI408185B (de)
WO (1) WO2008047217A2 (de)

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TWI414893B (zh) * 2006-03-14 2013-11-11 Jsr Corp 底層膜形成用組成物及圖型之形成方法
US7666575B2 (en) * 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions
KR101220074B1 (ko) * 2010-09-01 2013-01-08 금호석유화학 주식회사 유기 반사 방지막용 흡광제 및 이를 포함하는 유기 반사 방지막용 조성물
US8623589B2 (en) * 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
JP2018025649A (ja) * 2016-08-09 2018-02-15 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 下層反射防止膜形成組成物
US20200348592A1 (en) * 2019-04-30 2020-11-05 Rohm And Haas Electronic Materials Llc Resist underlayer compositions and methods of forming patterns with such compositions
CN112680052B (zh) * 2020-12-23 2022-06-28 上海飞凯材料科技股份有限公司 一种抗反射涂料组合物及其应用
US20220406593A1 (en) * 2021-05-27 2022-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Coating composition for photolithography
CN115403976B (zh) * 2022-08-19 2023-04-18 嘉庚创新实验室 一种抗反射涂层组合物

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US4200729A (en) * 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4251665A (en) * 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0440374B1 (de) * 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemisch verstärktes Photolack-Material
US5187019A (en) * 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6114085A (en) * 1998-11-18 2000-09-05 Clariant Finance (Bvi) Limited Antireflective composition for a deep ultraviolet photoresist
GB2344104B (en) * 1998-11-27 2004-04-07 Hyundai Electronics Ind Photoresist composition comprising a cross-linker
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KR100832247B1 (ko) * 2002-11-27 2008-05-28 주식회사 동진쎄미켐 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성방법
JP2005010486A (ja) * 2003-06-19 2005-01-13 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法
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KR100570206B1 (ko) 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
KR20070029157A (ko) * 2004-03-12 2007-03-13 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 리소그래피 적용을 위한 열경화된 언더코트
US7816071B2 (en) * 2005-02-10 2010-10-19 Az Electronic Materials Usa Corp. Process of imaging a photoresist with multiple antireflective coatings
KR100732763B1 (ko) * 2005-10-31 2007-06-27 주식회사 하이닉스반도체 유기 반사 방지막 중합체, 이를 포함하는 유기 반사 방지막조성물 및 이를 이용한 포토레지스트의 패턴 형성 방법
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US20070298349A1 (en) * 2006-06-22 2007-12-27 Ruzhi Zhang Antireflective Coating Compositions Comprising Siloxane Polymer
US7666575B2 (en) * 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions

Also Published As

Publication number Publication date
TWI408185B (zh) 2013-09-11
EP2082287B1 (de) 2011-02-02
JP5418906B2 (ja) 2014-02-19
KR20090068332A (ko) 2009-06-26
ATE497608T1 (de) 2011-02-15
US7666575B2 (en) 2010-02-23
KR101420460B1 (ko) 2014-07-28
CN103353706A (zh) 2013-10-16
EP2082287A2 (de) 2009-07-29
MY145768A (en) 2012-04-13
WO2008047217A2 (en) 2008-04-24
US20080096125A1 (en) 2008-04-24
JP2010506992A (ja) 2010-03-04
WO2008047217A3 (en) 2008-07-03
JP2013156647A (ja) 2013-08-15
CN101529336B (zh) 2013-08-21
CN101529336A (zh) 2009-09-09
TW200831621A (en) 2008-08-01
WO2008047217A8 (en) 2009-04-23

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