DE602006018892D1 - Monolithisches einfrequenz-linearlaserbauelement und system damit - Google Patents

Monolithisches einfrequenz-linearlaserbauelement und system damit

Info

Publication number
DE602006018892D1
DE602006018892D1 DE602006018892T DE602006018892T DE602006018892D1 DE 602006018892 D1 DE602006018892 D1 DE 602006018892D1 DE 602006018892 T DE602006018892 T DE 602006018892T DE 602006018892 T DE602006018892 T DE 602006018892T DE 602006018892 D1 DE602006018892 D1 DE 602006018892D1
Authority
DE
Germany
Prior art keywords
medium
laser beam
monolithic
wavelength laser
infrequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006018892T
Other languages
English (en)
Inventor
Thierry Georges
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxxius SA
Original Assignee
Oxxius SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxxius SA filed Critical Oxxius SA
Publication of DE602006018892D1 publication Critical patent/DE602006018892D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/08022—Longitudinal modes
    • H01S3/08031—Single-mode emission
    • H01S3/08036—Single-mode emission using intracavity dispersive, polarising or birefringent elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0612—Non-homogeneous structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08054—Passive cavity elements acting on the polarization, e.g. a polarizer for branching or walk-off compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
    • H01S3/1673—YVO4 [YVO]

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
DE602006018892T 2005-04-15 2006-04-07 Monolithisches einfrequenz-linearlaserbauelement und system damit Active DE602006018892D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0503798A FR2884651B1 (fr) 2005-04-15 2005-04-15 "dispositif laser lineaire monolithique monofrequence, et systeme comprenant un tel dispositif"
PCT/FR2006/000770 WO2006108950A2 (fr) 2005-04-15 2006-04-07 Dispositif laser lineaire monolithique monofrequence, et system comprenant un tel dispositif.

Publications (1)

Publication Number Publication Date
DE602006018892D1 true DE602006018892D1 (de) 2011-01-27

Family

ID=35427984

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006018892T Active DE602006018892D1 (de) 2005-04-15 2006-04-07 Monolithisches einfrequenz-linearlaserbauelement und system damit

Country Status (9)

Country Link
US (1) US7804865B2 (de)
EP (1) EP1875567B8 (de)
JP (1) JP2008536322A (de)
CN (1) CN101199090B (de)
AT (1) ATE492052T1 (de)
DE (1) DE602006018892D1 (de)
FR (1) FR2884651B1 (de)
IL (1) IL186627A (de)
WO (1) WO2006108950A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007009659B4 (de) 2007-02-21 2024-05-16 Carl Zeiss Microscopy Gmbh Verwendung eines diodengepumpten Festkörperlasers und Laser-Scanning-Mikroskop mit einem UV-Beleuchtungsstrahlengang
JP5018685B2 (ja) * 2008-08-07 2012-09-05 株式会社島津製作所 光学素子および光学素子の製造方法
JP5343699B2 (ja) * 2009-05-18 2013-11-13 株式会社島津製作所 光共振装置
CN104409961A (zh) * 2014-11-07 2015-03-11 中国船舶重工集团公司第七一七研究所 一种线偏振输出的2μm激光器装置
US10746600B2 (en) * 2015-01-09 2020-08-18 California Institute Of Technology Dual wavelength context imaging Raman and fluorescence spectrometer

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4809291A (en) 1984-11-26 1989-02-28 Board Of Trustees, Of Leland Stanford Jr U. Diode pumped laser and doubling to obtain blue light
US5256164A (en) * 1988-02-02 1993-10-26 Massachusetts Institute Of Technology Method of fabricating a microchip laser
JP3066966B2 (ja) * 1988-02-29 2000-07-17 ソニー株式会社 レーザ光源
US5315433A (en) * 1991-02-28 1994-05-24 Fuji Photo Film Co., Ltd. Optical wavelength converting apparatus
US5164947A (en) * 1991-02-28 1992-11-17 Amoco Corporation Single-frequency, frequency doubled laser
JPH0794818A (ja) * 1993-09-24 1995-04-07 Fuji Photo Film Co Ltd 固体レーザー
JPH07131100A (ja) * 1993-11-08 1995-05-19 Sony Corp レーザ光発生装置
EP0712183B1 (de) * 1994-11-14 2002-08-21 Mitsui Chemicals, Inc. Wellenlängenstabilisierter Lichtquelle
JPH08213686A (ja) * 1994-11-14 1996-08-20 Mitsui Petrochem Ind Ltd 波長安定化光源
GB2300964B (en) * 1995-05-13 1999-11-10 I E Optomech Limited Monolithic laser
SE510442C2 (sv) * 1996-09-05 1999-05-25 Fredrik Laurell Mikrochipslaser
US5838713A (en) 1997-04-21 1998-11-17 Shimoji; Yutaka Continuously tunable blue microchip laser
US6154472A (en) * 1997-10-08 2000-11-28 Jds Uniphase Corporation High efficiency decoupled tuning configuration intracavity doubled laser and method
JP2000133863A (ja) * 1998-10-28 2000-05-12 Shimadzu Corp 固体レーザ装置
US6373865B1 (en) * 2000-02-01 2002-04-16 John E. Nettleton Pseudo-monolithic laser with an intracavity optical parametric oscillator
CN2501225Y (zh) * 2001-08-23 2002-07-17 中国科学院长春光学精密机械与物理研究所 半导体激光泵浦全固态低噪声内腔倍频激光谐振腔
KR20060121900A (ko) * 2003-09-22 2006-11-29 스네이크 크리크 레이저스 엘엘씨 다이오드 펌핑된 마이크로 레이저를 생산하기 위한 고밀도방법
FR2860928B1 (fr) * 2003-10-09 2006-02-03 Oxxius Sa Dispositif laser a solide monolithique pompe par diode laser, et procede mis en oeuvre dans un tel dispositif
US7260133B2 (en) * 2004-08-23 2007-08-21 Jds Uniphase Corporation Diode-pumped laser
US7471707B2 (en) * 2004-08-27 2008-12-30 Photop Technologies, Inc. Low noise, intra-cavity frequency-doubling micro chip laser with wide temperature range
US7535937B2 (en) * 2005-03-18 2009-05-19 Pavilion Integration Corporation Monolithic microchip laser with intracavity beam combining and sum frequency or difference frequency mixing

Also Published As

Publication number Publication date
WO2006108950A3 (fr) 2006-12-14
EP1875567B8 (de) 2011-03-30
IL186627A (en) 2011-06-30
WO2006108950A2 (fr) 2006-10-19
IL186627A0 (en) 2008-01-20
JP2008536322A (ja) 2008-09-04
EP1875567B1 (de) 2010-12-15
CN101199090A (zh) 2008-06-11
US7804865B2 (en) 2010-09-28
US20090041068A1 (en) 2009-02-12
FR2884651B1 (fr) 2007-11-30
FR2884651A1 (fr) 2006-10-20
ATE492052T1 (de) 2011-01-15
CN101199090B (zh) 2010-05-19
EP1875567A2 (de) 2008-01-09

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