DE602006002187D1 - Lichtemittierende Anzeigentafel - Google Patents

Lichtemittierende Anzeigentafel

Info

Publication number
DE602006002187D1
DE602006002187D1 DE602006002187T DE602006002187T DE602006002187D1 DE 602006002187 D1 DE602006002187 D1 DE 602006002187D1 DE 602006002187 T DE602006002187 T DE 602006002187T DE 602006002187 T DE602006002187 T DE 602006002187T DE 602006002187 D1 DE602006002187 D1 DE 602006002187D1
Authority
DE
Germany
Prior art keywords
light
display panel
emitting display
emitting
panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006002187T
Other languages
English (en)
Inventor
Samsung Sd Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung SDI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Publication of DE602006002187D1 publication Critical patent/DE602006002187D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
  • Thin Film Transistor (AREA)
DE602006002187T 2005-06-22 2006-06-22 Lichtemittierende Anzeigentafel Active DE602006002187D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050053975A KR100624314B1 (ko) 2005-06-22 2005-06-22 발광표시장치 및 박막트랜지스터

Publications (1)

Publication Number Publication Date
DE602006002187D1 true DE602006002187D1 (de) 2008-09-25

Family

ID=37026972

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006002187T Active DE602006002187D1 (de) 2005-06-22 2006-06-22 Lichtemittierende Anzeigentafel

Country Status (6)

Country Link
US (1) US9196747B2 (de)
EP (1) EP1737046B1 (de)
JP (1) JP2007005766A (de)
KR (1) KR100624314B1 (de)
CN (1) CN1885552B (de)
DE (1) DE602006002187D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100778514B1 (ko) 2006-08-09 2007-11-22 삼성에스디아이 주식회사 유기 발광 표시 장치
KR100786846B1 (ko) 2006-11-10 2007-12-20 삼성에스디아이 주식회사 유기전계발광표시장치 및 유기전계발광표시장치의 검출장치
JP2010039397A (ja) 2008-08-08 2010-02-18 Sony Corp 表示装置及び電子機器
KR20100036624A (ko) * 2008-09-30 2010-04-08 삼성전자주식회사 박막트랜지스터 기판 및 이를 갖는 유기발광 표시장치
JP5494115B2 (ja) * 2010-03-29 2014-05-14 ソニー株式会社 表示装置及び電子機器
KR101374477B1 (ko) * 2010-10-22 2014-03-14 엘지디스플레이 주식회사 유기발광다이오드 표시장치
WO2013015091A1 (en) * 2011-07-22 2013-01-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR101996038B1 (ko) * 2012-08-31 2019-07-03 엘지디스플레이 주식회사 평판표시장치
KR20150005105A (ko) * 2013-07-04 2015-01-14 삼성디스플레이 주식회사 표시 장치
KR20150054040A (ko) * 2013-11-08 2015-05-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이를 포함하는 유기 발광 표시 장치
KR102270081B1 (ko) 2014-09-16 2021-06-29 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102300026B1 (ko) * 2015-01-08 2021-09-09 삼성디스플레이 주식회사 표시 장치
JP6662665B2 (ja) * 2015-03-19 2020-03-11 株式会社半導体エネルギー研究所 液晶表示装置及び該液晶表示装置を用いた電子機器
CN106663697B (zh) * 2015-03-27 2019-11-12 堺显示器制品株式会社 薄膜晶体管及显示面板
CN107086227B (zh) * 2017-05-11 2020-02-21 京东方科技集团股份有限公司 发光电路、电子装置、薄膜晶体管及其制备方法
KR102420080B1 (ko) * 2017-05-19 2022-07-13 삼성디스플레이 주식회사 다채널 박막 트랜지스터 및 이를 포함하는 화소
KR20210142023A (ko) * 2020-05-14 2021-11-24 삼성디스플레이 주식회사 플렉서블 표시 장치

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US6229506B1 (en) * 1997-04-23 2001-05-08 Sarnoff Corporation Active matrix light emitting diode pixel structure and concomitant method
US6512269B1 (en) 2000-09-07 2003-01-28 International Business Machines Corporation High-voltage high-speed SOI MOSFET
JP4789369B2 (ja) * 2001-08-08 2011-10-12 株式会社半導体エネルギー研究所 表示装置及び電子機器
CN1207617C (zh) 2001-11-15 2005-06-22 Nec液晶技术株式会社 平面开关模式有源矩阵型液晶显示器件及其制造方法
JP2003241688A (ja) * 2002-02-18 2003-08-29 Matsushita Electric Ind Co Ltd 表示装置
WO2003081676A1 (fr) 2002-03-25 2003-10-02 Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center Transistor a film mince, systeme de circuit et afficheur a cristaux liquides
JP4900756B2 (ja) 2002-04-16 2012-03-21 セイコーエプソン株式会社 半導体装置の製造方法、電気光学装置、集積回路、および電子機器
US6933529B2 (en) 2002-07-11 2005-08-23 Lg. Philips Lcd Co., Ltd. Active matrix type organic light emitting diode device and thin film transistor thereof
JP3949040B2 (ja) 2002-09-25 2007-07-25 東北パイオニア株式会社 発光表示パネルの駆動装置
JP2004340981A (ja) * 2003-03-14 2004-12-02 Sony Corp 液晶表示装置
CN1328796C (zh) 2003-04-09 2007-07-25 友达光电股份有限公司 薄膜晶体管的双栅极布局结构
KR100560780B1 (ko) * 2003-07-07 2006-03-13 삼성에스디아이 주식회사 유기전계 발광표시장치의 화소회로 및 그의 구동방법
US6937215B2 (en) * 2003-11-03 2005-08-30 Wintek Corporation Pixel driving circuit of an organic light emitting diode display panel
KR100599726B1 (ko) * 2003-11-27 2006-07-12 삼성에스디아이 주식회사 발광 표시 장치 및 그 표시 패널과 구동 방법
KR100557731B1 (ko) * 2003-12-27 2006-03-06 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
KR100979263B1 (ko) 2003-12-29 2010-08-31 엘지디스플레이 주식회사 액티브 매트릭스형 유기전계발광 소자용 구동용박막트랜지스터 및 상기 구동용 박막트랜지스터를포함하는 액티브 매트릭스형 유기전계발광 소자
KR100684712B1 (ko) * 2004-03-09 2007-02-20 삼성에스디아이 주식회사 발광 표시 장치
KR101076424B1 (ko) * 2004-03-31 2011-10-25 엘지디스플레이 주식회사 일렉트로 루미네센스 패널의 프리차지 방법 및 장치
KR100592641B1 (ko) * 2004-07-28 2006-06-26 삼성에스디아이 주식회사 화소 회로 및 그것을 채용한 유기 발광 표시 장치
KR100602361B1 (ko) * 2004-09-22 2006-07-19 삼성에스디아이 주식회사 디멀티플렉서 및 이를 이용한 발광 표시장치와 그의구동방법
KR100604057B1 (ko) * 2004-09-24 2006-07-24 삼성에스디아이 주식회사 화소 및 이를 이용한 발광 표시장치
KR100739318B1 (ko) * 2004-11-22 2007-07-12 삼성에스디아이 주식회사 화소회로 및 발광 표시장치
US7872620B2 (en) * 2005-04-29 2011-01-18 Seoul National University Industry Foundation Pixel structure using voltage programming-type for active matrix organic light emitting device

Also Published As

Publication number Publication date
EP1737046A1 (de) 2006-12-27
US20060290633A1 (en) 2006-12-28
CN1885552A (zh) 2006-12-27
CN1885552B (zh) 2010-12-29
KR100624314B1 (ko) 2006-09-19
EP1737046B1 (de) 2008-08-13
JP2007005766A (ja) 2007-01-11
US9196747B2 (en) 2015-11-24

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: SAMSUNG MOBILE DISPLAY CO. LTD., SUWON, GYEONG, KR

8364 No opposition during term of opposition