DE602005022688D1 - Antriebssystem zum scannen eines arbeitsstücks mit einem ionenstrahl - Google Patents

Antriebssystem zum scannen eines arbeitsstücks mit einem ionenstrahl

Info

Publication number
DE602005022688D1
DE602005022688D1 DE602005022688T DE602005022688T DE602005022688D1 DE 602005022688 D1 DE602005022688 D1 DE 602005022688D1 DE 602005022688 T DE602005022688 T DE 602005022688T DE 602005022688 T DE602005022688 T DE 602005022688T DE 602005022688 D1 DE602005022688 D1 DE 602005022688D1
Authority
DE
Germany
Prior art keywords
workpiece
scanning
drive system
ion beam
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005022688T
Other languages
English (en)
Inventor
John Vanderpot
John Pollack
Donald W Berrian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of DE602005022688D1 publication Critical patent/DE602005022688D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • ing And Chemical Polishing (AREA)
  • Micromachines (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Connection Of Motors, Electrical Generators, Mechanical Devices, And The Like (AREA)
  • Reciprocating, Oscillating Or Vibrating Motors (AREA)
  • Brushless Motors (AREA)
  • Drying Of Semiconductors (AREA)
DE602005022688T 2004-04-05 2005-04-05 Antriebssystem zum scannen eines arbeitsstücks mit einem ionenstrahl Active DE602005022688D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US55967204P 2004-04-05 2004-04-05
PCT/US2005/011497 WO2005098909A2 (en) 2004-04-05 2005-04-05 Drive system for scanning a workpiece through an ion beam

Publications (1)

Publication Number Publication Date
DE602005022688D1 true DE602005022688D1 (de) 2010-09-16

Family

ID=34964844

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005022688T Active DE602005022688D1 (de) 2004-04-05 2005-04-05 Antriebssystem zum scannen eines arbeitsstücks mit einem ionenstrahl

Country Status (7)

Country Link
EP (4) EP1733465A1 (de)
JP (2) JP4877555B2 (de)
KR (2) KR101289504B1 (de)
CN (3) CN101006545B (de)
DE (1) DE602005022688D1 (de)
TW (1) TWI345548B (de)
WO (2) WO2005099072A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI435378B (zh) * 2006-04-26 2014-04-21 Axcelis Tech Inc 劑量均勻性校正方法
JP2010501106A (ja) * 2006-08-17 2010-01-14 アクセリス テクノロジーズ， インコーポレイテッド イオン注入システムに用いられる基材取り扱いスキャンアーム
US7785060B2 (en) * 2006-10-27 2010-08-31 Applied Materials, Inc. Multi-directional mechanical scanning in an ion implanter
US7994488B2 (en) * 2008-04-24 2011-08-09 Axcelis Technologies, Inc. Low contamination, low energy beamline architecture for high current ion implantation
US9558980B2 (en) * 2008-04-30 2017-01-31 Axcelis Technologies, Inc. Vapor compression refrigeration chuck for ion implanters
US8481969B2 (en) 2010-06-04 2013-07-09 Axcelis Technologies, Inc. Effective algorithm for warming a twist axis for cold ion implantations
JP5763425B2 (ja) * 2011-06-03 2015-08-12 株式会社 イマジナホールディングス 振動発生装置
US8895944B2 (en) * 2012-01-20 2014-11-25 Advanced Ion Beam Technology, Inc. Scan head and scan arm using the same
WO2014182635A1 (en) 2013-05-08 2014-11-13 Baldwin Megan E Biomarkers for age-related macular degeneration (amd)
CN106409728B (zh) * 2016-10-31 2019-02-19 北京北方华创微电子装备有限公司 一种密封结构及一种半导体设备
JP6374938B2 (ja) * 2016-11-16 2018-08-15 株式会社ソディック ガルバノスキャナ
CN108987297B (zh) * 2017-05-31 2021-10-26 上海微电子装备（集团）股份有限公司 回转装置、芯片键合装置及芯片的键合方法
CN107313659A (zh) * 2017-06-27 2017-11-03 上海中克世电子科技有限公司 一种用于智能锁的电机直接驱动摆动臂拨动锁芯开关的机构
CN109524285B (zh) * 2017-09-19 2021-06-11 中国电子科技集团公司第四十八研究所 一种离子束刻蚀设备
CN111383883B (zh) * 2018-12-27 2021-09-21 中国科学院光电技术研究所 超大面积扫描式反应离子刻蚀机及刻蚀方法
EP3914401B1 (de) * 2019-01-24 2023-12-20 3M Innovative Properties Company Vorrichtung und verfahren zum drehen eines werkstücks
CN110085500B (zh) * 2019-05-15 2021-03-30 中国电子科技集团公司第二十四研究所 一种提高离子注入剂量控制精度的方法和系统
CN112670150B (zh) * 2020-12-22 2023-11-17 马鞍山市胜康精密机电有限公司 一种光电元器件加工用离子注入装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6146890A (ja) * 1984-08-10 1986-03-07 トヨタ自動車株式会社 電気炉の運転制御方法
JPS6146890U (ja) * 1984-08-28 1986-03-28 日本電気ホームエレクトロニクス株式会社 リニア送り装置
JP2699170B2 (ja) * 1986-04-09 1998-01-19 イクリプス・イオン・テクノロジー・インコーポレイテッド イオンビーム走査方法および装置
JP2559453B2 (ja) * 1988-03-18 1996-12-04 株式会社日立製作所 リニアアクセス機構
US4965862A (en) * 1988-05-18 1990-10-23 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US4867652A (en) * 1988-12-08 1989-09-19 Carrier Corporation Balanced rolling rotor motor compressor
JPH07123034B2 (ja) * 1990-02-22 1995-12-25 日新電機株式会社 イオン注入装置
CN1033933C (zh) * 1992-05-08 1997-01-29 陈南斗 扫描器
JPH0973873A (ja) * 1995-09-05 1997-03-18 Nissin Electric Co Ltd ホルダ駆動装置
US5751078A (en) * 1996-10-03 1998-05-12 Lockheed Martin Corp. Missiles & Space Reactionless, momentum compensated payload positioner
JPH10326590A (ja) * 1997-05-27 1998-12-08 Oki Electric Ind Co Ltd イオン注入用ウエハスキャン装置
JP3729604B2 (ja) * 1997-06-16 2005-12-21 住友イートンノバ株式会社 イオン注入装置
JP2001516129A (ja) * 1997-08-13 2001-09-25 バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド リニア気体軸受け及びアクティブカウンターバランスオプションを有するスキャニングシステム
GB2382716B (en) * 1998-07-21 2003-09-03 Applied Materials Inc Ion Implantation Beam Monitor
JP2000068226A (ja) * 1998-08-24 2000-03-03 Nissin Electric Co Ltd イオン注入装置
US6350991B1 (en) * 1999-04-19 2002-02-26 Applied Materials, Inc. Ion implanter with vacuum piston counterbalance
US6207959B1 (en) * 1999-04-19 2001-03-27 Applied Materials, Inc. Ion implanter
EP1056114A3 (de) * 1999-05-24 2007-05-09 Applied Materials, Inc. Ionenimplantierungsgerät
US6515288B1 (en) * 2000-03-16 2003-02-04 Applied Materials, Inc. Vacuum bearing structure and a method of supporting a movable member
US6600163B2 (en) * 2000-12-22 2003-07-29 Alfred M. Halling In-process wafer charge monitor and control system for ion implanter
US6956223B2 (en) * 2002-04-10 2005-10-18 Applied Materials, Inc. Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
US6908836B2 (en) * 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method

Also Published As

Publication number Publication date
KR101126884B1 (ko) 2012-03-19
TWI345548B (en) 2011-07-21
TW200606095A (en) 2006-02-16
EP2264739A3 (de) 2011-03-02
CN1947326A (zh) 2007-04-11
EP2230681B1 (de) 2011-12-07
CN1961401A (zh) 2007-05-09
WO2005099072A1 (en) 2005-10-20
CN101006545B (zh) 2010-09-08
EP2230681A1 (de) 2010-09-22
CN1961401B (zh) 2010-12-08
KR101289504B1 (ko) 2013-07-24
WO2005098909A2 (en) 2005-10-20
JP4784872B2 (ja) 2011-10-05
EP1733465A1 (de) 2006-12-20
WO2005098909A3 (en) 2005-12-01
JP4877555B2 (ja) 2012-02-15
EP1738393B1 (de) 2010-08-04
KR20060135936A (ko) 2006-12-29
CN101006545A (zh) 2007-07-25
EP2264739A2 (de) 2010-12-22
JP2007532090A (ja) 2007-11-08
KR20070011348A (ko) 2007-01-24
CN1947326B (zh) 2010-06-16
JP2007532008A (ja) 2007-11-08
EP1738393A2 (de) 2007-01-03

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