DE602005015908D1 - Akustischer Dünnschicht-Volumenwellenresonator des Luftspalttyps und dessen Herstellungsverfahren - Google Patents

Akustischer Dünnschicht-Volumenwellenresonator des Luftspalttyps und dessen Herstellungsverfahren

Info

Publication number
DE602005015908D1
DE602005015908D1 DE200560015908 DE602005015908T DE602005015908D1 DE 602005015908 D1 DE602005015908 D1 DE 602005015908D1 DE 200560015908 DE200560015908 DE 200560015908 DE 602005015908 T DE602005015908 T DE 602005015908T DE 602005015908 D1 DE602005015908 D1 DE 602005015908D1
Authority
DE
Germany
Prior art keywords
manufacturing
air gap
wave resonator
gap type
film bulk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE200560015908
Other languages
English (en)
Inventor
In-Sang Song
Byeoung-Ju Ha
Yun-Kwon Park
Jong-Seok Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602005015908D1 publication Critical patent/DE602005015908D1/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
DE200560015908 2004-05-17 2005-05-17 Akustischer Dünnschicht-Volumenwellenresonator des Luftspalttyps und dessen Herstellungsverfahren Expired - Fee Related DE602005015908D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20040034969A KR100631216B1 (ko) 2004-05-17 2004-05-17 에어갭형 박막벌크음향공진기 및 그 제조방법

Publications (1)

Publication Number Publication Date
DE602005015908D1 true DE602005015908D1 (de) 2009-09-24

Family

ID=35308871

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200560015908 Expired - Fee Related DE602005015908D1 (de) 2004-05-17 2005-05-17 Akustischer Dünnschicht-Volumenwellenresonator des Luftspalttyps und dessen Herstellungsverfahren

Country Status (5)

Country Link
US (1) US7253705B2 (de)
EP (1) EP1598933B1 (de)
JP (1) JP2005333642A (de)
KR (1) KR100631216B1 (de)
DE (1) DE602005015908D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100566152C (zh) * 2002-09-12 2009-12-02 Nxp股份有限公司 具有抑制体声波滤波器中通带波纹的装置的体声波谐振器
KR100615711B1 (ko) * 2005-01-25 2006-08-25 삼성전자주식회사 필름 벌크 어쿠스틱 공진기를 이용한 대역 필터 및 그제조방법.
JP2006217281A (ja) * 2005-02-03 2006-08-17 Toshiba Corp 薄膜バルク音響装置の製造方法
US7562429B2 (en) * 2005-06-20 2009-07-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Suspended device and method of making
JP2007036829A (ja) * 2005-07-28 2007-02-08 Toshiba Corp 薄膜圧電共振器、フィルタ及び薄膜圧電共振器の製造方法
US7732241B2 (en) * 2005-11-30 2010-06-08 Semiconductor Energy Labortory Co., Ltd. Microstructure and manufacturing method thereof and microelectromechanical system
JP4870541B2 (ja) * 2006-12-15 2012-02-08 太陽誘電株式会社 圧電薄膜共振器およびフィルタ
JP5220503B2 (ja) 2008-07-23 2013-06-26 太陽誘電株式会社 弾性波デバイス
US8354332B2 (en) * 2008-11-26 2013-01-15 Georgia Tech Research Corporation Methods of forming micro-electromichanical resonators having boron-doped resonator bodies containing eutectic alloys
JP5754129B2 (ja) 2010-03-11 2015-07-29 セイコーエプソン株式会社 圧電素子、圧電センサー、電子機器、および圧電素子の製造方法
US10658998B2 (en) 2013-07-31 2020-05-19 Oepic Semiconductors, Inc. Piezoelectric film transfer for acoustic resonators and filters
CN104202010B (zh) * 2014-08-28 2017-05-03 中国工程物理研究院电子工程研究所 一种镂空空腔型薄膜体声波谐振器及其制作方法
CN106877836B (zh) * 2015-12-14 2020-12-18 中芯国际集成电路制造(上海)有限公司 一种薄膜体声波谐振器及其制造方法和电子装置
JP7290941B2 (ja) * 2018-12-27 2023-06-14 太陽誘電株式会社 弾性波デバイス、フィルタおよびマルチプレクサ
CN112039460B (zh) * 2019-07-19 2022-05-10 中芯集成电路（宁波）有限公司 薄膜体声波谐振器及其制作方法
CN112039481B (zh) * 2019-08-09 2024-03-19 中芯集成电路（宁波）有限公司 体声波谐振器及其制造方法
CN111010135A (zh) * 2019-10-26 2020-04-14 诺思(天津)微系统有限责任公司 体声波谐振器、滤波器及电子设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3939939B2 (ja) * 2001-07-17 2007-07-04 富士通株式会社 圧電薄膜共振素子の製造方法
JP4074493B2 (ja) 2001-08-31 2008-04-09 日本碍子株式会社 セラミック素子
JP3875240B2 (ja) * 2004-03-31 2007-01-31 株式会社東芝 電子部品の製造方法
KR100622955B1 (ko) 2004-04-06 2006-09-18 삼성전자주식회사 박막 벌크 음향 공진기 및 그 제조방법
KR100635268B1 (ko) * 2004-05-17 2006-10-19 삼성전자주식회사 인덕터가 내장된 필터, 듀플렉서 및 그 제조방법

Also Published As

Publication number Publication date
KR100631216B1 (ko) 2006-10-04
JP2005333642A (ja) 2005-12-02
US20050253670A1 (en) 2005-11-17
EP1598933B1 (de) 2009-08-12
US7253705B2 (en) 2007-08-07
KR20050109870A (ko) 2005-11-22
EP1598933A1 (de) 2005-11-23

Similar Documents

Publication Publication Date Title
DE602005015908D1 (de) Akustischer Dünnschicht-Volumenwellenresonator des Luftspalttyps und dessen Herstellungsverfahren
DE602006004289D1 (de) Piezoelektrischer Dünnschichtresonator und Filter
DE60314715D1 (de) Piezoelektrischer resonierender Filter und Duplexer
DE602006009985D1 (de) Akustischer Oberflächenwellenfilter und -duplexer
GB2411302B (en) Acoustic filters and resonators
DE602005020725D1 (de) Piezoelektrisches Resonatorelement und piezoelektrisches Bauelement
DE602005027449D1 (de) Wabenstruktur und herstellungsverfahren dafür
EP1857427A4 (de) Wabenstruktur und herstellungsverfahren dafür
EP1862279A4 (de) Wabenstruktur und herstellungsverfahren dafür
EP1887688A4 (de) Piezoelektrischer resonator und piezoelektrischer dünnschichtfilter
DE602004023213D1 (de) Keramikwabenfilter und herstellungsverfahren dafür
GB0522393D0 (en) Acoustically coupled thin-film resonators
DE602005000537D1 (de) Piezoelektrischer Dünnschichtresonator, Filter damit und zugehörige Herstellungsmethode
ATE474833T1 (de) Inhibitoren der wechselwirkung zwischen mdm2 und p53
EP1962424A4 (de) Akustischer oberflächenwellenresonator, akustischer oberflächenwellenfilter unter verwendung des akustischen oberflächenwellenresonators und antennenduplexer
DE602005025022D1 (de) Piezoelektrisches Resonatorelement und piezoelektrische Vorrichtung
DE602006007194D1 (de) Piezoelektrische Schwingzunge und piezoelektrisches Bauelement
EP1850633A4 (de) Piezoelektrischer lautsprecher und verfahren zu seiner herstellung
GB0624654D0 (en) Sound absorption block and method of constructing the same
EP1943376A4 (de) Piezoelektrischer einkristall und herstellungsverfahren dafür, piezoelektrisches element und dielektrisches element
DE602004018896D1 (de) Duplexer und Herstellungsverfahen
DE602006002656D1 (de) Piezoelektrischer Dünnschichtresonator, Filter und Spannungsgesteuerter Oszillator
EP1650531A4 (de) Winkelgeschwindigkeitssensor und sein herstellungsverfahren
EP1990915A4 (de) Oberflächenwellenanordnung und verfahren zu ihrer herstellung
DE102004011751A8 (de) Piezoelektrischer elektroakustischer Wandler und sein Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee