DE602004032435D1 - Vorrichtung zur chemischen behandlung dünner schichten von halbleitern - Google Patents

Vorrichtung zur chemischen behandlung dünner schichten von halbleitern

Info

Publication number
DE602004032435D1
DE602004032435D1 DE602004032435T DE602004032435T DE602004032435D1 DE 602004032435 D1 DE602004032435 D1 DE 602004032435D1 DE 602004032435 T DE602004032435 T DE 602004032435T DE 602004032435 T DE602004032435 T DE 602004032435T DE 602004032435 D1 DE602004032435 D1 DE 602004032435D1
Authority
DE
Germany
Prior art keywords
chamber
processing
wafer
semiconductors
chemical treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004032435T
Other languages
English (en)
Inventor
Sophia Wen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE602004032435D1 publication Critical patent/DE602004032435D1/de
Anticipated expiration legal-status Critical
Active legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Sampling And Sample Adjustment (AREA)
DE602004032435T 2003-06-13 2004-06-10 Vorrichtung zur chemischen behandlung dünner schichten von halbleitern Active DE602004032435D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US47838403P 2003-06-13 2003-06-13
PCT/US2004/018516 WO2004114375A1 (en) 2003-06-13 2004-06-10 Method and apparatus for thin-layer chemical processing of semiconductor wafers

Publications (1)

Publication Number Publication Date
DE602004032435D1 true DE602004032435D1 (de) 2011-06-09

Family

ID=33539087

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004032435T Active DE602004032435D1 (de) 2003-06-13 2004-06-10 Vorrichtung zur chemischen behandlung dünner schichten von halbleitern

Country Status (8)

Country Link
US (2) US7938906B2 (de)
EP (1) EP1639629B1 (de)
JP (1) JP2007502550A (de)
CN (1) CN100433243C (de)
AT (1) ATE507578T1 (de)
DE (1) DE602004032435D1 (de)
TW (1) TWI382447B (de)
WO (1) WO2004114375A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
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US8076244B2 (en) * 2006-02-10 2011-12-13 Micron Technology, Inc. Methods for causing fluid to flow through or into via holes, vents and other openings or recesses that communicate with surfaces of substrates of semiconductor device components
JP4751460B2 (ja) * 2009-02-18 2011-08-17 東京エレクトロン株式会社 基板搬送装置及び基板処理システム
CN102738033B (zh) * 2011-04-15 2014-11-26 无锡华瑛微电子技术有限公司 包含改进立柱结构的半导体处理装置
CN102738034B (zh) * 2011-04-15 2014-12-31 无锡华瑛微电子技术有限公司 包含处理流体泄漏回收结构的半导体处理装置
CN102737955B (zh) * 2011-04-15 2015-04-15 无锡华瑛微电子技术有限公司 一种半导体处理装置
CN102738032B (zh) * 2011-04-15 2014-12-31 无锡华瑛微电子技术有限公司 可校正工作面平整性的半导体处理装置
CN102738031B (zh) * 2011-04-15 2015-02-04 无锡华瑛微电子技术有限公司 包含可抽拉腔室的半导体处理装置
EP2998990B1 (de) 2011-04-15 2017-06-07 Wuxi Huaying Microelectronics Technology Co., Ltd. Halbleiterverarbeitungsvorrichtung
CN102903604B (zh) * 2011-07-29 2015-03-18 无锡华瑛微电子技术有限公司 掀开式半导体处理装置
CN103094152B (zh) * 2011-11-01 2015-02-04 无锡华瑛微电子技术有限公司 半导体处理装置及处理流体收集方法
CN102903606B (zh) * 2011-07-29 2016-03-30 无锡华瑛微电子技术有限公司 多腔室半导体处理装置
US10283389B2 (en) * 2011-07-29 2019-05-07 Wuxi Huaying Microelectronics Technology Co., Ltd Adjustable semiconductor processing device and control method thereof
CN102903605B (zh) * 2011-07-29 2015-03-18 无锡华瑛微电子技术有限公司 半导体处理装置及控制方法
CN103187240B (zh) * 2011-12-30 2016-06-01 无锡华瑛微电子技术有限公司 半导体处理设备
CN103187338B (zh) * 2011-12-30 2015-08-19 无锡华瑛微电子技术有限公司 模块化半导体处理设备
US9679751B2 (en) 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
CN103367197B (zh) * 2012-03-29 2015-12-02 无锡华瑛微电子技术有限公司 晶圆表面处理系统
CN103454334B (zh) * 2012-05-29 2015-09-09 无锡华瑛微电子技术有限公司 晶圆表面的超微量阴阳离子检测系统
TWI489532B (zh) * 2012-06-14 2015-06-21 Wuxi Huaying Microelectronics Technology Co Ltd 半導體處理裝置
US20150041062A1 (en) * 2013-08-12 2015-02-12 Lam Research Corporation Plasma processing chamber with removable body
US9368378B2 (en) * 2013-12-31 2016-06-14 Sophia Wen Semiconductor wafer cleaning system
CN104485301B (zh) * 2014-12-19 2017-02-22 无锡华瑛微电子技术有限公司 包含防腐蚀立柱结构的半导体晶圆化学处理装置
CN106783669B (zh) * 2015-11-25 2019-04-12 无锡华瑛微电子技术有限公司 半导体处理装置及方法
US11333074B2 (en) * 2016-07-29 2022-05-17 Aerojet Rocketdyne, Inc. Liquid propellant rocket engine turbopump drain
US20210305068A1 (en) * 2018-09-07 2021-09-30 Huaying Research Co., Ltd Semiconductor processing device
US11684594B2 (en) 2020-05-12 2023-06-27 President And Fellows Of Harvard College Antifungal prophylaxis for cornea
US20230135250A1 (en) * 2020-09-15 2023-05-04 Huaying Research Co., Ltd. Semiconductor edge processing apparatus and methods

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US4857142A (en) 1988-09-22 1989-08-15 Fsi International, Inc. Method and apparatus for controlling simultaneous etching of front and back sides of wafers
US5169408A (en) * 1990-01-26 1992-12-08 Fsi International, Inc. Apparatus for wafer processing with in situ rinse
JPH09502030A (ja) * 1993-06-29 1997-02-25 イマックス コーポレーション 光学表面の洗浄方法および装置
US6239038B1 (en) * 1995-10-13 2001-05-29 Ziying Wen Method for chemical processing semiconductor wafers
US6350319B1 (en) * 1998-03-13 2002-02-26 Semitool, Inc. Micro-environment reactor for processing a workpiece
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JP2000133693A (ja) * 1998-08-19 2000-05-12 Shibaura Mechatronics Corp 真空装置用駆動機構および真空装置
JP4086216B2 (ja) * 1999-03-02 2008-05-14 株式会社エフテック パイプ材のハイドロフォーミング方法
US20030213772A9 (en) * 1999-07-09 2003-11-20 Mok Yeuk-Fai Edwin Integrated semiconductor substrate bevel cleaning apparatus and method
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JP2001255540A (ja) * 2000-03-09 2001-09-21 Miyota Kk 液晶表示パネルの製造方法及びその装置
US6589361B2 (en) * 2000-06-16 2003-07-08 Applied Materials Inc. Configurable single substrate wet-dry integrated cluster cleaner
JP2004506313A (ja) * 2000-08-04 2004-02-26 エス．シー．フルーイズ，インコーポレイテッド 遮断密閉メカニズムを有した逆圧容器
KR100877044B1 (ko) * 2000-10-02 2008-12-31 도쿄엘렉트론가부시키가이샤 세정처리장치
JP3453366B2 (ja) * 2001-01-25 2003-10-06 株式会社半導体先端テクノロジーズ 基板の洗浄装置および洗浄方法
JP2002270568A (ja) * 2001-03-12 2002-09-20 Mimasu Semiconductor Industry Co Ltd 半導体ウエーハの製造方法および金属モニタリング装置
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Also Published As

Publication number Publication date
EP1639629A1 (de) 2006-03-29
JP2007502550A (ja) 2007-02-08
US7938906B2 (en) 2011-05-10
US20120115255A1 (en) 2012-05-10
TW200507028A (en) 2005-02-16
ATE507578T1 (de) 2011-05-15
CN1806312A (zh) 2006-07-19
US20040253747A1 (en) 2004-12-16
TWI382447B (zh) 2013-01-11
EP1639629B1 (de) 2011-04-27
WO2004114375A1 (en) 2004-12-29
CN100433243C (zh) 2008-11-12

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