NO930680L - Fremgangsmaate og anordning for aa fjerne skade like under overflaten i halvledermaterialer ved hjelp av plasmaetsing - Google Patents

Fremgangsmaate og anordning for aa fjerne skade like under overflaten i halvledermaterialer ved hjelp av plasmaetsing

Info

Publication number
NO930680L
NO930680L NO93930680A NO930680A NO930680L NO 930680 L NO930680 L NO 930680L NO 93930680 A NO93930680 A NO 93930680A NO 930680 A NO930680 A NO 930680A NO 930680 L NO930680 L NO 930680L
Authority
NO
Norway
Prior art keywords
procedure
under
semiconductor materials
plasma measurement
damage
Prior art date
Application number
NO93930680A
Other languages
English (en)
Other versions
NO930680D0 (no
Inventor
Charles B Zarowin
L David Bollinger
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of NO930680D0 publication Critical patent/NO930680D0/no
Publication of NO930680L publication Critical patent/NO930680L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Et høytrykks plasma anvendes i forbindelse med et materialfjerningsverktøy (10) som gjør bruk av plasmahjulpet, kjemisk etsning for hurtig å fjerne skade fra et substrat uten mekanisk å danne kontakt med overflaten og uten å introdusere ny mikroskopisk eller atomær skade på substratet.
NO93930680A 1992-02-27 1993-02-25 Fremgangsmaate og anordning for aa fjerne skade like under overflaten i halvledermaterialer ved hjelp av plasmaetsing NO930680L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/842,828 US5238532A (en) 1992-02-27 1992-02-27 Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching

Publications (2)

Publication Number Publication Date
NO930680D0 NO930680D0 (no) 1993-02-25
NO930680L true NO930680L (no) 1993-08-30

Family

ID=25288337

Family Applications (1)

Application Number Title Priority Date Filing Date
NO93930680A NO930680L (no) 1992-02-27 1993-02-25 Fremgangsmaate og anordning for aa fjerne skade like under overflaten i halvledermaterialer ved hjelp av plasmaetsing

Country Status (6)

Country Link
US (1) US5238532A (no)
EP (1) EP0558238B1 (no)
JP (1) JP2565635B2 (no)
DE (1) DE69301942T2 (no)
IL (1) IL104663A (no)
NO (1) NO930680L (no)

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US5423918A (en) * 1993-09-21 1995-06-13 Applied Materials, Inc. Method for reducing particulate contamination during plasma processing of semiconductor devices
IL112511A0 (en) * 1994-02-18 1995-05-26 Hughes Aircraft Co System for improving the total thickness variation of a wafer
US6030887A (en) * 1998-02-26 2000-02-29 Memc Electronic Materials, Inc. Flattening process for epitaxial semiconductor wafers
US7569790B2 (en) 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US7166816B1 (en) * 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US6165375A (en) * 1997-09-23 2000-12-26 Cypress Semiconductor Corporation Plasma etching method
US6139678A (en) * 1997-11-20 2000-10-31 Trusi Technologies, Llc Plasma processing methods and apparatus
US6074947A (en) * 1998-07-10 2000-06-13 Plasma Sil, Llc Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching
JP4169854B2 (ja) * 1999-02-12 2008-10-22 スピードファム株式会社 ウエハ平坦化方法
US6287976B1 (en) 1999-05-19 2001-09-11 Tru-Si Technologies, Inc. Plasma processing methods and apparatus
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
US6338805B1 (en) * 1999-07-14 2002-01-15 Memc Electronic Materials, Inc. Process for fabricating semiconductor wafers with external gettering
US6200908B1 (en) 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
JP2001107272A (ja) * 1999-10-08 2001-04-17 Hitachi Ltd 試料の処理方法および処理装置並びに磁気ヘッドの製作方法
EP1305169A1 (en) * 2000-05-02 2003-05-02 Epion Corporation System and method for adjusting the properties of a device by gcib processing
US6749764B1 (en) * 2000-11-14 2004-06-15 Tru-Si Technologies, Inc. Plasma processing comprising three rotational motions of an article being processed
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US6896949B1 (en) 2001-03-15 2005-05-24 Bookham (Us) Inc. Wafer scale production of optical elements
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
US6660177B2 (en) * 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
DE10239083B4 (de) * 2002-08-26 2009-09-03 Schott Ag Vorrichtung zum Versorgen einer Prozesskammer mit fluiden Medien und deren Verwendung
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
US7297892B2 (en) * 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
KR20080105617A (ko) * 2007-05-31 2008-12-04 삼성모바일디스플레이주식회사 화학기상증착장치 및 플라즈마강화 화학기상증착장치
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
JP5075793B2 (ja) * 2008-11-06 2012-11-21 東京エレクトロン株式会社 可動ガス導入構造物及び基板処理装置
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
KR102523717B1 (ko) * 2016-05-29 2023-04-19 도쿄엘렉트론가부시키가이샤 선택적 실리콘 질화물 에칭 방법
WO2018234611A1 (en) * 2017-06-21 2018-12-27 Picosun Oy APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

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US3943047A (en) * 1974-05-10 1976-03-09 Bell Telephone Laboratories, Incorporated Selective removal of material by sputter etching
US4668366A (en) * 1984-08-02 1987-05-26 The Perkin-Elmer Corporation Optical figuring by plasma assisted chemical transport and etching apparatus therefor
US4874460A (en) * 1987-11-16 1989-10-17 Seiko Instruments Inc. Method and apparatus for modifying patterned film
FR2639567B1 (fr) * 1988-11-25 1991-01-25 France Etat Machine a microfaisceau laser d'intervention sur des objets a couche mince, en particulier pour la gravure ou le depot de matiere par voie chimique en presence d'un gaz reactif
DE3914065A1 (de) * 1989-04-28 1990-10-31 Leybold Ag Vorrichtung zur durchfuehrung von plasma-aetzverfahren
JPH0758708B2 (ja) * 1989-05-18 1995-06-21 松下電器産業株式会社 ドライエッチング装置

Also Published As

Publication number Publication date
EP0558238A1 (en) 1993-09-01
JPH065567A (ja) 1994-01-14
EP0558238B1 (en) 1996-03-27
DE69301942D1 (de) 1996-05-02
NO930680D0 (no) 1993-02-25
JP2565635B2 (ja) 1996-12-18
IL104663A (en) 1996-05-14
US5238532A (en) 1993-08-24
IL104663A0 (en) 1993-06-10
DE69301942T2 (de) 1996-08-22

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