DE602004023868D1 - Laminat mit wurtzritkristallschicht und herstellungsverfahren dafür - Google Patents

Laminat mit wurtzritkristallschicht und herstellungsverfahren dafür

Info

Publication number
DE602004023868D1
DE602004023868D1 DE602004023868T DE602004023868T DE602004023868D1 DE 602004023868 D1 DE602004023868 D1 DE 602004023868D1 DE 602004023868 T DE602004023868 T DE 602004023868T DE 602004023868 T DE602004023868 T DE 602004023868T DE 602004023868 D1 DE602004023868 D1 DE 602004023868D1
Authority
DE
Germany
Prior art keywords
crystal
laminate
manufacturing
crystal layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004023868T
Other languages
English (en)
Inventor
Morito Akiyama
Naohiro Ueno
Hiroshi Tateyama
Toshihiro Kamohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003137688A external-priority patent/JP2004346335A/ja
Priority claimed from JP2003139506A external-priority patent/JP4117376B2/ja
Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST
Publication of DE602004023868D1 publication Critical patent/DE602004023868D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE602004023868T 2003-05-15 2004-05-14 Laminat mit wurtzritkristallschicht und herstellungsverfahren dafür Expired - Lifetime DE602004023868D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003137688A JP2004346335A (ja) 2003-05-15 2003-05-15 ウルツ鉱型薄膜およびその作製方法
JP2003139506A JP4117376B2 (ja) 2003-05-16 2003-05-16 ウルツ鉱型結晶層を含む積層体及びその製造方法
PCT/JP2004/006553 WO2004101842A1 (ja) 2003-05-15 2004-05-14 ウルツ鉱型薄膜、ウルツ鉱型結晶層を含む積層体、および、これらの製造方法

Publications (1)

Publication Number Publication Date
DE602004023868D1 true DE602004023868D1 (de) 2009-12-10

Family

ID=33455479

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004023868T Expired - Lifetime DE602004023868D1 (de) 2003-05-15 2004-05-14 Laminat mit wurtzritkristallschicht und herstellungsverfahren dafür

Country Status (4)

Country Link
US (1) US7642693B2 (de)
EP (1) EP1672091B1 (de)
DE (1) DE602004023868D1 (de)
WO (1) WO2004101842A1 (de)

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US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
CN101583742A (zh) * 2006-12-11 2009-11-18 鲁门兹公司 氧化锌多结光电池和光电器件
US8606626B1 (en) 2007-01-31 2013-12-10 Experian Information Solutions, Inc. Systems and methods for providing a direct marketing campaign planning environment
CN104149411B (zh) * 2008-04-22 2017-08-08 新日铁住金株式会社 镀敷钢板及镀敷钢板的热压方法
US20100117070A1 (en) * 2008-09-18 2010-05-13 Lumenz Llc Textured semiconductor light-emitting devices
US7977224B2 (en) * 2008-12-03 2011-07-12 The United States Of America As Represented By The Secretary Of The Army Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby
US9243316B2 (en) * 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US9679765B2 (en) 2010-01-22 2017-06-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation
US8796904B2 (en) * 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US8673121B2 (en) 2010-01-22 2014-03-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric materials with opposite C-axis orientations
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9490771B2 (en) 2012-10-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and frame
US9490418B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer
US9401692B2 (en) 2012-10-29 2016-07-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having collar structure
KR20130116099A (ko) * 2012-04-13 2013-10-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9385684B2 (en) 2012-10-23 2016-07-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having guard ring
US9929310B2 (en) 2013-03-14 2018-03-27 Applied Materials, Inc. Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices
US10340885B2 (en) 2014-05-08 2019-07-02 Avago Technologies International Sales Pte. Limited Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes
JP7115257B2 (ja) * 2018-11-29 2022-08-09 Tdk株式会社 圧電薄膜素子
JP7249193B2 (ja) * 2019-04-03 2023-03-30 株式会社東芝 発電素子、発電モジュール、発電装置、発電システム、及び、発電素子の製造方法
JP2021153169A (ja) * 2020-03-24 2021-09-30 日東電工株式会社 積層体、これを用いた圧電デバイス、積層体の製造方法、及び圧電デバイスの製造方法
WO2022210182A1 (ja) * 2021-03-30 2022-10-06 日東電工株式会社 圧電体膜の製造方法、圧電素子の製造方法及び圧電デバイスの製造方法
WO2022210438A1 (ja) * 2021-03-30 2022-10-06 日東電工株式会社 圧電素子の製造方法及び圧電デバイスの製造方法
WO2022210563A1 (ja) * 2021-03-30 2022-10-06 日東電工株式会社 圧電体膜、圧電体膜の製造方法、圧電素子及び圧電デバイス

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Publication number Priority date Publication date Assignee Title
JPS5748820A (en) 1980-09-05 1982-03-20 Murata Mfg Co Ltd Surface acoustic wave element
JPS59231911A (ja) * 1983-06-14 1984-12-26 Clarion Co Ltd 表面弾性波素子
JPS60142607A (ja) 1983-12-29 1985-07-27 Nec Corp 圧電薄膜複合振動子
JP3163606B2 (ja) * 1993-01-29 2001-05-08 住友電気工業株式会社 表面弾性波素子
JP2909532B2 (ja) 1996-10-21 1999-06-23 工業技術院長 高温薄膜型振動センサー
JP3813740B2 (ja) * 1997-07-11 2006-08-23 Ｔｄｋ株式会社 電子デバイス用基板
WO2000076930A1 (en) * 1999-06-16 2000-12-21 Ppg Industries Ohio, Inc. Protective layers for sputter coated article
DE60038970D1 (de) * 1999-10-15 2008-07-03 Seiko Epson Corp Akustische oberflächenwellenanordnung
US6814130B2 (en) * 2000-10-13 2004-11-09 Chien-Min Sung Methods of making diamond tools using reverse casting of chemical vapor deposition
JP2005236337A (ja) * 2001-05-11 2005-09-02 Ube Ind Ltd 薄膜音響共振器及びその製造方法
JP2003037467A (ja) * 2001-07-24 2003-02-07 Murata Mfg Co Ltd 弾性表面波装置
JP3841053B2 (ja) * 2002-07-24 2006-11-01 株式会社村田製作所 弾性表面波装置及びその製造方法
JP2004200843A (ja) * 2002-12-17 2004-07-15 Sony Corp 圧電共振素子およびその製造方法ならびに電子機器

Also Published As

Publication number Publication date
EP1672091B1 (de) 2009-10-28
EP1672091A1 (de) 2006-06-21
EP1672091A4 (de) 2007-07-11
WO2004101842A1 (ja) 2004-11-25
US20070057285A1 (en) 2007-03-15
US7642693B2 (en) 2010-01-05

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