DE602004021975D1 - Lateraler feldeffekttransistor und seine herstellung mit einer abstandsschicht über und unter der kanalschicht - Google Patents
Lateraler feldeffekttransistor und seine herstellung mit einer abstandsschicht über und unter der kanalschichtInfo
- Publication number
- DE602004021975D1 DE602004021975D1 DE602004021975T DE602004021975T DE602004021975D1 DE 602004021975 D1 DE602004021975 D1 DE 602004021975D1 DE 602004021975 T DE602004021975 T DE 602004021975T DE 602004021975 T DE602004021975 T DE 602004021975T DE 602004021975 D1 DE602004021975 D1 DE 602004021975D1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- channel layer
- conductivity
- gate electrode
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 125000006850 spacer group Chemical group 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/SE2004/001253 WO2006025772A1 (en) | 2004-09-01 | 2004-09-01 | Lateral field effect transistor and its fabrication comprisng a spacer layer above and below the channel layer |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004021975D1 true DE602004021975D1 (de) | 2009-08-20 |
Family
ID=36000332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004021975T Active DE602004021975D1 (de) | 2004-09-01 | 2004-09-01 | Lateraler feldeffekttransistor und seine herstellung mit einer abstandsschicht über und unter der kanalschicht |
Country Status (6)
Country | Link |
---|---|
US (1) | US7834396B2 (de) |
EP (1) | EP1784868B1 (de) |
JP (1) | JP5031566B2 (de) |
AT (1) | ATE436092T1 (de) |
DE (1) | DE602004021975D1 (de) |
WO (1) | WO2006025772A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7943445B2 (en) | 2009-02-19 | 2011-05-17 | International Business Machines Corporation | Asymmetric junction field effect transistor |
JP7375699B2 (ja) | 2020-07-20 | 2023-11-08 | 株式会社豊田自動織機 | 電気装置用冷却装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5181087A (en) * | 1986-02-28 | 1993-01-19 | Hitachi, Ltd. | Semiconductor device and method of producing the same |
JP2542448B2 (ja) * | 1990-05-24 | 1996-10-09 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
US5610086A (en) * | 1995-06-06 | 1997-03-11 | Hughes Aircraft Company | Method of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications |
US6207994B1 (en) * | 1996-11-05 | 2001-03-27 | Power Integrations, Inc. | High-voltage transistor with multi-layer conduction region |
JP3168968B2 (ja) * | 1997-12-22 | 2001-05-21 | 日本電気株式会社 | 電界効果トランジスタとその製造方法 |
US6150680A (en) * | 1998-03-05 | 2000-11-21 | Welch Allyn, Inc. | Field effect semiconductor device having dipole barrier |
JP2000106442A (ja) * | 1998-09-29 | 2000-04-11 | Matsushita Electric Works Ltd | 絶縁ゲート型半導体装置及びその使用方法 |
JP2000216372A (ja) * | 1999-01-25 | 2000-08-04 | Sony Corp | 半導体装置とその製造方法 |
SE9900358D0 (sv) * | 1999-02-03 | 1999-02-03 | Ind Mikroelektronikcentrum Ab | A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor |
JP2000349096A (ja) * | 1999-06-01 | 2000-12-15 | Matsushita Electric Ind Co Ltd | 化合物電界効果トランジスタおよびその製造方法 |
JP3812421B2 (ja) * | 2001-06-14 | 2006-08-23 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタ |
JP2003031592A (ja) * | 2001-07-19 | 2003-01-31 | Auto Network Gijutsu Kenkyusho:Kk | 接合型電界効果トランジスタおよびその製造方法 |
WO2003028110A1 (fr) * | 2001-09-14 | 2003-04-03 | Matsushita Electric Industrial Co., Ltd. | Semi-conducteur |
US6906350B2 (en) * | 2001-10-24 | 2005-06-14 | Cree, Inc. | Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
JP2003151995A (ja) * | 2001-11-16 | 2003-05-23 | Sumitomo Electric Ind Ltd | 接合型電界効果トランジスタおよびその製造方法 |
-
2004
- 2004-09-01 DE DE602004021975T patent/DE602004021975D1/de active Active
- 2004-09-01 US US11/661,962 patent/US7834396B2/en active Active
- 2004-09-01 WO PCT/SE2004/001253 patent/WO2006025772A1/en active Application Filing
- 2004-09-01 JP JP2007529763A patent/JP5031566B2/ja active Active
- 2004-09-01 AT AT04775359T patent/ATE436092T1/de not_active IP Right Cessation
- 2004-09-01 EP EP04775359A patent/EP1784868B1/de active Active
Also Published As
Publication number | Publication date |
---|---|
WO2006025772A1 (en) | 2006-03-09 |
ATE436092T1 (de) | 2009-07-15 |
US7834396B2 (en) | 2010-11-16 |
JP5031566B2 (ja) | 2012-09-19 |
EP1784868B1 (de) | 2009-07-08 |
EP1784868A1 (de) | 2007-05-16 |
US20070262321A1 (en) | 2007-11-15 |
JP2008511984A (ja) | 2008-04-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |