DE602004020227D1 - Rotierende rohrförmige sputtertargetanorndung - Google Patents

Rotierende rohrförmige sputtertargetanorndung

Info

Publication number
DE602004020227D1
DE602004020227D1 DE602004020227T DE602004020227T DE602004020227D1 DE 602004020227 D1 DE602004020227 D1 DE 602004020227D1 DE 602004020227 T DE602004020227 T DE 602004020227T DE 602004020227 T DE602004020227 T DE 602004020227T DE 602004020227 D1 DE602004020227 D1 DE 602004020227D1
Authority
DE
Germany
Prior art keywords
assembly
target assembly
sputter target
tube
rotating tubular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004020227T
Other languages
English (en)
Inventor
Dirk Cnockaert
Bosscher Wilmert De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soleras Advanced Coatings BV
Original Assignee
Bekaert Advanced Coatings NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bekaert Advanced Coatings NV filed Critical Bekaert Advanced Coatings NV
Publication of DE602004020227D1 publication Critical patent/DE602004020227D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
    • F04D17/08—Centrifugal pumps
    • F04D17/16—Centrifugal pumps for displacing without appreciable compression
    • F04D17/168—Pumps specially adapted to produce a vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)
DE602004020227T 2003-07-04 2004-06-25 Rotierende rohrförmige sputtertargetanorndung Expired - Lifetime DE602004020227D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03077091 2003-07-04
PCT/EP2004/051247 WO2005005682A1 (en) 2003-07-04 2004-06-25 Rotating tubular sputter target assembly

Publications (1)

Publication Number Publication Date
DE602004020227D1 true DE602004020227D1 (de) 2009-05-07

Family

ID=34042902

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004020227T Expired - Lifetime DE602004020227D1 (de) 2003-07-04 2004-06-25 Rotierende rohrförmige sputtertargetanorndung

Country Status (7)

Country Link
US (1) US20060157346A1 (de)
EP (1) EP1641956B1 (de)
JP (1) JP2009513818A (de)
KR (1) KR20060111896A (de)
AT (1) ATE426690T1 (de)
DE (1) DE602004020227D1 (de)
WO (1) WO2005005682A1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5582681B2 (ja) * 2004-10-18 2014-09-03 ソレラス・アドヴァンスト・コーティングス・ビーヴイビーエー 回転可能なスパッタリングターゲットを支持する平面エンドブロック
JP5004942B2 (ja) * 2005-03-11 2012-08-22 ベーカート・アドヴァンスト・コーティングス 単一の直角エンドブロック
WO2007147757A1 (en) * 2006-06-19 2007-12-27 Bekaert Advanced Coatings Insert piece for an end-block of a sputtering installation
CN201162043Y (zh) * 2008-03-21 2008-12-10 北京京东方光电科技有限公司 磁控溅射靶结构及设备
DE102008039211B4 (de) * 2008-05-07 2011-08-25 VON ARDENNE Anlagentechnik GmbH, 01324 Rohrtarget mit Endblock zur Kühlmittelversorgung
KR20110014593A (ko) 2008-05-16 2011-02-11 베카에르트 어드벤스드 코팅스 높은 강성을 갖는 회전가능한 스퍼터링 마그네트론
DE102008033904B4 (de) * 2008-07-18 2012-01-19 Von Ardenne Anlagentechnik Gmbh Antriebsendblock für eine Magnetronanordnung mit einem rotierenden Target
EP2446060B1 (de) 2009-06-22 2017-05-10 Statens Serum Institut Dna-basierte verfahren zur klonspezifischen identifizierung von staphylococcus aureus
JP5342364B2 (ja) * 2009-08-05 2013-11-13 新明和工業株式会社 給電機構および真空処理装置
JP5730888B2 (ja) 2009-10-26 2015-06-10 ジェネラル・プラズマ・インコーポレーテッド ロータリーマグネトロンマグネットバー、およびこれを含む高いターゲット利用のための装置
DE102009056241B4 (de) * 2009-12-01 2012-07-12 Von Ardenne Anlagentechnik Gmbh Stützeinrichtung für eine Magnetronanordnung mit einem rotierenden Target
WO2011094060A2 (en) * 2010-01-29 2011-08-04 Applied Materials, Inc. Pump baffle design for integrated pump and sputter source
DE102010063685B4 (de) * 2010-02-21 2012-07-12 Von Ardenne Anlagentechnik Gmbh Magnetronanordnung mit einem Hohltarget
EP2372744B1 (de) * 2010-04-01 2016-01-13 Applied Materials, Inc. Vorrichtung zum Stützen eines drehbaren Targets und Sputter-Installation
EP2371992B1 (de) * 2010-04-01 2013-06-05 Applied Materials, Inc. Endblock und Zerstäubungsvorrichtung
US9334563B2 (en) 2010-07-12 2016-05-10 Materion Corporation Direct cooled rotary sputtering target
BR112013000785A2 (pt) 2010-07-12 2016-05-24 Materion Advanced Materials Technologies And Services Inc conjunto de união de tubo de apoio de alvo giratório
EP2723915A1 (de) 2011-06-27 2014-04-30 Soleras Ltd. Sputter-target
KR20130136856A (ko) * 2012-06-05 2013-12-13 주식회사 씨티씨 스퍼터링 소스 및 이를 포함하는 원통형 스퍼터링 장치
KR101441481B1 (ko) * 2012-09-11 2014-09-17 주식회사 에스에프에이 회전형 캐소드 및 이를 구비한 스퍼터 장치
US20140110245A1 (en) * 2012-10-18 2014-04-24 Primestar Solar, Inc. Non-bonded rotatable targets and their methods of sputtering
JP6415957B2 (ja) * 2014-12-09 2018-10-31 株式会社アルバック ロータリーカソード、および、スパッタ装置
CN104619107A (zh) * 2015-01-12 2015-05-13 广东韦达尔科技有限公司 一种等离子电磁式旋转处理装置
CN104640339A (zh) * 2015-01-12 2015-05-20 广东韦达尔科技有限公司 一种等离子表面处理装置
KR101694197B1 (ko) 2015-03-25 2017-01-09 주식회사 에스에프에이 스퍼터 장치
KR101687302B1 (ko) 2015-06-12 2016-12-16 주식회사 에스에프에이 스퍼터 장치
BE1024754B9 (nl) * 2016-11-29 2018-07-24 Soleras Advanced Coatings Bvba Een universeel monteerbaar eindblok
KR102462111B1 (ko) 2020-09-14 2022-11-02 주식회사 케이씨엠씨 회전형 캐소드 및 이를 구비한 스퍼터 장치
CN116057199A (zh) * 2020-10-08 2023-05-02 株式会社爱发科 旋转式阴极单元用的驱动块
CN112746260B (zh) * 2020-12-30 2023-02-28 湖南柯盛新材料有限公司 一种冷喷涂制造旋转靶材的工艺及其生产设备
CN113755803B (zh) * 2021-08-13 2023-11-28 中山凯旋真空科技股份有限公司 旋转驱动机构及平面阴极装置
DE102021129523A1 (de) 2021-11-12 2023-05-17 VON ARDENNE Asset GmbH & Co. KG Magnetsystem, Sputtervorrichtung und Gehäusedeckel
KR20230112498A (ko) 2022-01-20 2023-07-27 주식회사 케이씨엠씨 Rf 전원용 회전형 캐소드 및 이를 구비한 스퍼터 장치
KR20230112499A (ko) 2022-01-20 2023-07-27 주식회사 케이씨엠씨 회전형 캐소드 및 이를 구비한 스퍼터 장치
KR20230119297A (ko) 2022-02-07 2023-08-16 주식회사 케이씨엠씨 회전형 캐소드 및 이를 구비한 스퍼터 장치
CN115691853B (zh) * 2022-09-26 2024-01-23 中国核动力研究设计院 一种用于研究堆同位素辐照生产的辐照靶件及组装方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4422916A (en) * 1981-02-12 1983-12-27 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4443318A (en) * 1983-08-17 1984-04-17 Shatterproof Glass Corporation Cathodic sputtering apparatus
US4824540A (en) * 1988-04-21 1989-04-25 Stuart Robley V Method and apparatus for magnetron sputtering
US5096562A (en) * 1989-11-08 1992-03-17 The Boc Group, Inc. Rotating cylindrical magnetron structure for large area coating
US4981713A (en) * 1990-02-14 1991-01-01 E. I. Du Pont De Nemours And Company Low temperature plasma technology for corrosion protection of steel
US5200049A (en) * 1990-08-10 1993-04-06 Viratec Thin Films, Inc. Cantilever mount for rotating cylindrical magnetrons
EP0543931A4 (en) * 1990-08-10 1993-09-08 Viratec Thin Films, Inc. Shielding for arc suppression in rotating magnetron sputtering systems
US5262032A (en) * 1991-05-28 1993-11-16 Leybold Aktiengesellschaft Sputtering apparatus with rotating target and target cooling
ES2257047T3 (es) * 1998-04-16 2006-07-16 Bekaert Advanced Coatings Nv. Medios para controlar la erosion y la pulverizacion del objetivo en un magnetron.

Also Published As

Publication number Publication date
EP1641956B1 (de) 2009-03-25
EP1641956A1 (de) 2006-04-05
JP2009513818A (ja) 2009-04-02
US20060157346A1 (en) 2006-07-20
WO2005005682A1 (en) 2005-01-20
KR20060111896A (ko) 2006-10-30
ATE426690T1 (de) 2009-04-15

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Legal Events

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