ATE426690T1 - Rotierende rohrfírmige sputtertargetanorndung - Google Patents

Rotierende rohrfírmige sputtertargetanorndung

Info

Publication number
ATE426690T1
ATE426690T1 AT04741896T AT04741896T ATE426690T1 AT E426690 T1 ATE426690 T1 AT E426690T1 AT 04741896 T AT04741896 T AT 04741896T AT 04741896 T AT04741896 T AT 04741896T AT E426690 T1 ATE426690 T1 AT E426690T1
Authority
AT
Austria
Prior art keywords
assembly
sputter target
tube
target arrangement
rotating tubular
Prior art date
Application number
AT04741896T
Other languages
English (en)
Inventor
Dirk Cnockaert
Bosscher Wilmert De
Original Assignee
Bekaert Advanced Coatings
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bekaert Advanced Coatings filed Critical Bekaert Advanced Coatings
Application granted granted Critical
Publication of ATE426690T1 publication Critical patent/ATE426690T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
    • F04D17/08—Centrifugal pumps
    • F04D17/16—Centrifugal pumps for displacing without appreciable compression
    • F04D17/168—Pumps specially adapted to produce a vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)
AT04741896T 2003-07-04 2004-06-25 Rotierende rohrfírmige sputtertargetanorndung ATE426690T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03077091 2003-07-04

Publications (1)

Publication Number Publication Date
ATE426690T1 true ATE426690T1 (de) 2009-04-15

Family

ID=34042902

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04741896T ATE426690T1 (de) 2003-07-04 2004-06-25 Rotierende rohrfírmige sputtertargetanorndung

Country Status (7)

Country Link
US (1) US20060157346A1 (de)
EP (1) EP1641956B1 (de)
JP (1) JP2009513818A (de)
KR (1) KR20060111896A (de)
AT (1) ATE426690T1 (de)
DE (1) DE602004020227D1 (de)
WO (1) WO2005005682A1 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8562799B2 (en) * 2004-10-18 2013-10-22 Soleras Advanced Coatings Bvba Flat end-block for carrying a rotatable sputtering target
KR20070108907A (ko) * 2005-03-11 2007-11-13 베카에르트 어드벤스드 코팅스 단일, 직각 엔드-블록
CN101473405B (zh) * 2006-06-19 2010-11-17 贝卡尔特先进涂层公司 用于溅射装置端块的插件
CN201162043Y (zh) * 2008-03-21 2008-12-10 北京京东方光电科技有限公司 磁控溅射靶结构及设备
DE102008039211B4 (de) * 2008-05-07 2011-08-25 VON ARDENNE Anlagentechnik GmbH, 01324 Rohrtarget mit Endblock zur Kühlmittelversorgung
BRPI0911980A2 (pt) * 2008-05-16 2015-10-13 Bekaert Advanced Coatings pulverização catódica rotativa de magnetron com alta rigidez
DE102008033904B4 (de) * 2008-07-18 2012-01-19 Von Ardenne Anlagentechnik Gmbh Antriebsendblock für eine Magnetronanordnung mit einem rotierenden Target
EP2446060B1 (de) 2009-06-22 2017-05-10 Statens Serum Institut Dna-basierte verfahren zur klonspezifischen identifizierung von staphylococcus aureus
JP5342364B2 (ja) * 2009-08-05 2013-11-13 新明和工業株式会社 給電機構および真空処理装置
WO2011056581A2 (en) 2009-10-26 2011-05-12 General Plasma, Inc. Rotary magnetron magnet bar and apparatus containing the same for high target utilization
DE102009056241B4 (de) * 2009-12-01 2012-07-12 Von Ardenne Anlagentechnik Gmbh Stützeinrichtung für eine Magnetronanordnung mit einem rotierenden Target
WO2011094060A2 (en) * 2010-01-29 2011-08-04 Applied Materials, Inc. Pump baffle design for integrated pump and sputter source
DE102010063685B4 (de) * 2010-02-21 2012-07-12 Von Ardenne Anlagentechnik Gmbh Magnetronanordnung mit einem Hohltarget
EP2371992B1 (de) * 2010-04-01 2013-06-05 Applied Materials, Inc. Endblock und Zerstäubungsvorrichtung
EP2372744B1 (de) * 2010-04-01 2016-01-13 Applied Materials, Inc. Vorrichtung zum Stützen eines drehbaren Targets und Sputter-Installation
RU2013103041A (ru) * 2010-07-12 2014-08-20 Мэтиреон Эдвансд Мэтириэлз Текнолоджиз Энд Сервисез Инк. Узел соединения опорной трубки с вращающейся мишенью
US9334563B2 (en) 2010-07-12 2016-05-10 Materion Corporation Direct cooled rotary sputtering target
WO2013003458A1 (en) 2011-06-27 2013-01-03 Soleras Ltd. Sputtering target
KR20130136856A (ko) * 2012-06-05 2013-12-13 주식회사 씨티씨 스퍼터링 소스 및 이를 포함하는 원통형 스퍼터링 장치
KR101441481B1 (ko) * 2012-09-11 2014-09-17 주식회사 에스에프에이 회전형 캐소드 및 이를 구비한 스퍼터 장치
US20140110245A1 (en) * 2012-10-18 2014-04-24 Primestar Solar, Inc. Non-bonded rotatable targets and their methods of sputtering
JP6415957B2 (ja) * 2014-12-09 2018-10-31 株式会社アルバック ロータリーカソード、および、スパッタ装置
CN104619107A (zh) * 2015-01-12 2015-05-13 广东韦达尔科技有限公司 一种等离子电磁式旋转处理装置
CN104640339A (zh) * 2015-01-12 2015-05-20 广东韦达尔科技有限公司 一种等离子表面处理装置
KR101694197B1 (ko) 2015-03-25 2017-01-09 주식회사 에스에프에이 스퍼터 장치
KR101687302B1 (ko) 2015-06-12 2016-12-16 주식회사 에스에프에이 스퍼터 장치
BE1024754B9 (nl) * 2016-11-29 2018-07-24 Soleras Advanced Coatings Bvba Een universeel monteerbaar eindblok
KR102462111B1 (ko) 2020-09-14 2022-11-02 주식회사 케이씨엠씨 회전형 캐소드 및 이를 구비한 스퍼터 장치
JP7303393B2 (ja) * 2020-09-16 2023-07-04 株式会社アルバック 回転式カソードユニット用の駆動ブロック
JP7437525B2 (ja) * 2020-10-08 2024-02-22 株式会社アルバック 回転式カソードユニット用の駆動ブロック
CN112746260B (zh) * 2020-12-30 2023-02-28 湖南柯盛新材料有限公司 一种冷喷涂制造旋转靶材的工艺及其生产设备
CN113755803B (zh) * 2021-08-13 2023-11-28 中山凯旋真空科技股份有限公司 旋转驱动机构及平面阴极装置
DE102021129523A1 (de) * 2021-11-12 2023-05-17 VON ARDENNE Asset GmbH & Co. KG Magnetsystem, Sputtervorrichtung und Gehäusedeckel
KR102891132B1 (ko) 2022-01-20 2025-11-26 주식회사 케이씨엠씨 Rf 전원용 회전형 캐소드 및 이를 구비한 스퍼터 장치
KR102784487B1 (ko) 2022-01-20 2025-03-21 주식회사 케이씨엠씨 회전형 캐소드 및 이를 구비한 스퍼터 장치
KR102784488B1 (ko) 2022-02-07 2025-03-21 주식회사 케이씨엠씨 회전형 캐소드 및 이를 구비한 스퍼터 장치
CN115691853B (zh) * 2022-09-26 2024-01-23 中国核动力研究设计院 一种用于研究堆同位素辐照生产的辐照靶件及组装方法
KR20240156000A (ko) 2023-04-21 2024-10-29 주식회사 케이씨엠씨 회전형 캐소드 및 이를 구비한 스퍼터 장치
KR20250155774A (ko) 2024-04-24 2025-10-31 주식회사 케이씨엠씨 회전형 캐소드 및 이를 구비한 스퍼터 장치

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US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4443318A (en) * 1983-08-17 1984-04-17 Shatterproof Glass Corporation Cathodic sputtering apparatus
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Also Published As

Publication number Publication date
US20060157346A1 (en) 2006-07-20
EP1641956A1 (de) 2006-04-05
JP2009513818A (ja) 2009-04-02
EP1641956B1 (de) 2009-03-25
KR20060111896A (ko) 2006-10-30
DE602004020227D1 (de) 2009-05-07
WO2005005682A1 (en) 2005-01-20

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Legal Events

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