DE602004004944D1 - Piezoelektrischer Oszillator, dessen Herstellungsverfahren, Mobiltelefongerät mit piezoelektrischem Oszillator, und elektronisches Gerät mit piezoelektrischem Oszillator - Google Patents

Piezoelektrischer Oszillator, dessen Herstellungsverfahren, Mobiltelefongerät mit piezoelektrischem Oszillator, und elektronisches Gerät mit piezoelektrischem Oszillator

Info

Publication number
DE602004004944D1
DE602004004944D1 DE602004004944T DE602004004944T DE602004004944D1 DE 602004004944 D1 DE602004004944 D1 DE 602004004944D1 DE 602004004944 T DE602004004944 T DE 602004004944T DE 602004004944 T DE602004004944 T DE 602004004944T DE 602004004944 D1 DE602004004944 D1 DE 602004004944D1
Authority
DE
Germany
Prior art keywords
piezoelectric oscillator
manufacturing
mobile telephone
electronic apparatus
telephone apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004004944T
Other languages
English (en)
Other versions
DE602004004944T2 (de
Inventor
Kazuhiko Shimodaira
Yugo Koyama
Juichiro Matsuzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE602004004944D1 publication Critical patent/DE602004004944D1/de
Application granted granted Critical
Publication of DE602004004944T2 publication Critical patent/DE602004004944T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0552—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the device and the other elements being mounted on opposite sides of a common substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/21—Crystal tuning forks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0492—Resonance frequency during the manufacture of a tuning-fork

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
DE602004004944T 2003-06-16 2004-06-16 Piezoelektrischer Oszillator, dessen Herstellungsverfahren, Mobiltelefongerät mit piezoelektrischem Oszillator, und elektronisches Gerät mit piezoelektrischem Oszillator Expired - Lifetime DE602004004944T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003170897 2003-06-16
JP2003170897 2003-06-16
JP2004069256 2004-03-11
JP2004069256A JP3783235B2 (ja) 2003-06-16 2004-03-11 圧電発振器とその製造方法ならびに圧電発振器を利用した携帯電話装置および圧電発振器を利用した電子機器

Publications (2)

Publication Number Publication Date
DE602004004944D1 true DE602004004944D1 (de) 2007-04-12
DE602004004944T2 DE602004004944T2 (de) 2007-11-08

Family

ID=33422157

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004004944T Expired - Lifetime DE602004004944T2 (de) 2003-06-16 2004-06-16 Piezoelektrischer Oszillator, dessen Herstellungsverfahren, Mobiltelefongerät mit piezoelektrischem Oszillator, und elektronisches Gerät mit piezoelektrischem Oszillator

Country Status (7)

Country Link
US (1) US7218036B2 (de)
EP (1) EP1489736B1 (de)
JP (1) JP3783235B2 (de)
KR (1) KR100657069B1 (de)
CN (1) CN100452649C (de)
DE (1) DE602004004944T2 (de)
TW (1) TWI280733B (de)

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JP3841304B2 (ja) * 2004-02-17 2006-11-01 セイコーエプソン株式会社 圧電発振器、及びその製造方法
JP4238779B2 (ja) * 2004-05-28 2009-03-18 セイコーエプソン株式会社 圧電発振器および電子機器
JP4676285B2 (ja) * 2005-08-30 2011-04-27 セイコーインスツル株式会社 表面実装型圧電振動子とその製造方法、発振器、電子機器及び電波時計
JP4534912B2 (ja) * 2005-08-30 2010-09-01 株式会社デンソー 角速度センサの取付構造
JP2007074066A (ja) * 2005-09-05 2007-03-22 Seiko Epson Corp 圧電デバイス
JP2007173431A (ja) * 2005-12-21 2007-07-05 Epson Toyocom Corp 圧電デバイス
JP2007189380A (ja) * 2006-01-12 2007-07-26 Epson Toyocom Corp 圧電デバイス及び電子機器
US7523197B2 (en) * 2006-03-09 2009-04-21 International Business Machines Corporation Method for IP address discovery in rapidly changing network environment
JP4240053B2 (ja) * 2006-04-24 2009-03-18 エプソントヨコム株式会社 圧電発振器とその製造方法
US7759843B2 (en) * 2006-07-20 2010-07-20 Epson Toyocom Corporation Highly stable piezoelectric oscillator, manufacturing method thereof, piezoelectric resonator storage case, and heat source unit
JP2008035383A (ja) * 2006-07-31 2008-02-14 Epson Toyocom Corp 圧電デバイスおよび圧電デバイスの製造方法
US7876168B2 (en) * 2007-12-14 2011-01-25 Epson Toyocom Corporation Piezoelectric oscillator and method for manufacturing the same
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JP5360371B2 (ja) * 2008-12-16 2013-12-04 セイコーエプソン株式会社 電子デバイス
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US8659207B2 (en) * 2011-11-24 2014-02-25 Htc Corporation Electronic device and adjustment method thereof
JP6085421B2 (ja) * 2012-04-27 2017-02-22 ラピスセミコンダクタ株式会社 半導体装置の製造方法
JP5952074B2 (ja) * 2012-04-27 2016-07-13 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
JP5281175B1 (ja) * 2012-04-27 2013-09-04 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
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JP5565544B2 (ja) * 2012-08-01 2014-08-06 株式会社村田製作所 電子部品及び電子部品モジュール
JP5980632B2 (ja) * 2012-09-13 2016-08-31 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
JP6017901B2 (ja) 2012-09-14 2016-11-02 ラピスセミコンダクタ株式会社 半導体装置および計測装置
JP6369191B2 (ja) 2014-07-18 2018-08-08 セイコーエプソン株式会社 回路装置、電子機器、移動体及び無線通信システム
USD760230S1 (en) * 2014-09-16 2016-06-28 Daishinku Corporation Piezoelectric vibration device
JP6822791B2 (ja) 2016-07-04 2021-01-27 ラピスセミコンダクタ株式会社 半導体装置および半導体チップ
JP6346227B2 (ja) * 2016-08-03 2018-06-20 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
JP6493994B2 (ja) * 2017-03-21 2019-04-03 ラピスセミコンダクタ株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
DE602004004944T2 (de) 2007-11-08
CN1574623A (zh) 2005-02-02
EP1489736A2 (de) 2004-12-22
TWI280733B (en) 2007-05-01
CN100452649C (zh) 2009-01-14
US7218036B2 (en) 2007-05-15
KR20040108335A (ko) 2004-12-23
EP1489736B1 (de) 2007-02-28
TW200501549A (en) 2005-01-01
EP1489736A3 (de) 2006-02-01
KR100657069B1 (ko) 2006-12-13
JP2005033761A (ja) 2005-02-03
US20050012559A1 (en) 2005-01-20
JP3783235B2 (ja) 2006-06-07

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