DE60144249D1 - Verfahren und vorrichtung zum untersuchen eines substrats - Google Patents
Verfahren und vorrichtung zum untersuchen eines substratsInfo
- Publication number
- DE60144249D1 DE60144249D1 DE60144249T DE60144249T DE60144249D1 DE 60144249 D1 DE60144249 D1 DE 60144249D1 DE 60144249 T DE60144249 T DE 60144249T DE 60144249 T DE60144249 T DE 60144249T DE 60144249 D1 DE60144249 D1 DE 60144249D1
- Authority
- DE
- Germany
- Prior art keywords
- investigating
- substrate
- review
- inspection
- defects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/203—Measuring back scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
- G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
- G03F1/86—Inspecting by charged particle beam [CPB]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/304—Accessories, mechanical or electrical features electric circuits, signal processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/646—Specific applications or type of materials flaws, defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Immunology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25616800P | 2000-12-15 | 2000-12-15 | |
PCT/US2001/048646 WO2002049080A2 (en) | 2000-12-15 | 2001-12-14 | Method and apparatus for inspecting a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60144249D1 true DE60144249D1 (de) | 2011-04-28 |
Family
ID=22971311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60144249T Expired - Lifetime DE60144249D1 (de) | 2000-12-15 | 2001-12-14 | Verfahren und vorrichtung zum untersuchen eines substrats |
Country Status (6)
Country | Link |
---|---|
US (4) | US7171038B2 (de) |
EP (1) | EP1358623B1 (de) |
JP (1) | JP3990981B2 (de) |
AT (1) | ATE502295T1 (de) |
DE (1) | DE60144249D1 (de) |
WO (1) | WO2002049080A2 (de) |
Families Citing this family (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6591003B2 (en) * | 2001-03-28 | 2003-07-08 | Visiongate, Inc. | Optical tomography of small moving objects using time delay and integration imaging |
US20060023219A1 (en) * | 2001-03-28 | 2006-02-02 | Meyer Michael G | Optical tomography of small objects using parallel ray illumination and post-specimen optical magnification |
US6944322B2 (en) | 2001-03-28 | 2005-09-13 | Visiongate, Inc. | Optical tomography of small objects using parallel ray illumination and post-specimen optical magnification |
US7907765B2 (en) * | 2001-03-28 | 2011-03-15 | University Of Washington | Focal plane tracking for optical microtomography |
US6741730B2 (en) | 2001-08-10 | 2004-05-25 | Visiongate, Inc. | Method and apparatus for three-dimensional imaging in the fourier domain |
US7738945B2 (en) * | 2002-04-19 | 2010-06-15 | University Of Washington | Method and apparatus for pseudo-projection formation for optical tomography |
US7811825B2 (en) * | 2002-04-19 | 2010-10-12 | University Of Washington | System and method for processing specimens and images for optical tomography |
US7260253B2 (en) * | 2002-04-19 | 2007-08-21 | Visiongate, Inc. | Method for correction of relative object-detector motion between successive views |
US7197355B2 (en) | 2002-04-19 | 2007-03-27 | Visiongate, Inc. | Variable-motion optical tomography of small objects |
US6697508B2 (en) | 2002-05-10 | 2004-02-24 | Visiongate, Inc. | Tomographic reconstruction of small objects using a priori knowledge |
US6770893B2 (en) * | 2002-05-13 | 2004-08-03 | Visiongate, Inc. | Method and apparatus for emission computed tomography using temporal signatures |
KR100503530B1 (ko) * | 2003-01-02 | 2005-07-22 | 삼성전자주식회사 | 웨이퍼의 불량검출 장치 및 방법 |
KR100503513B1 (ko) * | 2003-01-08 | 2005-07-26 | 삼성전자주식회사 | 웨이퍼의 불량검출 장치 및 방법 |
US6812462B1 (en) | 2003-02-21 | 2004-11-02 | Kla-Tencor Technologies Corporation | Dual electron beam instrument for multi-perspective |
JP4266668B2 (ja) * | 2003-02-25 | 2009-05-20 | 株式会社ルネサステクノロジ | シミュレーション装置 |
US7135675B1 (en) * | 2003-03-10 | 2006-11-14 | Kla-Tencor Technologies Corporation | Multi-pixel and multi-column electron emission inspector |
JP4331558B2 (ja) * | 2003-10-01 | 2009-09-16 | 株式会社日立ハイテクノロジーズ | 被検査物の外観検査方法及び外観検査装置 |
US7234128B2 (en) * | 2003-10-03 | 2007-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for improving the critical dimension uniformity of patterned features on wafers |
JP4136883B2 (ja) * | 2003-10-03 | 2008-08-20 | 株式会社日立ハイテクノロジーズ | 欠陥観察方法 |
US6991738B1 (en) | 2004-10-13 | 2006-01-31 | University Of Washington | Flow-through drum centrifuge |
US20060096358A1 (en) * | 2004-10-28 | 2006-05-11 | University Of Washington | Optical projection tomography microscope |
US7494809B2 (en) | 2004-11-09 | 2009-02-24 | Visiongate, Inc. | Automated cell sample enrichment preparation method |
JP5033310B2 (ja) * | 2005-02-18 | 2012-09-26 | 株式会社日立ハイテクノロジーズ | 検査装置 |
US7391034B1 (en) * | 2005-03-16 | 2008-06-24 | Kla-Tencor Technologies Corporation | Electron imaging beam with reduced space charge defocusing |
JP2006308376A (ja) * | 2005-04-27 | 2006-11-09 | Tokyo Seimitsu Co Ltd | 外観検査装置及び外観検査方法 |
JP4943733B2 (ja) * | 2005-04-28 | 2012-05-30 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビームを用いた検査方法及び検査装置 |
US7462828B2 (en) * | 2005-04-28 | 2008-12-09 | Hitachi High-Technologies Corporation | Inspection method and inspection system using charged particle beam |
US20090174554A1 (en) | 2005-05-11 | 2009-07-09 | Eric Bergeron | Method and system for screening luggage items, cargo containers or persons |
US7991242B2 (en) | 2005-05-11 | 2011-08-02 | Optosecurity Inc. | Apparatus, method and system for screening receptacles and persons, having image distortion correction functionality |
US7440608B2 (en) * | 2005-05-31 | 2008-10-21 | Hewlett-Packard Development Company, L.P. | Method and system for detecting image defects |
US9037280B2 (en) * | 2005-06-06 | 2015-05-19 | Kla-Tencor Technologies Corp. | Computer-implemented methods for performing one or more defect-related functions |
US7570800B2 (en) * | 2005-12-14 | 2009-08-04 | Kla-Tencor Technologies Corp. | Methods and systems for binning defects detected on a specimen |
US8103087B2 (en) * | 2006-01-20 | 2012-01-24 | Hitachi High-Technologies Corporation | Fault inspection method |
JP4843319B2 (ja) * | 2006-01-26 | 2011-12-21 | 株式会社日立ハイテクノロジーズ | 走査型電子顕微鏡 |
DE102006042956B4 (de) * | 2006-04-07 | 2009-10-01 | Vistec Semiconductor Systems Gmbh | Verfahren zur optischen Inspektion und Visualisierung der von scheibenförmigen Objekten gewonnenen optischen Messwerte |
US7586607B2 (en) | 2006-04-21 | 2009-09-08 | Rudolph Technologies, Inc. | Polarization imaging |
US7899232B2 (en) | 2006-05-11 | 2011-03-01 | Optosecurity Inc. | Method and apparatus for providing threat image projection (TIP) in a luggage screening system, and luggage screening system implementing same |
US8494210B2 (en) | 2007-03-30 | 2013-07-23 | Optosecurity Inc. | User interface for use in security screening providing image enhancement capabilities and apparatus for implementing same |
US8577171B1 (en) * | 2006-07-31 | 2013-11-05 | Gatan, Inc. | Method for normalizing multi-gain images |
US7903865B2 (en) * | 2007-03-27 | 2011-03-08 | Chuang Hwa University | Automatic optical inspection system and method |
JP5223069B2 (ja) * | 2007-04-25 | 2013-06-26 | 独立行政法人理化学研究所 | 標本の分析方法およびそれを利用した針状領域の分析装置 |
US7835561B2 (en) | 2007-05-18 | 2010-11-16 | Visiongate, Inc. | Method for image processing and reconstruction of images for optical tomography |
JP5004659B2 (ja) * | 2007-05-22 | 2012-08-22 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
JP5110977B2 (ja) * | 2007-06-22 | 2012-12-26 | 株式会社日立ハイテクノロジーズ | 欠陥観察装置及びその方法 |
SG149763A1 (en) * | 2007-07-12 | 2009-02-27 | Applied Materials Israel Ltd | Method and system for evaluating an object that has a repetitive pattern |
US7787112B2 (en) | 2007-10-22 | 2010-08-31 | Visiongate, Inc. | Depth of field extension for optical tomography |
JP4537467B2 (ja) * | 2008-03-18 | 2010-09-01 | アドバンスド・マスク・インスペクション・テクノロジー株式会社 | 試料検査装置及び試料検査方法 |
US8283631B2 (en) * | 2008-05-08 | 2012-10-09 | Kla-Tencor Corporation | In-situ differential spectroscopy |
US7952073B2 (en) * | 2008-08-01 | 2011-05-31 | Direct Electron, Lp | Apparatus and method including a direct bombardment detector and a secondary detector for use in electron microscopy |
JP5255953B2 (ja) * | 2008-08-28 | 2013-08-07 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及び装置 |
TWI521624B (zh) * | 2009-02-18 | 2016-02-11 | 魯道夫科技股份有限公司 | 偏振成像技術 |
JP5388703B2 (ja) * | 2009-06-03 | 2014-01-15 | 株式会社日立ハイテクノロジーズ | 表面観察装置および表面観察方法 |
JP5694317B2 (ja) * | 2009-07-17 | 2015-04-01 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | 荷電粒子エネルギー分析器装置および方法 |
US8934703B2 (en) * | 2009-10-05 | 2015-01-13 | Kawasaki Jukogyo Kabushiki Kaisha | Determination assist system of ultrasonic testing, determination assist method of ultrasonic testing, determination assist program of ultrasonic testing, and computer-readable storage medium for storing determination assist program of ultrasonic testing |
JP5525919B2 (ja) * | 2010-05-28 | 2014-06-18 | 株式会社東芝 | 欠陥検査方法および欠陥検査装置 |
CN103069436B (zh) * | 2010-08-05 | 2017-02-08 | 奥博泰克有限公司 | 照明系统 |
KR101642897B1 (ko) * | 2011-07-13 | 2016-07-26 | 주식회사 고영테크놀러지 | 검사방법 |
JP6025849B2 (ja) | 2011-09-07 | 2016-11-16 | ラピスカン システムズ、インコーポレイテッド | マニフェストデータをイメージング/検知処理に統合するx線検査システム |
US8502146B2 (en) * | 2011-10-03 | 2013-08-06 | Kla-Tencor Corporation | Methods and apparatus for classification of defects using surface height attributes |
US9389166B2 (en) * | 2011-12-16 | 2016-07-12 | Kla-Tencor Corporation | Enhanced high-speed logarithmic photo-detector for spot scanning system |
US8723115B2 (en) * | 2012-03-27 | 2014-05-13 | Kla-Tencor Corporation | Method and apparatus for detecting buried defects |
JP6150991B2 (ja) | 2012-07-18 | 2017-06-21 | 株式会社日立ハイテクノロジーズ | 電子ビーム照射装置 |
US8948494B2 (en) | 2012-11-12 | 2015-02-03 | Kla-Tencor Corp. | Unbiased wafer defect samples |
US9619876B2 (en) | 2013-03-12 | 2017-04-11 | Kla-Tencor Corp. | Detecting defects on wafers based on 2D scatter plots of values determined for output generated using different optics modes |
JP6124679B2 (ja) * | 2013-05-15 | 2017-05-10 | 日本電子株式会社 | 走査荷電粒子顕微鏡および画像取得方法 |
US9449788B2 (en) | 2013-09-28 | 2016-09-20 | Kla-Tencor Corporation | Enhanced defect detection in electron beam inspection and review |
US10267746B2 (en) * | 2014-10-22 | 2019-04-23 | Kla-Tencor Corp. | Automated pattern fidelity measurement plan generation |
WO2016128190A1 (en) * | 2015-02-12 | 2016-08-18 | Asml Netherlands B.V. | Method and apparatus for reticle optimization |
US9805910B1 (en) * | 2015-03-14 | 2017-10-31 | Kla-Tencor Corporation | Automated SEM nanoprobe tool |
US9899185B1 (en) * | 2015-04-21 | 2018-02-20 | Applied Materials Israel Ltd. | Resolving ambiguities in an energy spectrum |
US10192716B2 (en) | 2015-09-21 | 2019-01-29 | Kla-Tencor Corporation | Multi-beam dark field imaging |
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-
2001
- 2001-12-14 JP JP2002550296A patent/JP3990981B2/ja not_active Expired - Lifetime
- 2001-12-14 DE DE60144249T patent/DE60144249D1/de not_active Expired - Lifetime
- 2001-12-14 US US10/017,860 patent/US7171038B2/en not_active Expired - Lifetime
- 2001-12-14 AT AT01992140T patent/ATE502295T1/de not_active IP Right Cessation
- 2001-12-14 EP EP01992140A patent/EP1358623B1/de not_active Expired - Lifetime
- 2001-12-14 WO PCT/US2001/048646 patent/WO2002049080A2/en active Application Filing
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2006
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- 2006-10-04 US US11/542,822 patent/US9170503B2/en active Active
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2016
- 2016-11-15 US US15/352,398 patent/US20170074810A1/en not_active Abandoned
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ATE502295T1 (de) | 2011-04-15 |
WO2002049080A3 (en) | 2002-08-15 |
US7171038B2 (en) | 2007-01-30 |
EP1358623A2 (de) | 2003-11-05 |
WO2002049080A2 (en) | 2002-06-20 |
US20020161534A1 (en) | 2002-10-31 |
EP1358623A4 (de) | 2006-04-26 |
JP3990981B2 (ja) | 2007-10-17 |
US9170503B2 (en) | 2015-10-27 |
EP1358623B1 (de) | 2011-03-16 |
US20170074810A1 (en) | 2017-03-16 |
US20070230768A1 (en) | 2007-10-04 |
US20070025610A1 (en) | 2007-02-01 |
JP2004516461A (ja) | 2004-06-03 |
US9529279B2 (en) | 2016-12-27 |
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