DE60136515D1 - Zerstäubungsgerät und Schichtherstellungsverfahren - Google Patents

Zerstäubungsgerät und Schichtherstellungsverfahren

Info

Publication number
DE60136515D1
DE60136515D1 DE60136515T DE60136515T DE60136515D1 DE 60136515 D1 DE60136515 D1 DE 60136515D1 DE 60136515 T DE60136515 T DE 60136515T DE 60136515 T DE60136515 T DE 60136515T DE 60136515 D1 DE60136515 D1 DE 60136515D1
Authority
DE
Germany
Prior art keywords
manufacturing process
atomizing device
coating manufacturing
coating
atomizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60136515T
Other languages
English (en)
Inventor
Naoki Morimoto
Tomoyasu Kondo
Hideto Nagashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Application granted granted Critical
Publication of DE60136515D1 publication Critical patent/DE60136515D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Plasma Technology (AREA)
DE60136515T 2000-09-07 2001-09-06 Zerstäubungsgerät und Schichtherstellungsverfahren Expired - Lifetime DE60136515D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000270880A JP4703828B2 (ja) 2000-09-07 2000-09-07 スパッタリング装置及び薄膜製造方法

Publications (1)

Publication Number Publication Date
DE60136515D1 true DE60136515D1 (de) 2008-12-24

Family

ID=18757247

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60136515T Expired - Lifetime DE60136515D1 (de) 2000-09-07 2001-09-06 Zerstäubungsgerät und Schichtherstellungsverfahren

Country Status (7)

Country Link
US (1) US6706155B2 (de)
EP (1) EP1187172B1 (de)
JP (1) JP4703828B2 (de)
KR (1) KR100727329B1 (de)
DE (1) DE60136515D1 (de)
IL (1) IL145212A0 (de)
TW (1) TW593714B (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US7781327B1 (en) 2001-03-13 2010-08-24 Novellus Systems, Inc. Resputtering process for eliminating dielectric damage
US8043484B1 (en) 2001-03-13 2011-10-25 Novellus Systems, Inc. Methods and apparatus for resputtering process that improves barrier coverage
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
US8298933B2 (en) 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
JP4493284B2 (ja) * 2003-05-26 2010-06-30 キヤノンアネルバ株式会社 スパッタリング装置
US8500973B2 (en) * 2004-08-20 2013-08-06 Jds Uniphase Corporation Anode for sputter coating
JP4922581B2 (ja) * 2005-07-29 2012-04-25 株式会社アルバック スパッタリング装置及びスパッタリング方法
JP4922580B2 (ja) * 2005-07-29 2012-04-25 株式会社アルバック スパッタリング装置及びスパッタリング方法
US7855147B1 (en) 2006-06-22 2010-12-21 Novellus Systems, Inc. Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US7645696B1 (en) 2006-06-22 2010-01-12 Novellus Systems, Inc. Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer
JP5014696B2 (ja) * 2006-07-19 2012-08-29 株式会社アルバック 薄膜形成方法、銅配線膜形成方法
JP4142706B2 (ja) * 2006-09-28 2008-09-03 富士フイルム株式会社 成膜装置、成膜方法、絶縁膜、誘電体膜、圧電膜、強誘電体膜、圧電素子および液体吐出装置
US7510634B1 (en) 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
US7682966B1 (en) 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US20080257263A1 (en) * 2007-04-23 2008-10-23 Applied Materials, Inc. Cooling shield for substrate processing chamber
US7922880B1 (en) 2007-05-24 2011-04-12 Novellus Systems, Inc. Method and apparatus for increasing local plasma density in magnetically confined plasma
US7897516B1 (en) 2007-05-24 2011-03-01 Novellus Systems, Inc. Use of ultra-high magnetic fields in resputter and plasma etching
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
US8017523B1 (en) 2008-05-16 2011-09-13 Novellus Systems, Inc. Deposition of doped copper seed layers having improved reliability
DE102008028542B4 (de) * 2008-06-16 2012-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Abscheiden einer Schicht auf einem Substrat mittels einer plasmagestützten chemischen Reaktion
EP2159820B1 (de) 2008-08-25 2018-04-11 Oerlikon Surface Solutions AG, Pfäffikon Vorrichtung zur Beschichtung durch Ablagerung physikalischer Dämpfe sowie Verfahren zur Ablagerung physikalischer Dämpfe
WO2010058366A1 (en) 2008-11-24 2010-05-27 Oc Oerlikon Balzers Ag Rf sputtering arrangement
US8834685B2 (en) 2008-12-15 2014-09-16 Ulvac, Inc. Sputtering apparatus and sputtering method
JP5773346B2 (ja) * 2009-03-12 2015-09-02 株式会社アルバック セルフイオンスパッタリング装置
KR20130133073A (ko) * 2009-03-25 2013-12-05 시바우라 메카트로닉스 가부시끼가이샤 스퍼터 성막 장치
WO2011007832A1 (ja) * 2009-07-17 2011-01-20 株式会社アルバック 成膜装置
KR101438129B1 (ko) 2010-04-02 2014-09-05 가부시키가이샤 알박 스퍼터링 장치
JP5654939B2 (ja) * 2011-04-20 2015-01-14 株式会社アルバック 成膜装置
JP2013020737A (ja) * 2011-07-08 2013-01-31 Nissin Ion Equipment Co Ltd 防着板支持部材およびこれを備えたイオン源
JP5843602B2 (ja) * 2011-12-22 2016-01-13 キヤノンアネルバ株式会社 プラズマ処理装置
JP7223738B2 (ja) * 2020-11-12 2023-02-16 株式会社アルバック スパッタリング装置
JPWO2023026908A1 (de) * 2021-08-27 2023-03-02
CN114178067B (zh) * 2022-01-14 2023-04-28 苏州新维度微纳科技有限公司 纳米压印胶体溅射装置及方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0834002B2 (ja) * 1988-07-15 1996-03-29 三菱化学株式会社 磁気記録媒体の製造方法
US5316645A (en) * 1990-08-07 1994-05-31 Canon Kabushiki Kaisha Plasma processing apparatus
US5106474A (en) * 1990-11-21 1992-04-21 Viratec Thin Films, Inc. Anode structures for magnetron sputtering apparatus
US6296743B1 (en) * 1993-04-02 2001-10-02 Applied Materials, Inc. Apparatus for DC reactive plasma vapor deposition of an electrically insulating material using a shielded secondary anode
US5897752A (en) * 1997-05-20 1999-04-27 Applied Materials, Inc. Wafer bias ring in a sustained self-sputtering reactor
JPH11229132A (ja) * 1998-02-19 1999-08-24 Toshiba Corp スパッタ成膜装置およびスパッタ成膜方法
JP3686540B2 (ja) * 1998-12-22 2005-08-24 株式会社ルネサステクノロジ 電子デバイスの製造方法
JP5026631B2 (ja) * 1999-06-24 2012-09-12 株式会社アルバック スパッタリング装置
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
JP4021601B2 (ja) * 1999-10-29 2007-12-12 株式会社東芝 スパッタ装置および成膜方法

Also Published As

Publication number Publication date
KR100727329B1 (ko) 2007-06-12
KR20020020178A (ko) 2002-03-14
IL145212A0 (en) 2002-06-30
US20020029960A1 (en) 2002-03-14
JP2002080962A (ja) 2002-03-22
EP1187172B1 (de) 2008-11-12
TW593714B (en) 2004-06-21
JP4703828B2 (ja) 2011-06-15
EP1187172A3 (de) 2005-11-23
US6706155B2 (en) 2004-03-16
EP1187172A2 (de) 2002-03-13

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Legal Events

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8364 No opposition during term of opposition