DE60128501D1 - Zusammensetzung zur Entschichtung von Photoresist - Google Patents
Zusammensetzung zur Entschichtung von PhotoresistInfo
- Publication number
- DE60128501D1 DE60128501D1 DE60128501T DE60128501T DE60128501D1 DE 60128501 D1 DE60128501 D1 DE 60128501D1 DE 60128501 T DE60128501 T DE 60128501T DE 60128501 T DE60128501 T DE 60128501T DE 60128501 D1 DE60128501 D1 DE 60128501D1
- Authority
- DE
- Germany
- Prior art keywords
- composition
- removing photoresist
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920002120 photoresistant polymer Polymers 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/514,065 US6531436B1 (en) | 2000-02-25 | 2000-02-25 | Polymer removal |
US514065 | 2000-02-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60128501D1 true DE60128501D1 (de) | 2007-07-05 |
DE60128501T2 DE60128501T2 (de) | 2008-01-17 |
Family
ID=24045656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60128501T Expired - Fee Related DE60128501T2 (de) | 2000-02-25 | 2001-02-22 | Zusammensetzung zur Entschichtung von Photoresist |
Country Status (6)
Country | Link |
---|---|
US (1) | US6531436B1 (de) |
EP (1) | EP1128222B1 (de) |
JP (1) | JP2002012897A (de) |
KR (1) | KR100740957B1 (de) |
DE (1) | DE60128501T2 (de) |
TW (1) | TWI296071B (de) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6825156B2 (en) * | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
US7135445B2 (en) * | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
JP3738996B2 (ja) * | 2002-10-10 | 2006-01-25 | 東京応化工業株式会社 | ホトリソグラフィー用洗浄液および基板の処理方法 |
JP3403187B2 (ja) * | 2001-08-03 | 2003-05-06 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
US7023650B2 (en) * | 2001-11-07 | 2006-04-04 | Quantum Corporation | Optical sensor to recording head alignment |
US7543592B2 (en) * | 2001-12-04 | 2009-06-09 | Ekc Technology, Inc. | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
US20030138737A1 (en) * | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
EP1468335A4 (de) * | 2002-01-11 | 2006-05-17 | Az Electronic Materials Usa | Reinigungsmittelzusammensetzung für einen positiv- oder negativ-fotoresist |
JP3799026B2 (ja) * | 2002-03-29 | 2006-07-19 | 三洋化成工業株式会社 | アルカリ洗浄剤 |
US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
JP4330529B2 (ja) * | 2002-06-07 | 2009-09-16 | マリンクロッド・ベイカー・インコーポレイテッド | マイクロエレクトロニクス洗浄およびarc除去組成物 |
US7297286B2 (en) * | 2002-07-29 | 2007-11-20 | Nanoclean Technologies, Inc. | Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants |
US7066789B2 (en) * | 2002-07-29 | 2006-06-27 | Manoclean Technologies, Inc. | Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants |
US7134941B2 (en) * | 2002-07-29 | 2006-11-14 | Nanoclean Technologies, Inc. | Methods for residue removal and corrosion prevention in a post-metal etch process |
US6764385B2 (en) * | 2002-07-29 | 2004-07-20 | Nanoclean Technologies, Inc. | Methods for resist stripping and cleaning surfaces substantially free of contaminants |
US7101260B2 (en) * | 2002-07-29 | 2006-09-05 | Nanoclean Technologies, Inc. | Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants |
JP4282054B2 (ja) * | 2002-09-09 | 2009-06-17 | 東京応化工業株式会社 | デュアルダマシン構造形成プロセスに用いられる洗浄液および基板の処理方法 |
TW200410912A (en) * | 2002-12-20 | 2004-07-01 | Au Optronics Corp | Method and device for cleaning glass substrate prior to coating of photoresist |
US20040220066A1 (en) * | 2003-05-01 | 2004-11-04 | Rohm And Haas Electronic Materials, L.L.C. | Stripper |
US20050032657A1 (en) * | 2003-08-06 | 2005-02-10 | Kane Sean Michael | Stripping and cleaning compositions for microelectronics |
US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
US7575853B2 (en) * | 2004-04-08 | 2009-08-18 | Tdk Corporation | Method of forming thin film pattern and method of forming magnetoresistive element |
US20060003910A1 (en) * | 2004-06-15 | 2006-01-05 | Hsu Jiun Y | Composition and method comprising same for removing residue from a substrate |
US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
US9217929B2 (en) * | 2004-07-22 | 2015-12-22 | Air Products And Chemicals, Inc. | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
US20060063687A1 (en) * | 2004-09-17 | 2006-03-23 | Minsek David W | Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate |
US20060094612A1 (en) * | 2004-11-04 | 2006-05-04 | Mayumi Kimura | Post etch cleaning composition for use with substrates having aluminum |
US20060154186A1 (en) * | 2005-01-07 | 2006-07-13 | Advanced Technology Materials, Inc. | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
KR101088568B1 (ko) | 2005-04-19 | 2011-12-05 | 아반토르 퍼포먼스 머티리얼스, 인크. | 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼 |
JP4741315B2 (ja) * | 2005-08-11 | 2011-08-03 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | ポリマー除去組成物 |
US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US20070243773A1 (en) * | 2005-10-28 | 2007-10-18 | Phenis Michael T | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US7632796B2 (en) * | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US8263539B2 (en) * | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
US7674755B2 (en) * | 2005-12-22 | 2010-03-09 | Air Products And Chemicals, Inc. | Formulation for removal of photoresist, etch residue and BARC |
US7374621B2 (en) * | 2006-02-09 | 2008-05-20 | Hitachi Global Storage Technologies Netherlands Bv | System and method for cleaning chemistry and processing during thin film magnetic head wafer fabrication |
TWI417683B (zh) | 2006-02-15 | 2013-12-01 | Avantor Performance Mat Inc | 用於微電子基板之穩定化,非水性清潔組合物 |
KR100793241B1 (ko) * | 2006-06-19 | 2008-01-10 | 삼성전자주식회사 | 실리콘 고분자 및 포토레지스트 제거용 조성물, 이를이용한 막 제거 방법 및 패턴 형성 방법 |
TWI338026B (en) * | 2007-01-05 | 2011-03-01 | Basf Electronic Materials Taiwan Ltd | Composition and method for stripping organic coatings |
US7655608B2 (en) * | 2007-08-03 | 2010-02-02 | Dynaloy, Llc | Reduced metal etch rates using stripper solutions containing a copper salt |
US8551682B2 (en) | 2007-08-15 | 2013-10-08 | Dynaloy, Llc | Metal conservation with stripper solutions containing resorcinol |
TWI450052B (zh) * | 2008-06-24 | 2014-08-21 | Dynaloy Llc | 用於後段製程操作有效之剝離溶液 |
CN102334069B (zh) | 2009-02-25 | 2013-07-10 | 安万托特性材料股份有限公司 | 基于多用途酸性有机溶剂的微电子清洗组合物 |
US8309502B2 (en) * | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
TWI539493B (zh) | 2010-03-08 | 2016-06-21 | 黛納羅伊有限責任公司 | 用於摻雜具有分子單層之矽基材之方法及組合物 |
TW201039076A (en) * | 2010-07-08 | 2010-11-01 | Rong yi chemical co ltd | Photoresist stripper |
US8987181B2 (en) | 2011-11-08 | 2015-03-24 | Dynaloy, Llc | Photoresist and post etch residue cleaning solution |
US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
KR101668063B1 (ko) * | 2013-05-07 | 2016-10-20 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법 |
JP2017026645A (ja) * | 2013-12-03 | 2017-02-02 | Jsr株式会社 | レジスト除去剤およびレジスト除去方法 |
US10073351B2 (en) * | 2014-12-23 | 2018-09-11 | Versum Materials Us, Llc | Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation |
US10072237B2 (en) * | 2015-08-05 | 2018-09-11 | Versum Materials Us, Llc | Photoresist cleaning composition used in photolithography and a method for treating substrate therewith |
KR102384908B1 (ko) * | 2015-11-25 | 2022-04-08 | 삼성전자주식회사 | 자성 패턴 세정 조성물, 자성 패턴 형성 방법 및 자기 메모리 장치의 제조 방법 |
CN111630117B (zh) * | 2018-01-19 | 2023-04-04 | Mti株式会社 | 用于剥离切割工艺用保护性涂层剂的剥离剂 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58139430A (ja) | 1982-02-15 | 1983-08-18 | Toray Ind Inc | レジストの剥離法 |
US4401747A (en) | 1982-09-02 | 1983-08-30 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
US4970615A (en) * | 1989-05-26 | 1990-11-13 | Magnetic Peripherals Inc. | Pole design for thin film magnetic heads |
US5279771A (en) | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
US5988186A (en) | 1991-01-25 | 1999-11-23 | Ashland, Inc. | Aqueous stripping and cleaning compositions |
US5753601A (en) | 1991-01-25 | 1998-05-19 | Ashland Inc | Organic stripping composition |
US5480585A (en) | 1992-04-02 | 1996-01-02 | Nagase Electronic Chemicals, Ltd. | Stripping liquid compositions |
US5407788A (en) | 1993-06-24 | 1995-04-18 | At&T Corp. | Photoresist stripping method |
US5563119A (en) | 1995-01-26 | 1996-10-08 | Ashland Inc. | Stripping compositions containing alkanolamine compounds |
JP2911792B2 (ja) * | 1995-09-29 | 1999-06-23 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
JP3236220B2 (ja) | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
US5759973A (en) | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
-
2000
- 2000-02-25 US US09/514,065 patent/US6531436B1/en not_active Expired - Fee Related
-
2001
- 2001-02-22 DE DE60128501T patent/DE60128501T2/de not_active Expired - Fee Related
- 2001-02-22 EP EP01301616A patent/EP1128222B1/de not_active Expired - Lifetime
- 2001-02-23 TW TW090104230A patent/TWI296071B/zh not_active IP Right Cessation
- 2001-02-26 JP JP2001050130A patent/JP2002012897A/ja not_active Withdrawn
- 2001-02-26 KR KR1020010009695A patent/KR100740957B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6531436B1 (en) | 2003-03-11 |
TWI296071B (en) | 2008-04-21 |
KR100740957B1 (ko) | 2007-07-19 |
JP2002012897A (ja) | 2002-01-15 |
EP1128222A3 (de) | 2001-09-26 |
EP1128222B1 (de) | 2007-05-23 |
EP1128222A2 (de) | 2001-08-29 |
DE60128501T2 (de) | 2008-01-17 |
KR20010088362A (ko) | 2001-09-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |