DE60127021T2 - Esterverbindungen, Polymere, Photoresistkompositionen und Mustererzeugungsverfahren - Google Patents

Esterverbindungen, Polymere, Photoresistkompositionen und Mustererzeugungsverfahren Download PDF

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Publication number
DE60127021T2
DE60127021T2 DE60127021T DE60127021T DE60127021T2 DE 60127021 T2 DE60127021 T2 DE 60127021T2 DE 60127021 T DE60127021 T DE 60127021T DE 60127021 T DE60127021 T DE 60127021T DE 60127021 T2 DE60127021 T2 DE 60127021T2
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DE
Germany
Prior art keywords
carbon atoms
groups
group
branched
bis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60127021T
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German (de)
English (en)
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DE60127021D1 (de
Inventor
Koji Nakakubiki-gun Hasegawa
Tsunehiro Nakakubiki-gun Nishi
Takeshi Nakakubiki-gun Kinsho
Takeru Nakakubiki-gun Watanabe
Mutsuo Nakakubiki-gun Nakashima
Seiichiro Nakakubiki-gun Tachibana
Jun Nakakubiki-gun Hatakeyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin-Etsu Chemical Co Ltd
Original Assignee
Shin-Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Publication of DE60127021D1 publication Critical patent/DE60127021D1/de
Application granted granted Critical
Publication of DE60127021T2 publication Critical patent/DE60127021T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/56—Crotonic acid esters; Vinyl acetic acid esters
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/67—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids
    • C07C69/716—Esters of keto-carboxylic acids or aldehydo-carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/08—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having two condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • C08G61/08—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE60127021T 2000-04-27 2001-04-27 Esterverbindungen, Polymere, Photoresistkompositionen und Mustererzeugungsverfahren Expired - Lifetime DE60127021T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000127532 2000-04-27
JP2000127532 2000-04-27

Publications (2)

Publication Number Publication Date
DE60127021D1 DE60127021D1 (de) 2007-04-19
DE60127021T2 true DE60127021T2 (de) 2007-12-13

Family

ID=18637116

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60127021T Expired - Lifetime DE60127021T2 (de) 2000-04-27 2001-04-27 Esterverbindungen, Polymere, Photoresistkompositionen und Mustererzeugungsverfahren

Country Status (5)

Country Link
US (2) US6531627B2 (enExample)
EP (1) EP1149825B1 (enExample)
KR (1) KR100518993B1 (enExample)
DE (1) DE60127021T2 (enExample)
TW (1) TWI295284B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777157B1 (en) * 2000-02-26 2004-08-17 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising same
US6509135B2 (en) * 2000-03-06 2003-01-21 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process
JP3928690B2 (ja) * 2000-07-06 2007-06-13 信越化学工業株式会社 脂環構造を有する新規ラクトン化合物及びその製造方法
JP3589160B2 (ja) * 2000-07-07 2004-11-17 日本電気株式会社 レジスト用材料、化学増幅型レジスト及びそれを用いたパターン形成方法
KR100555288B1 (ko) * 2000-09-14 2006-03-03 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트　재료 및 패턴　형성 방법
JP4469080B2 (ja) * 2000-12-13 2010-05-26 信越化学工業株式会社 脂環構造を有する新規第三級アルコール化合物
JP4225699B2 (ja) 2001-03-12 2009-02-18 富士フイルム株式会社 ポジ型感光性組成物
EP1276012B1 (en) 2001-07-13 2016-03-23 Shin-Etsu Chemical Co., Ltd. Resist patterning process
US7189491B2 (en) * 2003-12-11 2007-03-13 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266728A (en) * 1991-08-20 1993-11-30 Chisso Corporation Method for producing optically active 3-substituted-2-norbornanones and their intermediates
AU747516C (en) * 1997-09-12 2003-07-24 B.F. Goodrich Company, The Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
KR100334387B1 (ko) * 1997-12-31 2002-11-22 주식회사 하이닉스반도체 공중합체수지와그제조방법및이수지를이용한포토레지스트
JPH11265067A (ja) * 1998-01-16 1999-09-28 Jsr Corp 感放射線性樹脂組成物
KR100557368B1 (ko) * 1998-01-16 2006-03-10 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
KR100271419B1 (ko) * 1998-09-23 2001-03-02 박찬구 화학증폭형 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물
KR100271420B1 (ko) * 1998-09-23 2001-03-02 박찬구 화학증폭형 양성 포토레지스트 조성물
DE60025297T2 (de) * 1999-09-17 2006-08-17 Jsr Corp. Strahlungsempfindliche Harzzusammensetzung

Also Published As

Publication number Publication date
DE60127021D1 (de) 2007-04-19
US6531627B2 (en) 2003-03-11
US20020007031A1 (en) 2002-01-17
US6670498B2 (en) 2003-12-30
TWI295284B (enExample) 2008-04-01
KR100518993B1 (ko) 2005-10-06
EP1149825A2 (en) 2001-10-31
EP1149825B1 (en) 2007-03-07
US20030088115A1 (en) 2003-05-08
KR20010104629A (ko) 2001-11-26
EP1149825A3 (en) 2003-03-26

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