DE60124674D1 - Heizelement für einen cvd-apparat - Google Patents

Heizelement für einen cvd-apparat

Info

Publication number
DE60124674D1
DE60124674D1 DE60124674T DE60124674T DE60124674D1 DE 60124674 D1 DE60124674 D1 DE 60124674D1 DE 60124674 T DE60124674 T DE 60124674T DE 60124674 T DE60124674 T DE 60124674T DE 60124674 D1 DE60124674 D1 DE 60124674D1
Authority
DE
Germany
Prior art keywords
heating element
space
processing container
connection part
part area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60124674T
Other languages
English (en)
Other versions
DE60124674T2 (de
Inventor
Hideki Matsumura
Atsushi Masuda
Keiji Ishibashi
Masahiko Tanaka
Minoru Karasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JAPAN GOVERNMENT
Canon Anelva Corp
Original Assignee
JAPAN GOVERNMENT
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JAPAN GOVERNMENT, Anelva Corp filed Critical JAPAN GOVERNMENT
Publication of DE60124674D1 publication Critical patent/DE60124674D1/de
Application granted granted Critical
Publication of DE60124674T2 publication Critical patent/DE60124674T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
DE60124674T 2000-09-14 2001-09-07 Heizelement für einen cvd-apparat Expired - Lifetime DE60124674T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000280375 2000-09-14
JP2000280375 2000-09-14
JP2001085326 2001-03-23
JP2001085326 2001-03-23
PCT/JP2001/007795 WO2002025712A1 (fr) 2000-09-14 2001-09-07 Dispositif de depot chimique en phase vapeur (cvd) a element chauffant

Publications (2)

Publication Number Publication Date
DE60124674D1 true DE60124674D1 (de) 2007-01-04
DE60124674T2 DE60124674T2 (de) 2007-09-13

Family

ID=26600026

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60124674T Expired - Lifetime DE60124674T2 (de) 2000-09-14 2001-09-07 Heizelement für einen cvd-apparat

Country Status (6)

Country Link
US (1) US6593548B2 (de)
EP (1) EP1258914B1 (de)
JP (1) JP3780364B2 (de)
AT (1) ATE346378T1 (de)
DE (1) DE60124674T2 (de)
WO (1) WO2002025712A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
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TWI245329B (en) * 2001-11-14 2005-12-11 Anelva Corp Heating element CVD device and heating element CVD method using the same
US20040045813A1 (en) * 2002-09-03 2004-03-11 Seiichiro Kanno Wafer processing apparatus, wafer stage, and wafer processing method
JP3787816B2 (ja) * 2002-10-04 2006-06-21 キヤノンアネルバ株式会社 発熱体ｃｖｄ装置
US7300890B1 (en) * 2003-07-17 2007-11-27 Midwest Research Institute Method and apparatus for forming conformal SiNx films
TW200533780A (en) * 2004-03-10 2005-10-16 Ulvac Inc Self-cleaning catalyst chemical vapor deposition device and cleaning method therefor
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7125758B2 (en) 2004-04-20 2006-10-24 Applied Materials, Inc. Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors
US20050233092A1 (en) * 2004-04-20 2005-10-20 Applied Materials, Inc. Method of controlling the uniformity of PECVD-deposited thin films
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
JP4561308B2 (ja) * 2004-10-21 2010-10-13 日立電線株式会社 発熱体ｃｖｄ装置
KR100688836B1 (ko) * 2005-05-11 2007-03-02 삼성에스디아이 주식회사 촉매 화학기상증착장치
KR100688838B1 (ko) * 2005-05-13 2007-03-02 삼성에스디아이 주식회사 촉매 화학기상증착장치 및 촉매 화학기상증착방법
US7727590B2 (en) * 2006-05-18 2010-06-01 California Institute Of Technology Robust filament assembly for a hot-wire chemical vapor deposition system
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
JP4413947B2 (ja) * 2007-06-21 2010-02-10 株式会社東芝 半導体装置の製造方法
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
EP2186921A1 (de) * 2008-11-13 2010-05-19 Echerkon Technologies Ltd. Heizdrahtanordnung zur Hitzdraht-Gasphasenabscheidung
DE102009023471B4 (de) * 2009-06-02 2012-08-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage und -verfahren
DE102009023472B4 (de) 2009-06-02 2014-10-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage und Beschichtungsverfahren
EP2580368B1 (de) * 2010-06-11 2015-11-18 Tokyo Electron Limited Vorrichtung zur steuerung einer chemischen dampfablagerung
US8709537B2 (en) * 2010-10-22 2014-04-29 Applied Materials, Inc. Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes
TWI551711B (zh) * 2010-11-24 2016-10-01 愛發科股份有限公司 薄膜形成裝置及薄膜形成裝置之清潔方法
US8662941B2 (en) 2011-05-12 2014-03-04 Applied Materials, Inc. Wire holder and terminal connector for hot wire chemical vapor deposition chamber
US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4223048A (en) * 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
US5755886A (en) * 1986-12-19 1998-05-26 Applied Materials, Inc. Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
JPH01162769A (ja) 1987-12-18 1989-06-27 Fujitsu Ltd アモルファスシリコンの形成方法
US5124179A (en) * 1990-09-13 1992-06-23 Diamonex, Incorporated Interrupted method for producing multilayered polycrystalline diamond films
EP0506391B1 (de) * 1991-03-26 2002-02-27 Ngk Insulators, Ltd. Verwendung eines Korrosion beständiger Substratshalter aus Aluminiumnitrid
JP3215591B2 (ja) 1995-02-10 2001-10-09 東京エレクトロン株式会社 ガス処理装置
JPH08115882A (ja) 1994-10-19 1996-05-07 Fuji Electric Co Ltd 非晶質半導体薄膜の成膜方法
JP3453214B2 (ja) * 1995-03-15 2003-10-06 科学技術振興事業団 触媒ｃｖｄ法による薄膜トランジスタの製造方法および薄膜トランジスタ
JP2765622B2 (ja) * 1995-08-23 1998-06-18 日本電気株式会社 選択シリコンエピタキシャル膜の成長方法
JP3737221B2 (ja) * 1996-09-06 2006-01-18 英樹 松村 薄膜作成方法及び薄膜作成装置
US6040010A (en) * 1996-09-10 2000-03-21 Micron Technology, Inc. Catalytic breakdown of reactant gases in chemical vapor deposition
JP3132489B2 (ja) * 1998-11-05 2001-02-05 日本電気株式会社 化学的気相成長装置及び薄膜成膜方法
JP2000303182A (ja) * 1999-04-16 2000-10-31 Anelva Corp 化学蒸着装置

Also Published As

Publication number Publication date
EP1258914A1 (de) 2002-11-20
US6593548B2 (en) 2003-07-15
JP3780364B2 (ja) 2006-05-31
US20020189545A1 (en) 2002-12-19
JPWO2002025712A1 (ja) 2004-01-29
EP1258914B1 (de) 2006-11-22
DE60124674T2 (de) 2007-09-13
EP1258914A4 (de) 2004-10-27
WO2002025712A1 (fr) 2002-03-28
ATE346378T1 (de) 2006-12-15

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