DE60122872D1 - Verfahren zur herstellung von einer stapelkondensator-struktur und stapelkondensator - Google Patents

Verfahren zur herstellung von einer stapelkondensator-struktur und stapelkondensator

Info

Publication number
DE60122872D1
DE60122872D1 DE60122872T DE60122872T DE60122872D1 DE 60122872 D1 DE60122872 D1 DE 60122872D1 DE 60122872 T DE60122872 T DE 60122872T DE 60122872 T DE60122872 T DE 60122872T DE 60122872 D1 DE60122872 D1 DE 60122872D1
Authority
DE
Germany
Prior art keywords
stacking
producing
condenser
stacking condenser
condenser structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60122872T
Other languages
English (en)
Other versions
DE60122872T2 (de
Inventor
Yun-Yu Wang
Rajarao Jammy
J Kimball
E Kotecki
Jenny Lian
Chenting Lin
A Miller
Nicolas Nagel
Hua Shen
S Wildman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
International Business Machines Corp
Original Assignee
Infineon Technologies AG
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG, International Business Machines Corp filed Critical Infineon Technologies AG
Publication of DE60122872D1 publication Critical patent/DE60122872D1/de
Application granted granted Critical
Publication of DE60122872T2 publication Critical patent/DE60122872T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
DE60122872T 2000-05-02 2001-05-02 Verfahren zur herstellung von einer stapelkondensator-struktur und stapelkondensator Expired - Lifetime DE60122872T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/562,556 US6339007B1 (en) 2000-05-02 2000-05-02 Capacitor stack structure and method of fabricating description
US562556 2000-05-02
PCT/US2001/014242 WO2001084607A1 (en) 2000-05-02 2001-05-02 Capacitor stack structure and method of fabricating

Publications (2)

Publication Number Publication Date
DE60122872D1 true DE60122872D1 (de) 2006-10-19
DE60122872T2 DE60122872T2 (de) 2007-04-19

Family

ID=24246760

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60122872T Expired - Lifetime DE60122872T2 (de) 2000-05-02 2001-05-02 Verfahren zur herstellung von einer stapelkondensator-struktur und stapelkondensator

Country Status (7)

Country Link
US (1) US6339007B1 (de)
EP (1) EP1279188B1 (de)
JP (1) JP3643314B2 (de)
KR (2) KR100436380B1 (de)
DE (1) DE60122872T2 (de)
TW (2) TW523912B (de)
WO (1) WO2001084607A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4150154B2 (ja) * 2000-08-21 2008-09-17 株式会社ルネサステクノロジ 半導体集積回路装置
KR20030023143A (ko) * 2001-09-12 2003-03-19 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
US6787831B2 (en) * 2002-01-15 2004-09-07 Infineon Technologies Aktiengesellschaft Barrier stack with improved barrier properties
US7042705B2 (en) * 2003-01-30 2006-05-09 Infineon Technologies Ag Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processing
KR100562499B1 (ko) * 2003-02-21 2006-03-21 삼성전자주식회사 강유전체 기억 소자 및 그 제조 방법
US6838339B2 (en) * 2003-06-05 2005-01-04 Infineon Technologies Ag Area-efficient stack capacitor
JP2006060170A (ja) * 2004-08-24 2006-03-02 Nec Electronics Corp キャパシタおよび半導体装置の製造方法
KR100681274B1 (ko) * 2004-11-25 2007-02-09 삼성전자주식회사 커패시터 및 그 제조 방법
US9908817B2 (en) 2009-06-02 2018-03-06 Uchicago Argonne, Llc Multilayer capacitors, method for making multilayer capacitors

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343062A (en) * 1992-05-29 1994-08-30 Nippon Steel Corporation Semiconductor memory having a memory cell including a capacitor with a two-layer lower electrode
US5392189A (en) * 1993-04-02 1995-02-21 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
KR0168346B1 (ko) 1994-12-29 1998-12-15 김광호 고유전율 재료를 이용한 커패시터 및 그 제조방법
JPH08316430A (ja) * 1995-05-15 1996-11-29 Mitsubishi Electric Corp 半導体メモリとその製造方法、スタックドキャパシタ
US5585998A (en) 1995-12-22 1996-12-17 International Business Machines Corporation Isolated sidewall capacitor with dual dielectric
KR100199095B1 (ko) * 1995-12-27 1999-06-15 구본준 반도체 메모리 셀의 캐패시터 구조 및 그 제조방법
US5825609A (en) 1996-04-23 1998-10-20 International Business Machines Corporation Compound electrode stack capacitor
US5843830A (en) 1996-06-26 1998-12-01 Micron Technology, Inc. Capacitor, and methods for forming a capacitor
JPH10107223A (ja) * 1996-10-02 1998-04-24 Texas Instr Japan Ltd 誘電体キャパシタ及び誘電体メモリ装置と、これらの製造方法
JP3452763B2 (ja) * 1996-12-06 2003-09-29 シャープ株式会社 半導体記憶装置および半導体記憶装置の製造方法
JPH10173149A (ja) 1996-12-13 1998-06-26 Hitachi Ltd 半導体装置およびその製造方法
KR100243285B1 (ko) 1997-02-27 2000-02-01 윤종용 고유전 커패시터 및 그 제조방법
KR100230418B1 (ko) * 1997-04-17 1999-11-15 윤종용 백금족 금속층 형성방법 및 이를 이용한 커패시터 제조방법
US5972722A (en) * 1998-04-14 1999-10-26 Texas Instruments Incorporated Adhesion promoting sacrificial etch stop layer in advanced capacitor structures

Also Published As

Publication number Publication date
KR100436380B1 (ko) 2004-06-16
EP1279188B1 (de) 2006-09-06
JP2001358229A (ja) 2001-12-26
EP1279188A1 (de) 2003-01-29
JP3643314B2 (ja) 2005-04-27
WO2001084607A1 (en) 2001-11-08
TW515029B (en) 2002-12-21
KR20020092465A (ko) 2002-12-11
KR100798509B1 (ko) 2008-01-28
DE60122872T2 (de) 2007-04-19
TW523912B (en) 2003-03-11
KR20010100921A (ko) 2001-11-14
US6339007B1 (en) 2002-01-15

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

Owner name: INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y

8364 No opposition during term of opposition