DE60121396D1 - Batteriesteuerungsschaltkreis mit Leistungs-MOSFETs und Verfahren zu seiner Herstellung - Google Patents

Batteriesteuerungsschaltkreis mit Leistungs-MOSFETs und Verfahren zu seiner Herstellung

Info

Publication number
DE60121396D1
DE60121396D1 DE60121396T DE60121396T DE60121396D1 DE 60121396 D1 DE60121396 D1 DE 60121396D1 DE 60121396 T DE60121396 T DE 60121396T DE 60121396 T DE60121396 T DE 60121396T DE 60121396 D1 DE60121396 D1 DE 60121396D1
Authority
DE
Germany
Prior art keywords
making
control circuit
same
battery control
power mosfets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60121396T
Other languages
English (en)
Other versions
DE60121396T2 (de
Inventor
Noriaki Sakamoto
Yoshiyuki Kobayashi
Hirokazu Fukuda
Hiroki Etou
Kouji Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of DE60121396D1 publication Critical patent/DE60121396D1/de
Application granted granted Critical
Publication of DE60121396T2 publication Critical patent/DE60121396T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/14—Integrated circuits
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/181—Encapsulation
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Fuses (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE60121396T 2000-09-04 2001-03-20 Batteriesteuerungsschaltkreis mit Leistungs-MOSFETs und Verfahren zu seiner Herstellung Expired - Lifetime DE60121396T2 (de)

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JP2000266709A JP3650008B2 (ja) 2000-09-04 2000-09-04 Ｍｏｓｆｅｔを用いた保護回路装置およびその製造方法
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US20150132614A1 (en) * 2013-11-12 2015-05-14 Infineon Technologies Ag Sensor arrangement, energy system and method
US9614256B2 (en) * 2014-03-31 2017-04-04 Infineon Technologies Ag Lithium ion battery, integrated circuit and method of manufacturing a lithium ion battery
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WO2016203764A1 (ja) * 2015-06-17 2016-12-22 パナソニックＩｐマネジメント株式会社 半導体装置及びモジュール部品
JP2017130527A (ja) * 2016-01-19 2017-07-27 力祥半導體股▲フン▼有限公司ＵＢＩＱ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｃｏｒｐ． 半導体装置
JP7135636B2 (ja) * 2018-09-14 2022-09-13 富士電機株式会社 半導体装置
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KR100366173B1 (ko) 2002-12-31
KR20020018930A (ko) 2002-03-09
EP1184900A2 (de) 2002-03-06
DE60121396T2 (de) 2007-07-05
US20050029588A1 (en) 2005-02-10
JP3650008B2 (ja) 2005-05-18
US7211868B2 (en) 2007-05-01
EP1184900A3 (de) 2004-01-21
US20020053744A1 (en) 2002-05-09
JP2002076340A (ja) 2002-03-15
CN1199531C (zh) 2005-04-27
EP1184900B1 (de) 2006-07-12
TW486923B (en) 2002-05-11

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