DE60101209D1 - Verfahren und Vorrichtung zur sequentiellen Plasmabehandlung - Google Patents

Verfahren und Vorrichtung zur sequentiellen Plasmabehandlung

Info

Publication number
DE60101209D1
DE60101209D1 DE60101209T DE60101209T DE60101209D1 DE 60101209 D1 DE60101209 D1 DE 60101209D1 DE 60101209 T DE60101209 T DE 60101209T DE 60101209 T DE60101209 T DE 60101209T DE 60101209 D1 DE60101209 D1 DE 60101209D1
Authority
DE
Germany
Prior art keywords
plasma treatment
ionisation energy
substrate
energy sources
sources
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60101209T
Other languages
English (en)
Other versions
DE60101209T2 (de
Inventor
Pascal Colpo
Francois Rossi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
European Union Brussels Be
Original Assignee
EUROPEAN COMMUNITY BRUESSEL/ BRUXELLES
EUROP COMMUNITY BRUESSEL BRUXE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EUROPEAN COMMUNITY BRUESSEL/ BRUXELLES, EUROP COMMUNITY BRUESSEL BRUXE filed Critical EUROPEAN COMMUNITY BRUESSEL/ BRUXELLES
Publication of DE60101209D1 publication Critical patent/DE60101209D1/de
Application granted granted Critical
Publication of DE60101209T2 publication Critical patent/DE60101209T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32394Treating interior parts of workpieces
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Radiation-Therapy Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
DE60101209T 2001-04-27 2001-04-27 Verfahren und Vorrichtung zur sequentiellen Plasmabehandlung Expired - Lifetime DE60101209T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01401101A EP1253216B1 (de) 2001-04-27 2001-04-27 Verfahren und Vorrichtung zur sequentiellen Plasmabehandlung

Publications (2)

Publication Number Publication Date
DE60101209D1 true DE60101209D1 (de) 2003-12-18
DE60101209T2 DE60101209T2 (de) 2004-09-02

Family

ID=8182707

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60101209T Expired - Lifetime DE60101209T2 (de) 2001-04-27 2001-04-27 Verfahren und Vorrichtung zur sequentiellen Plasmabehandlung

Country Status (13)

Country Link
US (1) US7618686B2 (de)
EP (1) EP1253216B1 (de)
JP (1) JP2004533316A (de)
KR (1) KR20040007516A (de)
AT (1) ATE254192T1 (de)
CA (1) CA2444766C (de)
DE (1) DE60101209T2 (de)
DK (1) DK1253216T3 (de)
ES (1) ES2208530T3 (de)
NO (1) NO20034750L (de)
PT (1) PT1253216E (de)
TW (1) TW593464B (de)
WO (1) WO2002088420A1 (de)

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US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
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WO2014085346A1 (en) 2012-11-30 2014-06-05 Sio2 Medical Products, Inc. Hollow body with inside coating
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CN103060778B (zh) * 2013-01-23 2015-03-11 深圳市劲拓自动化设备股份有限公司 平板式pecvd装置
EP2961858B1 (de) 2013-03-01 2022-09-07 Si02 Medical Products, Inc. Beschichtete spritze.
US10060851B2 (en) 2013-03-05 2018-08-28 Plexense, Inc. Surface plasmon detection apparatuses and methods
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
CA2904611C (en) 2013-03-11 2021-11-23 Sio2 Medical Products, Inc. Coated packaging
EP2971227B1 (de) 2013-03-15 2017-11-15 Si02 Medical Products, Inc. Beschichtungsverfahren.
KR101592241B1 (ko) 2013-04-15 2016-02-05 (주)플렉센스 나노 입자 어레이의 제조 방법, 표면 플라즈몬 공명 기반의 센서, 및 이를 이용한 분석 방법
US11066745B2 (en) 2014-03-28 2021-07-20 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
EP3233303A4 (de) * 2014-12-15 2018-08-22 Plexense, Inc. Oberflächenplasmonendetektionvorrichtungen und -verfahren
CA2995225C (en) 2015-08-18 2023-08-29 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
WO2017189234A1 (en) * 2016-04-29 2017-11-02 Retro-Semi Technologies, Llc Vhf z-coil plasma source
US10510575B2 (en) * 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11984306B2 (en) 2021-06-09 2024-05-14 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

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Also Published As

Publication number Publication date
CA2444766C (en) 2009-07-14
CA2444766A1 (en) 2002-11-07
KR20040007516A (ko) 2004-01-24
EP1253216B1 (de) 2003-11-12
US20040154541A1 (en) 2004-08-12
ES2208530T3 (es) 2004-06-16
WO2002088420A1 (en) 2002-11-07
NO20034750D0 (no) 2003-10-23
PT1253216E (pt) 2004-04-30
ATE254192T1 (de) 2003-11-15
DK1253216T3 (da) 2004-03-22
NO20034750L (no) 2003-12-22
EP1253216A1 (de) 2002-10-30
DE60101209T2 (de) 2004-09-02
TW593464B (en) 2004-06-21
US7618686B2 (en) 2009-11-17
JP2004533316A (ja) 2004-11-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KROHER, STROBEL RECHTS- UND PATENTANWAELTE, 80336

8327 Change in the person/name/address of the patent owner

Owner name: EUROPEAN UNION, BRUSSELS, BE

8328 Change in the person/name/address of the agent

Representative=s name: DR. SCHOEN & PARTNER, 80336 MUENCHEN