DE60035586T2 - Empfindlichkeiterhöhung eines bildsensors mittels fluoreszierenden phosphor - Google Patents
Empfindlichkeiterhöhung eines bildsensors mittels fluoreszierenden phosphor Download PDFInfo
- Publication number
- DE60035586T2 DE60035586T2 DE60035586T DE60035586T DE60035586T2 DE 60035586 T2 DE60035586 T2 DE 60035586T2 DE 60035586 T DE60035586 T DE 60035586T DE 60035586 T DE60035586 T DE 60035586T DE 60035586 T2 DE60035586 T2 DE 60035586T2
- Authority
- DE
- Germany
- Prior art keywords
- image sensor
- wavelength
- phosphor layer
- pixel matrix
- photons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 49
- 229910052698 phosphorus Inorganic materials 0.000 title 1
- 239000011574 phosphorus Substances 0.000 title 1
- 230000035945 sensitivity Effects 0.000 title 1
- 239000011159 matrix material Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 10
- 206010034972 Photosensitivity reaction Diseases 0.000 description 8
- 230000036211 photosensitivity Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000695 excitation spectrum Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000009849 deactivation Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000002329 infrared spectrum Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 235000011449 Rosa Nutrition 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/325,005 US6597398B1 (en) | 1999-06-02 | 1999-06-02 | Image sensor response enhancement using fluorescent phosphors |
| US325005 | 1999-06-02 | ||
| PCT/US2000/013718 WO2000074140A1 (en) | 1999-06-02 | 2000-05-17 | Image sensor response enhancement using fluorescent phosphors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60035586D1 DE60035586D1 (de) | 2007-08-30 |
| DE60035586T2 true DE60035586T2 (de) | 2008-04-17 |
Family
ID=23266043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60035586T Expired - Fee Related DE60035586T2 (de) | 1999-06-02 | 2000-05-17 | Empfindlichkeiterhöhung eines bildsensors mittels fluoreszierenden phosphor |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6597398B1 (https=) |
| EP (1) | EP1183733B1 (https=) |
| JP (1) | JP4426139B2 (https=) |
| KR (1) | KR20020059254A (https=) |
| AU (1) | AU4857200A (https=) |
| CA (1) | CA2373595C (https=) |
| DE (1) | DE60035586T2 (https=) |
| TW (1) | TW492256B (https=) |
| WO (1) | WO2000074140A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE261640T1 (de) * | 2000-10-13 | 2004-03-15 | Applied Scintillation Technolo | Infrarotkamera mit phosphorbeschichteten ccd |
| US7139028B2 (en) * | 2000-10-17 | 2006-11-21 | Canon Kabushiki Kaisha | Image pickup apparatus |
| TWI229539B (en) * | 2003-02-27 | 2005-03-11 | Elecvision Inc | Small image sensing device and image sensing element thereof |
| US7277602B1 (en) * | 2003-03-17 | 2007-10-02 | Biomorphic Vlsi, Inc. | Method and system for pixel bus signaling in CMOS image sensors |
| JP4950541B2 (ja) * | 2006-04-05 | 2012-06-13 | キヤノン株式会社 | 固体撮像素子 |
| US7541596B2 (en) | 2006-07-05 | 2009-06-02 | Omnivision Technologies, Inc. | Method and apparatus for increasing light absorption in an image sensor using energy conversion layer |
| US20080074505A1 (en) * | 2006-07-26 | 2008-03-27 | Intematix Corporation | Phosphors for enhancing sensor responsivity in short wavelength regions of the visible spectrum |
| US7830434B2 (en) * | 2006-08-16 | 2010-11-09 | Intematix Corporation | Semiconductor color image sensor responsive at shorter wavelengths |
| TW200915551A (en) * | 2007-05-10 | 2009-04-01 | Koninkl Philips Electronics Nv | Spectrum detector and manufacturing method therefore |
| DE102007053307A1 (de) * | 2007-11-08 | 2009-05-14 | Robert Bosch Gmbh | Kamera zur Erfassung eines Fahrzeugumfeldes |
| WO2010101629A1 (en) * | 2009-03-01 | 2010-09-10 | Tau Science Corporation | High speed quantum efficiency measurement apparatus utilizing solid state lightsource |
| KR101686079B1 (ko) * | 2010-12-27 | 2016-12-13 | 삼성전자주식회사 | 깊이 영상 생성 장치 및 방법 |
| US9635325B2 (en) * | 2015-05-29 | 2017-04-25 | Semiconductor Components Industries, Llc | Systems and methods for detecting ultraviolet light using image sensors |
| EP3270125A1 (en) * | 2016-07-12 | 2018-01-17 | ams AG | Optical sensor, spectrometer and method for a spectrometer |
| US11061119B2 (en) * | 2018-10-10 | 2021-07-13 | Sensors Unlimited, Inc. | Pixels for time of flight (TOF) imaging |
| US12142622B2 (en) * | 2020-08-17 | 2024-11-12 | Au Optronics Corporation | Sensing device |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4603259A (en) * | 1983-04-08 | 1986-07-29 | General Electric Company | X-ray image converter devices using rare earth oxyhalide phosphors |
| JPH02276996A (ja) * | 1989-04-18 | 1990-11-13 | Seiko Instr Inc | Ｘ線イメージセンサー |
| JPH04322467A (ja) | 1991-04-22 | 1992-11-12 | Olympus Optical Co Ltd | 固体撮像装置 |
| JPH04326763A (ja) | 1991-04-26 | 1992-11-16 | Olympus Optical Co Ltd | 固体撮像装置 |
| JPH06205768A (ja) * | 1992-08-18 | 1994-07-26 | Philips Electron Nv | Ｘ線検査装置 |
| EP1209508B1 (en) * | 1993-12-01 | 2004-10-27 | Sharp Kabushiki Kaisha | Display for 3D images |
| US5631704A (en) * | 1994-10-14 | 1997-05-20 | Lucent Technologies, Inc. | Active pixel sensor and imaging system having differential mode |
| EP0878007B1 (en) | 1996-01-22 | 2005-05-11 | California Institute Of Technology | Active pixel sensor array with electronic shuttering |
| US5990506A (en) * | 1996-03-20 | 1999-11-23 | California Institute Of Technology | Active pixel sensors with substantially planarized color filtering elements |
| JP3003597B2 (ja) * | 1996-11-18 | 2000-01-31 | 日本電気株式会社 | 固体撮像素子 |
| JPH10149776A (ja) * | 1996-11-18 | 1998-06-02 | Kasei Optonix Co Ltd | プラズマディスプレイ用蛍光膜 |
| US5976411A (en) * | 1997-12-16 | 1999-11-02 | M.A. Hannacolor | Laser marking of phosphorescent plastic articles |
| US6208393B1 (en) * | 1998-09-30 | 2001-03-27 | Intel Corporation | Liquid crystal color filter with integrated infrared blocking |
-
1999
- 1999-06-02 US US09/325,005 patent/US6597398B1/en not_active Expired - Lifetime
-
2000
- 2000-05-17 DE DE60035586T patent/DE60035586T2/de not_active Expired - Fee Related
- 2000-05-17 JP JP2001500338A patent/JP4426139B2/ja not_active Expired - Fee Related
- 2000-05-17 AU AU48572/00A patent/AU4857200A/en not_active Abandoned
- 2000-05-17 CA CA002373595A patent/CA2373595C/en not_active Expired - Fee Related
- 2000-05-17 EP EP00930815A patent/EP1183733B1/en not_active Expired - Lifetime
- 2000-05-17 KR KR1020017015271A patent/KR20020059254A/ko not_active Ceased
- 2000-05-17 WO PCT/US2000/013718 patent/WO2000074140A1/en not_active Ceased
- 2000-05-25 TW TW089110141A patent/TW492256B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW492256B (en) | 2002-06-21 |
| JP2003529955A (ja) | 2003-10-07 |
| CA2373595A1 (en) | 2000-12-07 |
| EP1183733B1 (en) | 2007-07-18 |
| EP1183733A1 (en) | 2002-03-06 |
| US6597398B1 (en) | 2003-07-22 |
| AU4857200A (en) | 2000-12-18 |
| US20030133029A1 (en) | 2003-07-17 |
| KR20020059254A (ko) | 2002-07-12 |
| CA2373595C (en) | 2006-01-10 |
| JP4426139B2 (ja) | 2010-03-03 |
| WO2000074140A1 (en) | 2000-12-07 |
| DE60035586D1 (de) | 2007-08-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Representative=s name: HEYER, V., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 806 |
|
| 8339 | Ceased/non-payment of the annual fee |