CA2373595C - Image sensor response enhancement using fluorescent phosphors - Google Patents

Image sensor response enhancement using fluorescent phosphors Download PDF

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Publication number
CA2373595C
CA2373595C CA002373595A CA2373595A CA2373595C CA 2373595 C CA2373595 C CA 2373595C CA 002373595 A CA002373595 A CA 002373595A CA 2373595 A CA2373595 A CA 2373595A CA 2373595 C CA2373595 C CA 2373595C
Authority
CA
Canada
Prior art keywords
image sensor
phosphor layer
wavelength
pixel array
photons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002373595A
Other languages
English (en)
French (fr)
Other versions
CA2373595A1 (en
Inventor
Lawrence A. Booth, Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of CA2373595A1 publication Critical patent/CA2373595A1/en
Application granted granted Critical
Publication of CA2373595C publication Critical patent/CA2373595C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
CA002373595A 1999-06-02 2000-05-17 Image sensor response enhancement using fluorescent phosphors Expired - Fee Related CA2373595C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/325,005 1999-06-02
US09/325,005 US6597398B1 (en) 1999-06-02 1999-06-02 Image sensor response enhancement using fluorescent phosphors
PCT/US2000/013718 WO2000074140A1 (en) 1999-06-02 2000-05-17 Image sensor response enhancement using fluorescent phosphors

Publications (2)

Publication Number Publication Date
CA2373595A1 CA2373595A1 (en) 2000-12-07
CA2373595C true CA2373595C (en) 2006-01-10

Family

ID=23266043

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002373595A Expired - Fee Related CA2373595C (en) 1999-06-02 2000-05-17 Image sensor response enhancement using fluorescent phosphors

Country Status (9)

Country Link
US (1) US6597398B1 (https=)
EP (1) EP1183733B1 (https=)
JP (1) JP4426139B2 (https=)
KR (1) KR20020059254A (https=)
AU (1) AU4857200A (https=)
CA (1) CA2373595C (https=)
DE (1) DE60035586T2 (https=)
TW (1) TW492256B (https=)
WO (1) WO2000074140A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1199886B1 (en) * 2000-10-13 2004-03-10 Applied Scintillation Technologies Ltd. Infrared camera with phosphor coated CCD
US7139028B2 (en) * 2000-10-17 2006-11-21 Canon Kabushiki Kaisha Image pickup apparatus
TWI229539B (en) * 2003-02-27 2005-03-11 Elecvision Inc Small image sensing device and image sensing element thereof
US7277602B1 (en) * 2003-03-17 2007-10-02 Biomorphic Vlsi, Inc. Method and system for pixel bus signaling in CMOS image sensors
JP4950541B2 (ja) * 2006-04-05 2012-06-13 キヤノン株式会社 固体撮像素子
US7541596B2 (en) 2006-07-05 2009-06-02 Omnivision Technologies, Inc. Method and apparatus for increasing light absorption in an image sensor using energy conversion layer
US20080074505A1 (en) * 2006-07-26 2008-03-27 Intematix Corporation Phosphors for enhancing sensor responsivity in short wavelength regions of the visible spectrum
US7830434B2 (en) * 2006-08-16 2010-11-09 Intematix Corporation Semiconductor color image sensor responsive at shorter wavelengths
TW200915551A (en) * 2007-05-10 2009-04-01 Koninkl Philips Electronics Nv Spectrum detector and manufacturing method therefore
DE102007053307A1 (de) * 2007-11-08 2009-05-14 Robert Bosch Gmbh Kamera zur Erfassung eines Fahrzeugumfeldes
KR20110124354A (ko) * 2009-03-01 2011-11-16 타우 사이언스 코포레이션 고체 상태 광원을 활용하는 고속 양자 효율 측정 장치
KR101686079B1 (ko) * 2010-12-27 2016-12-13 삼성전자주식회사 깊이 영상 생성 장치 및 방법
US9635325B2 (en) * 2015-05-29 2017-04-25 Semiconductor Components Industries, Llc Systems and methods for detecting ultraviolet light using image sensors
EP3270125A1 (en) * 2016-07-12 2018-01-17 ams AG Optical sensor, spectrometer and method for a spectrometer
US11061119B2 (en) * 2018-10-10 2021-07-13 Sensors Unlimited, Inc. Pixels for time of flight (TOF) imaging
US12142622B2 (en) * 2020-08-17 2024-11-12 Au Optronics Corporation Sensing device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4603259A (en) * 1983-04-08 1986-07-29 General Electric Company X-ray image converter devices using rare earth oxyhalide phosphors
JPH02276996A (ja) * 1989-04-18 1990-11-13 Seiko Instr Inc X線イメージセンサー
JPH04322467A (ja) 1991-04-22 1992-11-12 Olympus Optical Co Ltd 固体撮像装置
JPH04326763A (ja) 1991-04-26 1992-11-16 Olympus Optical Co Ltd 固体撮像装置
JPH06205768A (ja) * 1992-08-18 1994-07-26 Philips Electron Nv X線検査装置
DE69432283T2 (de) * 1993-12-01 2004-01-22 Sharp K.K. Display für dreidimensionale Bilder
US5631704A (en) * 1994-10-14 1997-05-20 Lucent Technologies, Inc. Active pixel sensor and imaging system having differential mode
EP0878007B1 (en) 1996-01-22 2005-05-11 California Institute Of Technology Active pixel sensor array with electronic shuttering
US5990506A (en) * 1996-03-20 1999-11-23 California Institute Of Technology Active pixel sensors with substantially planarized color filtering elements
JPH10149776A (ja) * 1996-11-18 1998-06-02 Kasei Optonix Co Ltd プラズマディスプレイ用蛍光膜
JP3003597B2 (ja) 1996-11-18 2000-01-31 日本電気株式会社 固体撮像素子
US5976411A (en) * 1997-12-16 1999-11-02 M.A. Hannacolor Laser marking of phosphorescent plastic articles
US6208393B1 (en) * 1998-09-30 2001-03-27 Intel Corporation Liquid crystal color filter with integrated infrared blocking

Also Published As

Publication number Publication date
AU4857200A (en) 2000-12-18
CA2373595A1 (en) 2000-12-07
DE60035586D1 (de) 2007-08-30
EP1183733A1 (en) 2002-03-06
KR20020059254A (ko) 2002-07-12
US6597398B1 (en) 2003-07-22
JP2003529955A (ja) 2003-10-07
EP1183733B1 (en) 2007-07-18
WO2000074140A1 (en) 2000-12-07
TW492256B (en) 2002-06-21
DE60035586T2 (de) 2008-04-17
JP4426139B2 (ja) 2010-03-03
US20030133029A1 (en) 2003-07-17

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